SINGLE INTERMETALLIC COMPOUND FORMATION IN PD-PB AND PD-SN THIN-FILM COUPLES STUDIES BY X-RAY DIFFRACTION = FORMATION D'UN SEUL COMPOSE INTERMETALLIQUE DANS LES COUPLES DE COUCHES MINCES PD-PB ET PD-SN ETUDIEE PAR DIFFRACTION DE RAYON XTU KN.1982; MATER. LETT.; ISSN 511080; NLD; DA. 1982; VOL. 1; NO 1; PP. 6-10; BIBL. 15 REF.Article

LOW TEMPERATURE ORDERING IN FINE-GRAINED AND DISORDERED CU₃AU THIN FILMS = MISE EN ORDRE A BASSE TEMPERATURE DANS LES COUCHES MINCES CU₃AU DESORDONNEES A GRAIN FINTU KN.1980; SCR. METALL.; ISSN 0036-9748; USA; DA. 1980; VOL. 14; NO 6; PP. 663-666; BIBL. 14 REF.Article

KINETICS OF THIN-FILM REACTIONS BETWEEN PB AND THE AGPD ALLOY.TU KN.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3400-3404; BIBL. 12 REF.Article

INTERDIFFUSION AND REACTION IN BIMETALLIC CU-SN THIN FILMSTU KN.1973; ACTA METALLURG.; E.U.; DA. 1973; VOL. 21; NO 4; PP. 347-354; ABS. FR. ALLEM.; BIBL. 27 REF.Serial Issue

THE CELLULAR REACTION IN PB-SN ALLOYSTU KN.1972; METALLURG. TRANS.; U.S.A.; DA. 1972; VOL. 3; NO 11; PP. 2769-2775; BIBL. 30 REF.Serial Issue

FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY BARRIER ON SI: ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SIEIZENBERG M; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1577-1585; BIBL. 12 REF.Article

LOW TEMPERATURE GETTERING OF CU, AG, AND AU ACROSS A WAFER OF SI BY AL = PIEGEAGE A BASSE TEMPERATURE DE CU, AG ET AU PAR AL A TRAVERS UNE PASTILLE DE SITHOMPSON RD; TU KN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 440-442; BIBL. 14 REF.Article

TITANIUM-TUNGSTEN CONTACTS TO SI: THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATIONBABCOCK SE; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6898-6905; BIBL. 17 REF.Article

WETTING OF QUARTZ SURFACES BY AU-SI EUTECTIC MELT.TU KN; LIBERTINI SH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 420-421; BIBL. 2 REF.Article

X-RAY STUDY OF INTERDIFFUSION IN BIMETALLIC CU-AU FILMSTU KN; BERRY BS.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 8; PP. 3283-3290; BIBL. 22 REF.Serial Issue

KINETICS OF INTERFACIAL REACTION IN BIMETALLIC CU-SN THIN FILMSTU KN; THOMPSON RD.1982; ACTA METALL.; USA; DA. 1982-05; VOL. 30; NO 5; PP. 947-952; BIBL. 16 REF.Article

SHALLOW SILICIDE-TO-SILICON CONTACTS: THE CASE OF AMORPHOUS-PD₈₀SI₂₀-TO-SILICONKRITZINGER S; TU KN.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 205-208; BIBL. 9 REF.Article

ANALYSIS OF PARALLEL SCHOTTKY CONTACTS BY DIFFERENTIAL INTERNAL PHOTOEMISSION SPECTROSCOPYOKUMURA T; TU KN.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 922-927; BIBL. 14 REF.Article

PARALLEL SILICIDE CONTACTSOHDOMARI I; TU KN.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3735-3739; BIBL. 5 REF.Article

FORBIDDEN 200 DIFFRACTION SPOTS IN SILICON.TU KN; HOWIE A.1978; PHILOS MAG., B; G.B.; DA. 1978; VOL. 37; NO 1; PP. 73-81; BIBL. 8 REF.Article

FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON N-TYPES SILICONEIZENBERG M; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6885-6890; BIBL. 26 REF.Article

SCHOTTKY BARRIER OF NONUNIFORM CONTACTS TO N-TYPE AND P-TYPE SILICONTHOMPSON RD; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4285-4288; BIBL. 23 REF.Article

IDENTIFICATION OF DIFFUSION SPECIES IN V-SIO₂ REACTIONSCHU WK; TU KN.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 83-85; BIBL. 16 REF.Article

CONTACT REACTION BETWEEN SI AND RARE EARTH METALS = REACTION DE CONTACT ENTRE SI ET LES LANTHANIDESTHOMPSON RD; TSAUR BY; TU KN et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 7; PP. 535-537; BIBL. 14 REF.Article

CIRCULAR ETCH PITS IN ION-IMPLANTED AMORPHOUS SILICON FILMSTU KN; TAN SI; CROWDER BL et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 6; PP. 274-275; BIBL. 4 REF.Serial Issue

DIRECT OBSERVATIONS OF DEFECTS IN IMPLANTED AND POST-ANNEALED SILICON WAFERS.GLOWINSKI LD; TU KN; HO PS et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 312-313; BIBL. 11 REF.Article

STRUCTURE AND GROWTH KINETICS OF NI₂SI ON SILICON.TU KN; CHU WK; MAYER JW et al.1975; THIN SOLID FILMS,; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 403-413; BIBL. 20 REF.Article

INTERACTION BETWEEN CHROMIUM OXIDE AND CHROMIUM SILICIDECROS A; POLLAK RA; TU KN et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 1; PP. 258-259; BIBL. 9 REF.Article

INTERFACIAL REACTION AND SCHOTTKY BARRIER BETWEEN PT AND GAAS = REACTION INTERFACIALE ET BARRIERE DE SCHOETTKY ENTRE PT ET GAASFONTAINE C; OKUMURA T; TU KN et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 3; PP. 1404-1412; BIBL. 19 REF.Article

SHALLOW SILICIDE CONTACTS FORMED BY USING CODEPOSITED PT₂SI AND PT_1.2SI FILMSEIZENBERG M; FOELL H; TU KN et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 547-549; BIBL. 12 REF.Article