FUNDAMENTAL LIMITATIONS OF THE CONTROLLED AVALANCHE TRANSIT TIME TRANSISTOR (CATT)CROSNIER Y; GERARD H; LEFEBVRE M et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 731-737; BIBL. 10 REF.Article

ETUDE EXPERIMENTALE DU TRANSISTOR A AVALANCHE CONTROLEE ET TEMPS DE TRANSIT - C.A.T.T. - MISE EN EVIDENCE DES MECANISMES FONDAMENTAUXGERARD HENRI.1979; ; FRA; DA. 1979; (7)-84 P.-PL.; 30 CM; BIBL. 14 REF.; TH. 3E CYCLE: SCI./LILLE 1/1979Thesis

THE INFLUENCE OF ETCH PROCEDURE ON THE STABILITY OF TRANSIT-TIME DEVICES.DE COGAN D.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 12; PP. 1918-1919; BIBL. 1 REF.Article

ION-IMPLANTED PLANAR-MESA IMPATT DIODES FOR MILLIMETER WAVELENGTHSLEE DH; WELLER KP; THROWER WF et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 714-722; BIBL. 16 REF.Article

THE CURRENT-VOLTAGE CHARACTERISTICS OF THE REACH-THROUGH BARITT DIODE WITH DOUBLE DRIFT LAYER STRUCTURE.SWEI YAM YU.1977; J. NATION. CHIAO TUNG UNIV.; TAIWAN; DA. 1977-09; VOL. 3; PP. 43-48; BIBL. 4 REF.Article

SEPARATEUR DE MASSES A TEMPS DE TRANSIT BASE SUR UN MIROIR ELECTROSTATIQUE CYLINDRIQUEZASHKVARA VV; IL'IN AM; ASHIMBAEVA BU et al.1980; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1980; VOL. 50; NO 7; PP. 1464-1470; BIBL. 5 REF.Article

CARRIER TRANSPORT IN THE DRIFT REGION OF READ-TYPE DIODESKUVAS RL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 660-666; BIBL. 15 REF.Article

A STUDY OF FAILURE MECHANISMS IN SILICON IMPATT DIODESSELLBERG F; WEISSGLAS P; ANDERSSON G et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 742-746; BIBL. 15 REF.Article

ON AN EXPERIMENTAL AND THEORETICAL DETERMINATION OF TUNNEL CURRENT WHICH SETS OFF THE AVALANCHE IN HIGH-EFFICIENCY IMPATT DIODES.KENNIS P; CHIVE M; CONSTANT E et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 753-755; BIBL. 9 REF.Article

INFLUENCE OF DIFFUSION ON THE SMALL-SIGNAL PROPERTIES OF MISAWA DIODES.SCHAWARZ R; THIM HW; POETZL HW et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 288-289; BIBL. 7 REF.Article

MIXED TUNNELING AND AVALANCHE MECHANISMS IN P-N JUNCTIONS AND THEIR EFFECTS ON MICROWAVE TRANSIT-TIME DEVICESELTA ME; HADDAD GI.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 694-702; BIBL. 25 REF.Article

THE COMPARATIVE CHARACTERISTICS OF THE OPERATING CONDITIONS OF RETARDING-FIELD SINGLE-TRANSIT OSCILLATORS FROM THE VIEW-POINT OF THE POSSIBILITY OF THEIR MICROMINIATURIZATION, REDUCING THE SUPPLY VOLTAGES AND INCREASING THE EFFICIENCY.AFANASOV SG; ASHBEL I YA; PETROV SG et al.1976; RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1976; VOL. 21; NO 9; PP. 70-76; ABS. FR.; BIBL. 17 REF.Article

ANALYTIC MODELING OF TRANSIT-TIME DEVICE DRIFT REGIONS WITH FIELD-DEPENDENT TRANSPORT COEFFICIENTSMCCLEER PJ; SNYDER DE; GRONDIN RO et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 37-48; BIBL. 29 REF.Article

MODES OF AVALANCHE OSCILLATIONS IN SILICON DIODESWARD AL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 683-687; BIBL. 19 REF.Article

EFFECT OF JUNCTION INHOMOGENEITY ON AC VOLTAGE OF N⁺ PP⁺ GAAS IMPATT DIODES.VIJENDER SHARMA; MATHUR PC.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 1; PP. K59-K61; BIBL. 6 REF.Article

TRANSIENT TEMPERATURE PROFILES WITHIN THE ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATT/SAMOSS JW; ELFE TB.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 9; PP. 1160-1166; BIBL. 17 REF.Article

TRAPATTS AND IMPATTS. STATE OF THE ART AND APPLICATIONS.COHEN ED.1977; MICROWAVE J.; U.S.A.; DA. 1977; VOL. 20; NO 2; PP. 22-56 (6P.); BIBL. 58 REF.Article

AMPLIFICATION EN ONDES MILLIMETRIQUES A L'AIDE DE DIODES ATT A ASGAMATHIEU JR.1978; ; FRA; DA. 1978; DGRST 77 7 1022; (4)-22 P.; 30 CM; ACTION CONCERT.: COMPOS. CIRCUITS MICROMINIAT.Report

A LUMPED-DISTRIBUTED SMALL-SIGNAL MODEL FOR A CLASS OF TRANSIT-TIME SEMICONDUCTOR DEVICES.NGUYEN QUANGA.1976; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1976; VOL. 4; NO 4; PP. 357-370; BIBL. 27 REF.Article

Fundamental performance limitations of transit-time devices: a zeroth-order analysisYEN-CHU WANG.International journal of electronics. 1985, Vol 58, Num 6, pp 1037-1040, issn 0020-7217Article

A new process of grid structure formation for end point detection during substrate thinning of transit time devicesAHMAD, S; AKHTAR, J; MUSTAFA, M et al.Microelectronics and reliability. 1985, Vol 25, Num 3, pp 447-450, issn 0026-2714Article

ETUDE DES PROPRIETES DYNAMIQUES ET DES DIVERSES APPLICATIONS HYPERFREQUENCES DE LA DIODE A INJECTION THERMOIONIQUE ET TEMPS DE TRANSITVANOVERSCHELDE ANDRE.1980; ; FRA; DA. 1980; 196 P.-PL.; 30 CM; BIBL. 7 P.; TH.: SCI. PHYS./LILLE 1/1980/501Thesis

HIGH-FREQUENCY LIMITATIONS OF IMPATT, MITATT, AND TUNNETT MODE DEVICESELTA ME; HADDAD GI.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 442-449; BIBL. 26 REF.Article

LARGE-SIGNAL PERFORMANCE OF MICROWAVE TRANSIT-TIME DEVICES IN MIXED TUNNELING AND AVALANCHE BREAKDOWNELTA ME; HADDAD GI.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 941-948; BIBL. 15 REF.Article

ETUDE D'HETEROJONCTIONS GERMANIUM SUR ARSENIURE DE GALLIUM ISOTYPES N SUR N ET DE LEURS APPLICATIONS AUX HYPERFREQUENCES.LESCROEL M.1978; ; S.L.; DA. 1978; PP. 1-75; BIBL. 1 P.; (THESE DOCT. 3E CYCLE, SPEC. PHYS. MENTION ELECTRON. INSTRUM. METROL.; PIERRE ET MARIE CURIE)Thesis