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Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)DIATTA, M; BOUYSSOU, E; TREMOUILLES, D et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1103-1106, issn 0026-2714, 4 p.Conference Paper

Different failure signatures of multiple TLP and HBM stresses in an ESD robust protection structureGUITARD, N; ESSELY, F; TREMOUILLES, D et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1415-1420, issn 0026-2714, 6 p.Conference Paper

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes : Electrostatic Discharge ReliabilityLINTEN, D; THIJS, S; BORREMANS, J et al.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1440-1446, issn 0026-2714, 7 p.Conference Paper

Transient voltage overshoot in TLP testing : Real or artifact?TREMOUILLES, D; THIJS, S; ROUSSEL, Ph et al.Microelectronics and reliability. 2007, Vol 47, Num 7, pp 1016-1024, issn 0026-2714, 9 p.Conference Paper

Analysis of an ESD failure mechanism on a SiC MESFETPHULPIN, T; TREMOUILLES, D; ISOIRD, K et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2217-2221, issn 0026-2714, 5 p.Conference Paper

ESD defect localization and analysis using pulsed OBIC techniquesBEAUCHENE, T; LEWIS, D; TREMOUILLES, D et al.Proceedings - Electrochemical Society. 2003, pp 156-165, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

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