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EXTREMELY LOW THRESHOLD (ALGA) AS GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 217-219; BIBL. 17 REF.Article

AL048IN052AS/GA047IN053AS/AL048IN052 AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65 MU MTSANG WT.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3861-3864; BIBL. 16 REF.Article

SELF-TERMINATING THERMAL OXIDATION OF ALAS EPILAYERS GROWN ON GAAS BY MOLECULAR BEAM EPITAXY.TSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 5; PP. 426-429; BIBL. 9 REF.Article

THE INFLUENCE OF BULK NONRADIATIVE RECOMBINATION IN THE WIDE BAND-GAP REGIONS OF MOLECULAR BEAM EPITAXIALLY GROWN GAAS-AL GA1-XAS DH LASERSTSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 3; PP. 245-248; BIBL. 22 REF.Article

EXTREMELY LOW THRESHOLD (ALGA)AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 786-788; BIBL. 16 REF.Article

CW MULTIWAVE LENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODESTSANG WT.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 441-443; BIBL. 16 REF.Article

SYMMETRIC SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS WITH LOW THRESHOLD AND NARROW BEAM DIVERGENCE BY M.B.E.TSANG WT.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 25-26; PP. 939-941; BIBL. 8 REF.Article

VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLEHETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 11-14; BIBL. 21 REF.Article

EXTENSION OF LASING WAVELENGTHS BEYOND 0.87 MU M IN GAAS/ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS BY IR INCORPORATION IN THE GAAS ACTIVE LAYERS DURING MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 661-663; BIBL. 18 REF.Article

LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 7; PP. 473-475; BIBL. 18 REF.Article

THE EFFECTS OF LATERAL CURRENT SPREADING, CARRIER OUT-DIFFUSION, AND OPTICAL MODE LOSSES ON THE THRESHOLD CURRENT DENSITY OF GAAS-ALXGA1-XAS STRIPE-GEOMETRY DH LASERS.TSANG WT.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 3 PART. 1; PP. 1031-1044; BIBL. 36 REF.Article

IN SITU OHMIC-CONTACT FORMATION TO N- AND P-GAAS BY MOLECULAR BEAM EPITAXYTSANG WT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1022-1025; BIBL. 14 REF.Article

THEORETICAL MODELING OF THE SIMULTANEOUS EXPOSURE AND DEVELOPMENT (SED) PROCESS OF A POSITIVE PHOTORESIST.TSANG WT.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 7; PP. 1918-1930; BIBL. 29 REF.Article

A GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN BEAMTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 134-137; BIBL. 14 REF.Article

INFRARED VISIBLE (0.89-0.72 MU M) ALXGA1-XAS/ALYGA1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1980; J. APPL. PHYS; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 917-919; BIBL. 15 REF.Article

DEVICE CHARACTERISTICS OF (ALGA)AS MULTIQUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 204-207; BIBL. 13 REF.Article

HIGH-THROUGH-PUT, HIGH-YIELD, AND HIGHLY-REPRODUCTIBLE (ALGA) AS DOUBLE-HETEROSTRUCTURE LASER WAFERS GROWN BY MOLECULAR BEAM EPITAXYTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 587-589; BIBL. 6 REF.Article

A NEW CURRENT-INJECTION HETEROSTRUCTURE LASER: THE DOUBLE-BARRIER DOUBLE-HETEROSTRUCTURE LASERTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 835-837; BIBL. 11 REF.Article

A VISIBLE (ALGA)AB HETEROSTRUCTURE LASER GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; DITZENBERGER JA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 193-194; BIBL. 21 REF.Article

EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR BEAM EPITAXYSWAMINATHAN V; TSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 5; PP. 347-349; BIBL. 18 REF.Article

TWO-DIMENSIONAL HOLE GAS AT A SEMICONDUCTOR HETEROJUNCTION INTERFACESTORMER HL; TSANG WT.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 685-687; BIBL. 17 REF.Article

GAAS-ALXGAL-XAS STRIP BURIED HETEROSTRUCTURE LASERSTSANG WT; LOGAN RA.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 6; PP. 451-469; BIBL. 44 REF.Article

MOLECULAR BEAM EPITAXIAL WRITING OF PATTERNED GAAS EPILAYER STRUCTURES.TSANG WT; CHO AY.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 8; PP. 491-493; BIBL. 4 REF.Article

GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR BEAM EPITAXY: A TECHNIQUE FOR TWO-DIMENSIONAL THIN-FILM DEFINITION.TSANG WT; CHO AY.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 6; PP. 293-296; BIBL. 16 REF.Article

(ALGA)AS STRIP BURIED-HETEROSTRUCTURE LASERS PREPARED BY HYBRID CRYSTAL GROWTHTSANG WT; LOGAN RA.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 397-398; BIBL. 9 REF.Article

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