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Results 1 to 25 of 39

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EXPERIMENTAL INVESTIGATION OF TRAPATT DIODE TRIGGER CONDITIONS.EAST JR; MASNARI NA; HADDAD GI et al.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 1; PP. 14-20; BIBL. 9 REF.Article

Numerische und experimentelle Untersuchungen optisch getriggerter TRAPATT-Dioden = Etude numérique et expérimentale de diodes TRAPATT à commande optique = Numerical and experimental study of optically triggered TRAPPAT diodesGOTTSTEIN, H.AEU. Archiv für Elektronik und Übertragungstechnik. 1985, Vol 39, Num 1, pp 15-19, issn 0001-1096Article

UTILISATION DE QUELQUES JONCTIONS P-N NON-SPECIALISEES EN TANT QUE DIODES D'AVALANCHELEVCHENKOV OI; TSARAPKIN DP.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 58-59; BIBL. 1 REF.Article

USE OF LOW DIELECTRIC CONSTANT SUBSTRATES FOR MICROSTRIP TIME-DELAY TRIGGERED TRAPATT OSCILLATORSNAZOA RUIZ N; AITCHISON CS.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1052-1054; BIBL. 3 REF.Article

FABRICATION AND THERMAL PERFORMANCE OF A NOVEL TRAPATT DIODE STRUCTURE.ROSEN A; PANG TING HO; KLATSKIN JB et al.1977; I.E.E.E. TRANS. ELECTRONS DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 159-163; BIBL. 10 REF.Article

SI P+PNN+ TRAPATT DIODE.OKANO S; KURODA M; ITOH M et al.1977; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1977; NO 110; PP. 35-38; BIBL. 2 REF.Article

AN EFFICIENT PASSIVATED TRAPATT DIODE STRUCTURE.KROGER H; GRACE MI; CURRIER LW et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1107-1108; BIBL. 7 REF.Article

COMPUTER SIMULATION OF CHARGE GENERATION IN TRAPPATS.BLAKEY PA.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 15; PP. 434-435; BIBL. 8 REF.Article

CONTROL OF TRAPATT OSCILLATIONS BY OPTICALLY GENERATED CARRIERS.KIEHL RA; EERNISSE EP.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 275-277; BIBL. 4 REF.Article

S-BAND TRAPATT OSCILLATOR WITH REDUCED FREQUENCY-TEMPERATURE DEPENDENCETUBRIDY G.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 16; PP. 579-580; BIBL. 1 REF.Article

CHARGE GENERATION IN TRAPATT DIODES.MACKINTOSH IW.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 8; PP. 231-233; BIBL. 6 REF.Article

THEORETICAL INVESTIGATIONS OF TRAPATT AMPLIFIER OPERATIONMAINS RK; MASNAR NA; HADDAD GI et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 10; PP. 1070-1076; BIBL. 11 REF.Article

DIFFERENCES OF PLASMA FORMATION AND EXTRACTION IN P+NN+ AND N+PP+ SILICON TRAPATT STRUCTURESVAITIEKUNAS F; VYSHNIAUSKAS J.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 822-824; BIBL. 10 REF.Article

DYNAMIC MINORITY-CARRIER STORAGE IN TRAPATT DIODESKIEHL RA.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 217-222; BIBL. 14 REF.Article

STATE-SPACE ESTIMATION OF TRAPATT-DIODE ACTIVE REGION CAPACITANCEMITCHELL RH; OBAH CDG.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 2; PP. 157-160; BIBL. 5 REF.Article

Experimental evidence of broad-band negative resistance characteristics of TRAPATT devicesKUMAR, K; FOULDS, K. W. H.IEEE electron device letters. 1983, Vol 4, Num 11, pp 399-402, issn 0741-3106Article

DESIGN AND PERFORMANCE OF I-BAND (8-10-GHZ) TRAPATT DIODES AND AMPLIFIERSOXLEY CH; HOWARD AM; PURCELL JJ et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 463-471; BIBL. 18 REF.Article

HARMONIC EFFECTS IN LOCKING AND INITIATION OF TRAPATT OSCILLATIONSMINASIAN RA; FORREST JR.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 13-17; BIBL. 11 REF.Article

X-BAND TRAPATT AMPLIFIERS.OXLEY CH; HOWARD AM; PURCELL JJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 14; PP. 416-418; BIBL. 5 REF.Article

TRAPATT'S: HIGH POWER DEVICES FOR WIDE PULSE AND CW MICROWAVE APPLICATIONS.GLEASON KR; COHEN ED; BARK ML et al.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 4; PP. 344-348; BIBL. 11 REF.Article

NUMERICAL INVESTIGATION OF TURN-ON CONDITIONS IN TRAPATT OSCILLATORS.BOGAN Z; FREY J.1976; I.E.E.E. TRANS. ELECTRON DEVICE; U.S.A.; DA. 1976; VOL. 24; NO 2; PP. 128-135; BIBL. 10 REF.Article

CIRCUIT BEHAVIOR AND IMPEDANCE CHARACTERISTICS OF BROAD-BAND TRAPATT-MODE AMPLIFIERSQUINE JP.1979; IEEE TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 1; PP. 23-31; BIBL. 36 REF.Article

ELECTRONIC FREQUENCY TUNING OF TRAPATT OSCILLATORSNAZOA RUIZ N; AITCHISON CS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 13; PP. 493-495; BIBL. 4 REF.Article

BEHAVIOR AND DYNAMICS OF OPTICALLY CONTROLLED TRAPATT OSCILLATORSKIEHL RA.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 703-710; BIBL. 13 REF.Article

FREQUENCY TUNING OF MICROSTRIP TRAPATT OSCILLATORSBOOTH PL; LONGLEY SR; NEWTON BH et al.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 6-10; BIBL. 8 REF.Article

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