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CIRCUIT MODEL OF DOUBLE-HETEROJUNCTION LASER BELOW THRESHOLDTUCKER RS.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 3; PP. 101-106; BIBL. 18 REF.Article

LARGE-SIGNAL CIRCUIT MODEL FOR SIMULATION OF INJECTION-LASER MODULATION DYNAMICSTUCKER RS.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 180-184; BIBL. 20 REF.Article

THIRD-ORDER INTERMODULATION DISTORTION AND GAIN COMPRESSION IN GAAS FET'STUCKER RS.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 400-408; BIBL. 8 REF.Article

OPTIMUM LOAD ADMITTANCE FOR A MICROWAVE POWER TRANSISTORTUCKER RS.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 410-411; BIBL. 5 REF.Article

RF CHARACTERIZATION OF MICROWAVE POWER FET'STUCKER RS.1981; IEEE TRANS. MICROWARE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 8; PP. 776-781; BIBL. 14 REF.Article

METHOD FOR MEASURING 3RD-ORDER INTERMODULATION DISTORTION IN GAAS F.E.T.S.RAUSCHER C; TUCKER RS.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 23; PP. 701-702; BIBL. 3 REF.Article

MICROWAVE CIRCUIT MODELS OF SEMICONDUCTOR INJECTION LASERSTUCKER RS; POPE DJ.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 3; PP. 289-294; BIBL. 13 REF.Article

MODES OF OPERATION IN DUAL-GATE MESFET MIXERSASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 11; PP. 428-429; BIBL. 5 REF.Article

S-PARAMETER MODEL OF DUAL-GATE GAAS MESFETASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 39-40; BIBL. 2 REF.Article

MODELING THE 3RD-ORDER INTERMODULATION-DISTORTION PROPERTIES OF A GAAS F.E.T.TUCKER RS; RAUSCHER C.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 17; PP. 508-510; BIBL. 3 REF.Article

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