INTERVALLEY TRANSITIONS IN INVERSION LAYERS.DOHLER GH.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 903-907; BIBL. 12 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

INTERVALLEY TRANSFERS OF HOT ELECTRONS IN SILICON BELOW 77 K.NOUGIER JP; ROLLAND M; GASQUET D et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 4; PP. 314-316; BIBL. 8 REF.Article

TRANSITION ENTRE DIFFERENTES VALLEES DANS LES SEMICONDUCTEURSMATULENIS A YU; POZHELA YU K; YUTSENE V YU et al.1974; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1974; VOL. 14; NO 6; PP. 907-917; ABS. LITU. ANGL.; BIBL. 8 REF.Article

A THEORY FOR INTERVALLEY TRANSFER EFFECT IN TWO-VALLEY SEMICONDUCTORS.TOYABE T; KODERA H.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1404-1413; BIBL. 18 REF.Article

VALLEY-ORBIT INTERACTION AND EFFECTIVE-MASS THEORY FOR INDIRECT GAP SEMICONDUCTORS.HERBERT DC; INKSON J.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 24; PP. L695-L698; BIBL. 10 REF.Article

TRANSIENT TRANSPORT AND TRANSFERRED ELECTRON BEHAVIOR IN GALLIUM ARSENIDE UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTIONIAFRATE GJ; MALIK RJ; TANG JY et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 3; PP. 255-258; BIBL. 8 REF.Article

VIOLATION OF SELECTION RULES FOR PHONON-INDUCED INTERVALLEY TRANSITIONS IN SILICON.WALLACE PR; JOOS B.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 2; PP. 303-313; BIBL. 13 REF.Article

"NEUTRALITY" QUESTION OF IMPURITIES WITHIN ELECTRON-HOLE LIQUID IN SEMICONDUCTORSOTSUKA E.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 48; NO 6; PP. 2163-2164; BIBL. 14 REF.Article

Contribution à l'étude de phénomènes de transport électroniques dans l'arseniure de gallium de type nGontrand, Christian; Nougier, Jean-Pierre.1987, 151 p.Thesis

Hot-electron recombination at neutral acceptors in GaAs: a cw probe of femtosecond intervalley scatteringULBRICH, R. G; KASH, J. A; TSANG, J. C et al.Physical review letters. 1989, Vol 62, Num 8, pp 949-952, issn 0031-9007Article

Effet Gunn de conductivité différentielle négative submillimétrique en champs E⊥HDZAMUKASHVILI, G.EH; KACHLISHVILI, Z.S.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1101-1104, issn 0015-3222Article

Evidence of hot-electron transfer into an upper valley in GaAsHEIBLUM, M; CALLEJA, E; ANDERSON, I. M et al.Physical review letters. 1986, Vol 56, Num 26, pp 2854-2857, issn 0031-9007Article