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Anomalous electrical conduction in silicon n+-i-n+ resistors at low temperaturesTSAMAKIS, D; GLEZOS, N.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 672-677, issn 0268-1242Article

ANISOTROPIC SCATTERING OF CONDUCTION ELECTRONS ON DILUTE CU IMPURITIES IN ALUMINIUMPAPASTAIKOUDIS C; THANOU E; TSAMAKIS D et al.1979; J. LOW TEMPER. PHYS.; USA; DA. 1979; VOL. 34; NO 3-4; PP. 429-437; BIBL. 13 REF.Article

Accurate measurements of the silicon intrinsic carrier density from 78 to 340 KMISIAKOS, K; TSAMAKIS, D.Journal of applied physics. 1993, Vol 74, Num 5, pp 3293-3297, issn 0021-8979Article

Electrical properties of crystalline Er and Dy silicide layersTSAMAKIS, D; VLACHOS, M; TRAVLOS, A et al.Thin solid films. 2002, Vol 418, Num 2, pp 211-214, issn 0040-6090, 4 p.Article

Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactorKOUTSOGIANNI, A; TSAMAKIS, D.Journal de physique. IV. 2001, Vol 83, pp Pr3.377-Pr3.383, issn 1155-4339Conference Paper

Anomalous effects on the current-voltage characteristics of p-channel metal-oxide-semiconductor transistors in the temperature range 4.2-50 KNASSIOPOULOS, A. G; TSAMAKIS, D; RECOFYLLOU, E et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1896-1901, issn 0021-8979Article

A 3-dimensional Wentzel―Krammers―Brillouin calculation of the charging and retention times of metal nanoparticles in a dielectric matrixANASTASSOPOULOS, A; KYRITSAKIS, A; XANTHAKIS, J. P et al.Thin solid films. 2013, Vol 543, pp 177-179, issn 0040-6090, 3 p.Conference Paper

Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperaturesTSAMAKIS, D; GLEZOS, N.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.93-C3.98, issn 1155-4339Conference Paper

Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticlesBENIAKAR, M; KLADAS, A; XANTHAKIS, J. P et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1856-1858, issn 0167-9317, 3 p.Conference Paper

Transport properties of polyoxometalate containing polymeric materialsGLEZOS, N; VELESSIOTIS, D; CHAIDOGIANNOS, G et al.Synthetic metals. 2003, Vol 138, Num 1-2, pp 267-269, issn 0379-6779, 3 p.Conference Paper

Electrical conduction effects at low temperatures in undoped ZnO thin films grown by Pulsed Laser Deposition on Si substratesBRILIS, N; TSAMAKIS, D; ALI, H et al.Thin solid films. 2008, Vol 516, Num 12, pp 4226-4231, issn 0040-6090, 6 p.Article

Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layerSARGENTIS, Ch; GIANNAKOPOULOS, K; TRAVLOS, A et al.Surface science. 2007, Vol 601, Num 13, pp 2859-2863, issn 0039-6028, 5 p.Conference Paper

Evidence of mobility edge in degenerate SOS filmsGHIBAUDO, G; TSAMAKIS, D; PAPATRIANTAFILLOU, C et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 22, pp 4479-4485, issn 0022-3719Article

Anomalous behaviour of N-channel MOS transistor characteristics in the temperature range 4.2-14 KROCOFYLLOU, E; NASSIOPOULOS, A. G; TSAMAKIS, D et al.Solid-state electronics. 1989, Vol 32, Num 8, pp 603-605, issn 0038-1101Article

Hydrogen gas sensors based on PLD grown NiO thin film structuresSTAMATAKI, M; TSAMAKIS, D; BRILIS, N et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 8, pp 2064-2068, issn 1862-6300, 5 p.Article

Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substratesPANDIS, Ch; BRILIS, N; TSAMAKIS, D et al.Solid-state electronics. 2006, Vol 50, Num 6, pp 1119-1123, issn 0038-1101, 5 p.Conference Paper

Growth and electrical characterisation of highly doped p-SiGe/Si heterostructuresTSAMAKIS, D; SARGENTIS, Ch; APOSTOLOPOULOS, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 221-224, issn 0921-5107Conference Paper

High-temperature behaviour of heavily doped SOS filmsTSAMAKIS, D; ROCOFYLLOU, E; PAPATRIANTAFILLOU, C et al.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 9, pp 1285-1291, issn 0022-3719Article

Electrical characterization of Cr Schottky contacts on undoped and Ni-doped p-ZnO films grown by pulsed laser deposition on Si ( 10 0) substratesSTAMATAKI, M; TSAMAKIS, D; XANTHAKIS, J. P et al.Microelectronic engineering. 2013, Vol 104, pp 95-99, issn 0167-9317, 5 p.Article

Annealing effects on the structural, electrical and H2 sensing properties of transparent ZnO thin films, grown by pulsed laser depositionSTAMATAKI, M; FASAKI, I; TSONOS, G et al.Thin solid films. 2010, Vol 518, Num 4, pp 1326-1331, issn 0040-6090, 6 p.Conference Paper

Dynamic behavior of charge in MOS devices embedded with Pt and Au nanoparticlesSARGENTIS, Ch; GIANNAKOPOULOS, K; TRAVLOS, A et al.Materials science in semiconductor processing. 2009, Vol 12, Num 1-2, pp 57-63, issn 1369-8001, 7 p.Conference Paper

Tunneling and negative resistance effects for composite materials containing polyoxometalate moleculesCHAIDOGIANNOS, G; VELESSIOTIS, D; ARGITIS, P et al.Microelectronic engineering. 2004, Vol 73-74, pp 746-751, issn 0167-9317, 6 p.Conference Paper

Tungsten oxide thin films chemically vapor deposited at low pressure by W(CO)6 pyrolysisDAVAZOGLOU, D; MOUTSAKIS, A; VALAMONTES, V et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 2, pp 595-599, issn 0013-4651Article

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticlesSARGENTIS, Ch; GIANNAKOPOULOS, K; TRAVLOS, A et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 38, Num 1-2, pp 85-88, issn 1386-9477, 4 p.Conference Paper

Epitaxial ErSi2-x on strained and relaxed Si1-xGexTRAVLOS, A; APOSTOLOPOULOS, G; BOUKOS, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 382-385, issn 0921-5107Conference Paper

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