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ZUR AENDERUNG DER STRUKTURPARAMETER VON BI UND BI85SB15 UNTER AEUSSEREM DRUCK. = MODIFICATION DES PARAMETRES STRUCTURAUX DE BI ET BI85SB15 SOUS UNE PRESSION EXTERNEWAGNER N; BRUEMMER O; KROLL J et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 6; PP. 597-604; ABS. ANGL.; BIBL. 10 REF.Article

OBSERVATION OF THE MAGNETIC-FIELD-INDUCED SEMIMETAL-SEMICONDUCTOR TRANSITION IN BI UNDER MEGAGAUSS FIELDSMIURA N; HIRUMA K; KIDO G et al.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 18; PP. 1339-1342; BIBL. 18 REF.Article

ON POSSIBILITY OF INDUCING TRANSITION FROM NORMAL TO MIXED VALENCE STATE IN SMS BY HIGH INTENSITY LASER BEAMVAIDYA SN.1982; JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; JPN; DA. 1982; VOL. 51; NO 1; PP. 153-156; BIBL. 20 REF.Article

A GAS-LIQUID TYPE TRANSITION OF SEMIMETALS IN STRONG MAGNETIC FIELD.NAKAJIMA S; YOSHIOKA D.1976; J. PHYS. SCO. JAP.; JAP.; DA. 1976; VOL. 40; NO 2; PP. 328-333; BIBL. 27 REF.Article

ELECTROREFLECTANCE STUDY OF THE DILUTE MAGNETIC SEMICONDUCTOR ALLOY HG1-XMNXTEAMIRTHARAJ PM; POLLAK FH; FURDYNA JK et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 35-39; BIBL. 20 REF.Article

DIELECTRIC PROPERTIES OF BI1-XSBX ALLOYS AT THE SEMICONDUCTOR-SEMIMETAL TRANSITIONRUDOLPH R; KRUGER H; FELLMUTH B et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 1; PP. 295-301; ABS. GER; BIBL. 12 REF.Article

TRANSITION SEMICONDUCTEUR-SEMIMETAL DANS L'ALLIAGE BI0,925)SB0,075) EN TRACTIONBRANDT NB; KOLOSOV VN; KUL'BACHINSKIJ VA et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 27; NO 1; PP. 1971-1973; BIBL. 4 REF.Article

CONTRIBUTION A L'ETUDE DE LA TRANSITION SEMICONDUCTEUR-SEMIMETAL DU TELLURE LIQUIDE A HAUTE TEMPERATURE ET HAUTE PRESSION = CONTRIBUTION TO THE STUDY OF THE SEMI-CONDUCTOR-SEMIMETAL TRANSITION OF LIQUID TELLURIUM AT HIGH TEMPERATURE AND HIGH PRESSUREBARRUE RICHARD.1981; ; FRA; DA. 1981; 110 P.-PL.; 30 CM; BIBL. 5 P.; TH.: SCI. PHYS./PARIS 11/1981/2428Thesis

TRANSITION SEMIMETAL-SEMICONDUCTEUR DANS L'ALLIAGE HG0,91)CD0,09)TE DU TYPE P SOUS PRESSIONBOVINA LA; BRANDT NB; DOLBANOV SV et al.1983; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1983; VOL. 84; NO 4; PP. 1453-1467; ABS. ENG; BIBL. 29 REF.Article

OBSERVATION OF SEMI-CONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPERLATTICESCHANG LL; KAWAI N; SAI HALASZ GA et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 12; PP. 939-941; BIBL. 11 REF.Article

STRUCTURALLY INDUCED SEMIMETAL-TO-SEMICONDUCTOR TRANSITION IN 1T-TISE2.ZUNGER A; FREEMAN AJ.1978; PHYS. REV. LETTERS; U.S.A.; DA. 1978; VOL. 40; NO 17; PP. 1155-1158; BIBL. 17 REF.Article

PRESSURE STUDY OF THE CRYSTAL-FIELD SPLITTING OF CO2+ IN CDTEGARDAVSKY J; WERNER A; HOCHHEIMER HD et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 9; PP. 4972-4976; BIBL. 15 REF.Article

SHUBNIKOV-DE HAAS EFFECT AND SEMIMETAL-SEMICONDUCTOR TRANSITION IN BISMUTH-ANTIMONY ALLOYS IN HIGH MAGNETIC FIELDSHIRUMA K; KIDO G; KAWAUCHI K et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 2; PP. 257-260; BIBL. 12 REF.Article

