A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sitesTSZ YIN MAN; MANSUN CHAN.Microelectronics and reliability. 2005, Vol 45, Num 2, pp 349-354, issn 0026-2714, 6 p.Article

A 0.9-V Input Discontinuous-Conduction-Mode Boost Converter With CMOS-Control RectifierTSZ YIN MAN; MOK, Philip K. T; CHAN, Mansun J et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 9, pp 2036-2046, issn 0018-9200, 11 p.Article

A High Power Switch-Mode LED Driver with an Efficient Current Sensing SchemeWING YAN LEUNG; TSZ YIN MAN; DONGWEI ZHANG et al.Journal of low power electronics (Print). 2010, Vol 6, Num 1, pp 133-140, issn 1546-1998, 8 p.Article

Design and fabrication of an integrated programmable floating-gate microphoneTENGGE MA; TSZ YIN MAN; YICK CHUEN CHAN et al.Proceedings, IEEE micro electro mechanical systems. 2002, pp 288-291, issn 1084-6999, isbn 0-7803-7185-2, 4 p.Conference Paper

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectricsSAMANTA, Piyas; TSZ YIN MAN; CHAN, Alain Chun Keung et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1393-1401, issn 0268-1242, 9 p.Article