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kw.\*:("TRANSITION LAYER")

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Results 1 to 25 of 786

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ELEMENT SEPARATION IN A PLASMA-GAS TRANSITION LAYERNOCENTINI A; ENGELMANN F.1981; ASTROPHYS. SPACE SCI.; ISSN 0004-640X; NLD; DA. 1981; VOL. 76; NO 2; PP. 371-383; BIBL. 10 REF.Article

COUCHE DE TRANSITION DE LA PHOSTOSPHERE A LA CHROMOSPHERE PRES D'ERUPTIONS SOLAIRESDUBOV EH E.1981; ASTR. ZH.; ISSN 0004-6299; SUN; DA. 1981; VOL. 58; NO 4; PP. 904-906; ABS. ENG; BIBL. 6 REF.Article

JONCTION SANS DISLOCATIONS DE DEUX CRISTAUXGUBANOV AI.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 9; PP. 2724-2728; BIBL. 9 REF.Article

THICKNESS EVALUATION OF SI/SIO2 INTERFACES BY HE-BACKSCATTERING EXPERIMENTS.OFFERMANN P.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1890-1894; BIBL. 26 REF.Article

TRANSITION REGIONS IN EPITAXIAL FILMS.ALEKSANDROV LN.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 1; PP. 11-43; BIBL. 3 P.Article

EFFET DES DIMENSIONS DES COUCHES DE TRANSITION SUR LA REFLEXION DES ONDES SUR DES FRONTIERES MOBILESSTOLYAROV SN.1978; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOFIZ.; SUN; DA. 1978; VOL. 21; NO 2; PP. 174-180; ABS. ENG; BIBL. 20 REF.Article

COMMENTS ON "TRANSITION LAYER ON THE SURFACE OF ICE" BY D. BEAGLEHOLE AND D. NASONFLETCHER NH.1982; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1982; VOL. 115; NO 2; PP. L103-L104; BIBL. 9 REF.Article

ZERO-BIAS CONDUCTANCE DIP AND PHONON FEATURES IN THE SUPERCONDUCTOR DENSITY OF STATES OBSERVED ON TANTALUM- AND NIOBIUM-BASED TUMELING JUNCTIONSHAHN A; EKRUT H; WESTPHAL M et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 1; PP. 138-147; BIBL. 26 REF.Article

TRANSITION LAYERS BETWEEN VO2 FILMS AND OXIDE SUBSTRATESREMKE RL; WALSER RM; RENE RW et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 61; NO 1; PP. 72-82; BIBL. 16 REF.Article

INFLUENCE DE COUCHES METALLIQUES EN ILOTS SUR LES PROCESSUS DE CRISTALLISATION DES COUCHES COMPACTESOBUKHOV VE; TOCHITSKIJ EH I; ZHEREBILO NK et al.1979; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1979; VOL. 24; NO 5; PP. 1023-1027; H.T. 1; BIBL. 12 REF.Article

LOW ENERGY AND HIGH DOSE PHOSPHORUS ION IMPLANTATION INTO SILICON THROUGH SIO2 FILM.NATSUAKI N; TAMURA M; TOKUYAMA T et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 10; PP. 2427-2432; BIBL. 13 REF.Article

TRANSPORT ANORMAL DES ELECTRONS DANS LA COUCHE DE TRANSITION D'UN PIEGE MAGNETO-ELECTROSTATIQUEPASTUKHOV VP.1980; FIZ PLAZMY; ISSN 0367-2921; SUN; DA. 1980; VOL. 6; NO 5; PP. 1003-1011; BIBL. 11 REF.Article

THE IDENTIFICATION OF KEY VARIABLES IN THE SOLID PHASE EPITAXIAL GROWTH OF SILICONOTTAVIANI G; MAJNI G.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6865-6869; BIBL. 12 REF.Article

COMPOSITION CHIMIQUE DE L'INTERFACE DANS LES STRUCTURES HETEROGENES ZNTE-SINIKONOVA RV; MURAV'EVA KK; KALINKIN IP et al.1979; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1979; VOL. 52; NO 11; PP. 2441-2446; BIBL. 11 REF.Article

ETUDE DU PROCESSUS DE FORMATION D'UNE COUCHE DE TRANSITION DANS LE SYSTEME ZNSE-GEMURAV'EVA KK; IVANOV VA.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 12; PP. 2122-2126; BIBL. 7 REF.Article

TRANSITION REGION BEHAVIOR IN ABRUPT, FORWARD-BIASED PN-JUNCTIONS.GUCKEL H; THOMAS DC; IYENGAR SV et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 647-652; BIBL. 10 REF.Article

A CALCULATION OF THE ENERGY OF MISFIT DISLOCATIONS AND THE CRITICAL THICKNESS IN GRADED EPITAXIAL LAYERS.BALL CAB; LAIRD C.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 41; NO 3; PP. 307-314; BIBL. 17 REF.Article

HIGH TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF R.F. SPUTTERED AMORPHOUS SI THIN FILMS.GREENE JE; MEI L.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 3; PP. 429-440; BIBL. 11 REF.Article

PROFILE MODIFICATION BY LIGHT PRESSURE IN PLASMAS EXPANDING WITH UNIFORM, TIME-DEPENDENT TEMPERATURESANMARTIN JR; MONTANES JL.1980; PHYS. FLUIDS; ISSN 0031-9171; USA; DA. 1980; VOL. 23; NO 12; PP. 2413-2416; BIBL. 16 REF.Article

CONSIDERATION DE LA COUCHE DE TRANSITION DANS LA METHODE DE REFLEXION TOTALE INTERNE PERTURBEEGUSEV SS; STAS'KOV NI; FILIPPOV VV et al.1980; OPT. I SPEKTROSK.; SUN; DA. 1980; VOL. 49; NO 1; PP. 117-121; BIBL. 8 REF.Article

THE IMPLOSION OF D-T THROUGH A NONHOMOGENEOUS TRANSITION LAYER IN A CONCENTRIC SYSTEM GENERATED BY PROFILED EXPLOSIONKALISKI G.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 25; NO 12; PP. 377-381; ABS. RUS; BIBL. 11 REF.Article

ELECTROLESS DEPOSITION OF CUPROUS OXIDE.GREENBERG CB; BREININGER JS.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 11; PP. 1681-1685; BIBL. 22 REF.Article

PLASMA-WALL TRANSITION IN AN OBLIQUE MAGNETIC FIELDCHODURA R.1982; PHYS. FLUIDS; ISSN 0031-9171; USA; DA. 1982; VOL. 25; NO 9; PP. 1628-1633; BIBL. 5 REF.Article

RESISTIVITY SOUNDING ON A MULTILAYERED EARTH CONTAINING TRANSITION LAYERS = SONDAGE RESISTIVITE DANS UNE TERRE STRATIFIEE CONTENANT DES COUCHES DE TRANSITIONBANERJEE B; SENGUPTA BJ; PAL BP et al.1980; GEOPHYS. PROSPECT.; ISSN 0016-8025; NLD; DA. 1980; VOL. 28; NO 5; PP. 750-758; BIBL. 6 REF.Article

ETUDE ELLIPSOMETRIQUE DES SYSTEMES SUPPORT SEMICONDUCTEUR-COUCHE EPITAXIQUE SEMICONDUCTRICE AVEC DISTRIBUTION COMPLEXE DE L'IMPURETE DOPANTEMARDEZHOV AS; SVITASHEV KK; SEMENENKO AI et al.1978; MIKROELEKTRONIKA; SUN; DA. 1978; VOL. 7; NO 6; PP. 545-552; BIBL. 11 REF.Article

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