EFFECT OF EXCHANGE ON INTERBAND MAGNETO-ABSORPTION IN ZERO GAP HG1-KMNKTE MIXED CRYSTALS.BASTARD G; RIGAUX C; GULDNER Y et al.1978; J. PHYS.; FR.; DA. 1978; VOL. 39; NO 1; PP. 87-98; ABS. FR.; BIBL. 14 REF.Article

THE ELECTRICAL PROPERTIES OF HGTE AND HGSE UNDER VERY HIGH PRESSUREOHTANI A; SEIKE T; MOTOBAYASHI M et al.1982; JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS; ISSN 0022-3697; USA; DA. 1982; VOL. 43; NO 7; PP. 627-632; BIBL. 15 REF.Article

DETERMINATION OF THE CYCLOTRON MASSES OF THE CONDUCTION BAND OF BI1-XSBX NEAR THE SEMIMETAL-SEMICONDUCTOR TRANSITIONFELLMUTH B; KRUEGER H; RUDOLPH R et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 101; NO 2; PP. 695-703; ABS. GER; BIBL. 16 REF.Article

ETUDE DES INTERACTIONS D'ECHANGE DANS LES ALLIAGES HG1-KMNKTEBASTARD GERALD; RIGAUX CLAUDETTE.1980; ; FRA; DA. 1980; DGRST/78 7 0316; 18 P.; 30 CM; BIBL. 14 REF.; ACTION CONCERTEE: PHYSIQUE ELECTRONIQUEReport

PHASE TRANSITIONS IN YTTERBIUM UNDER PRESSURE.RAMESH TG; SHUBHA V; RAMASESHAN S et al.1977; J. PHYS. F; G.B.; DA. 1977; VOL. 7; NO 6; PP. 981-990; BIBL. 20 REF.Article

THREE DIMENSIONAL CHARACTER OF SEMIMETALLIC INAS-GASB SUPERLATTICESMAAN JC; GULDNER Y; VIEREN JP et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 5; PP. 683-686; BIBL. 11 REF.Article

MAGNETOOPTICAL INVESTIGATION OF HG1-XCDXTE MIXED CRYSTALS. II. SEMICONDUCTING CONFIGURATION AND SEMIMETAL->SEMICONDUCTOR TRANSITION.GULDNER Y; RIGAUX C; MYCIELSKI A et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 82; NO 1; PP. 149-158; ABS. FR.; BIBL. 15 REF.Article

Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlatticesALTARELLI, M.Physical review. B, Condensed matter. 1983, Vol 28, Num 2, pp 842-845, issn 0163-1829Article

ETUDE MAGNETOTHERMOELECTRIQUE DE LA TRANSITION METAL-SEMICONDUCTEUR DANS LES COMPOSES CR2+EPSILON SE3 = A MAGNETOTHERMOELECTRIC INVESTIGATION OF THE METAL-SEMICONDUCTOR TRANSITION IN COMPOUNDS OF THE TYPE CR2+EPSILON SE3PEIX GILLES.1982; ; FRA; DA. 1982; 126 P.; 22 CM; BIBL. 75 REF.; TH.: SCI/INST. NATL. SCI. APPL. LYON/1982/IDE 8206Thesis

SYNTHESE ET PROPRIETES DES SOLUTIONS SOLIDES DE LA1-XKXVO3 A STRUCTURE DE PEROWSKITEBAZUEV GV; MAKAROVA OV; SHVEJKIN GP et al.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 5; PP. 859-863; BIBL. 14 REF.Article

ETUDE DE LA TRANSITION SEMIMETAL->SEMICONDUCTEURS DANS LES ALLIAGES HG1-XCDXTE.GULDNER Y; RIGAUX C.1978; DGRST-75 70826; FR.; DA. 1978; PP. 1-17; BIBL. 1 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

THE OXYGEN DEFECT PEROVSKITES BA3LA3CU6O14+Y: A PROGRESSIVE TRANSITION FROM SEMI-CONDUCTIVE TO SEMI-METALLIC PROPERTIES. II: ELECTRON TRANSPORT PROPERTIESPROVOST J; STUDER F; MICHEL C et al.1981; SYNTH. MET.; ISSN 0379-6779; CHE; DA. 1981; VOL. 4; NO 2; PP. 157-167; BIBL. 12 REF.Article

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