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Si-doped IN_0.23GA_0.77N/GAN short-period superlattice tunneling contact layer used on InGaN/GaN laser diodeTUN, C. J; TU, R. C; SHEU, J. K et al.Proceedings - Electrochemical Society. 2004, pp 254-259, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Self-assembled InN dots grown on GaN with an In_0.08Ga_0.92N intermediate layer by metal organic chemical vapor depositionFU, Y. K; KUO, C. H; TUN, C. J et al.Journal of crystal growth. 2008, Vol 310, Num 20, pp 4456-4459, issn 0022-0248, 4 p.Article

Applications of transparent Al-doped ZnO contact on GaN-based power LEDTUN, C. J; SHEU, J. K; PONG, B. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61210X.1-61210X.8, issn 0277-786X, isbn 0-8194-6163-6Conference Paper

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