SUPERSATURATED METASTABLE AG-NI SOLID SOLUTIONS FORMED BY ION BEAM MIXINGTSAUR BY; MAYER JW.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 389-392; BIBL. 11 REF.Article

EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SI FILMS ON (100) SITSAUR BY; HUNG LS.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 648-651; BIBL. 10 REF.Article

ION-BEAM-INDUCED MODIFICATION OF SILICIDE FORMATION IN RARE-EARTH METALS: ER-SI AND TB-SI SYSTEMS = MODIFICATION INDUITE PAR FAISCEAU D'ION DE LA FORMATION DE SILICIURE DANS LES LANTHANIDES: SYSTEMES ER-SI ET TB-SITSAUR BY; HUNG LS.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 922-924; BIBL. 11 REF.Article

METASTABLE AU-SI ALLOY FORMATION INDUCED BY ION-BEAM INTERFACE MIXING = FORMATION D'UN ALLIAGE AU-SI METASTABLE INDUITE PAR MELANGE A L'INTERFACE PAR FAISCEAU IONIQUETSAUR BY; MAYER JW.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 43; NO 2; PP. 345-361; BIBL. 28 REF.Article

OPTIMAL DESIGN OF HIGH-EFFICIENCY TANDEM CELLSFAN JCC; TSAUR BY; PALM BJ et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 692-701; BIBL. 22 REF.Conference Paper

CONTACT REACTION BETWEEN SI AND RARE EARTH METALS = REACTION DE CONTACT ENTRE SI ET LES LANTHANIDESTHOMPSON RD; TSAUR BY; TU KN et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 535-537; BIBL. 14 REF.Article

PHASE FORMATION IN CR-SI THIN-FILM INTERACTIONS = FORMATION D'UNE PHASE DANS LES INTERACTIONS DE COUCHES MINCES CR-SICOLGAN EG; TSAUR BY; MAYER JW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 938-940; BIBL. 10 REF.Article

MICROSECOND CARRIER LIFETIMES IN SI FILMS PREPARED ON SIO₂-COATED SI SUBSTRATES BY ZONE-MELTING RECRYSTALLIZATION AND BY SUBSEQUENT EPITAXIAL GROWTHTSAUR BY; FAN JCC; GEIS MW et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 83-85; BIBL. 9 REF.Article

LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORSFAN JCC; GEIS MW; TSAUR BY et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 5; PP. 365-367; BIBL. 8 REF.Article

GRAPHOEPITAXY OF GERMANIUM ON GRATINGS WITH SQUARE-WAVE AND SAWTOOTH PROFILESGEIS MW; TSAUR BY; FLANDERS DC et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 526-529; BIBL. 11 REF.Article

ION-BEAM-INDUCED METASTABLE PHASES IN THE AU-CO SYSTEM = PHASES METASTABLES INDUITES PAR FAISCEAU IONIQUE DANS LE SYSTEME AU-COTSAUR BY; LAU SS; MAYER JW et al.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 1; PP. 95-108; BIBL. 17 REF.Article

EFFICIENT GAAS/GE/SI SOLAR CELLSTSAUR BY; FAN JCC; TURNER GW et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 1143-1148; BIBL. 10 REF.Conference Paper

ION-BEAM-INDUCED METASTABLE PT₂SI₃ PHASE. III: STRUCTURE AND DIFFUSION IN AMORPHOUS PT₂SI₃GRACZYK JF; TU KN; TSAUR BY et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6772-6780; BIBL. 10 REF.Article

HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SITSAUR BY; GEIS MW; FAN JCC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 779-781; BIBL. 8 REF.Article

TRANSIENT ANNEALING OF ARSENIC-IMPLANTED SILICON USING A GRAPHITE STRIP HEATERTSAUR BY; DONNELLY JP; FAN JCC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 93-95; BIBL. 11 REF.Article

METASTABLE PHASES IN LASER-IRRADIATED PT-SI AND PD-SI THIN FILMSVON ALLMEN M; LAU SS; MAEENPAEAE M et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 84-86; BIBL. 9 REF.Article

EFFECTS OF SUBGRAIN BOUNDARIES ON CARRIER TRANSPORT IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO₂-COATED SI SUBSTRATESTSAUR BY; FAN JCC; GEIS MW et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 79-82; BIBL. 7 REF.Article

ZONE MELTING RECRYSTALLIZATION OF 3-IN.-DIAM SI FILMS ON SIO₂-COATED SI SUBSTRATESFAN JCC; TSAUR BY; CHAPMAN RL et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 186-188; BIBL. 8 REF.Article

PHASE TRANSFORMATIONS IN LASER-IRRADIATED AU-SI THIN FILMS = TRANSFORMATIONS DE PHASE DANS LES COUCHES MINCES AU-SI IRRADIEES PAR LASERVON ALLMEN M; LAU SS; MAENPAA M et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 3; PP. 205-207; BIBL. 10 REF.Article

PHASE SEPARATION IN ALLOY-SI INTERACTION = SEPARATION DE PHASES DANS L'INTERACTION ALLIAGE-SIOTTAVIANI G; TU KN; MAYER JW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 331-333; BIBL. 6 REF.Article

ION-BEAM-INDUCED INTERMIXING OF SURFACE LAYERS = INTERMELANGE INDUIT PAR FAISCEAU D'IONS POUR LES COUCHES DE SURFACETSAUR BY; LAU SS; LIAU ZL et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 63; NO 1; PP. 31-36; BIBL. 9 REF.Conference Paper

TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM ARSENIDE USING A GRAPHITE STRIP HEATERCHAPMAN RL; FAN JCC; DONNELLY JP et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 805-807; BIBL. 15 REF.Article

GAAS SHALLOW-HOMOJUNCTION SOLAR CELLS ON GE-COATED SI SUBSTRATESGALE RP; FAN JCC; TSAUR BY et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 169-171; BIBL. 11 REF.Article

IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO₂ USING LATERAL EPITAXY BY SEEDED SOLIDIFICATIONTSAUR BY; FAN JCC; GEIS MW et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 561-563; BIBL. 10 REF.Article

N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO₂TSAUR BY; GEIS MW; FAN JCC et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; NLD; DA. 1981; VOL. 39; NO 11; PP. 909-911; BIBL. 17 REF.Article