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EFFET TUNNEL INELASTIQUE AUX CONTACTS A BASE DE SODIUMLYSYKH AA; NAJDYUK YU G.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 1; PP. 10-14; BIBL. 13 REF.Article

A NEW APPROACH TO THE ELASTIC TUNNELING CURRENT IN METAL-INSULATOR-METAL DIODES.ALBRECHT H; KELLER G; THIEME F et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 69; NO 2; PP. 677-688; BIBL. 11 REF.Article

PROXIMITY ELECTRON TUNNELING SPECTROSCOPYWOLF EL; ARNOLD GB.1982; PHYS. REP.; ISSN 0370-1573; NLD; DA. 1982; VOL. 91; NO 2; PP. 32-102; BIBL. 150 REF.Serial Issue

EFFET TUNNEL EN TENANT COMPTE DE L'ANGLE D'INCIDENCE DE L'ELECTRONSIVERS VN; KRICHEVETS YU M.1976; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1976; VOL. 21; NO 12; PP. 2043-2046; ABS. ANGL.; BIBL. 4 REF.Article

DIGITAL INELASTIC ELECTRON TUNNELING SPECTROMETERDARGIS AB.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 1; PP. 46-51; BIBL. 18 REF.Article

RESONANT TUNNELING IN MIM STRUCTURESLEIPOLD WC; FEUCHTWANG TE.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 507; BIBL. 4 REF.Article

ASYMMETRY IN INELASTIC ELECTRON TUNNELING PEAK INTENSITIESKONKIN MK; MAGNO R; ADLER JG et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 10; PP. 645-647; BIBL. 7 REF.Article

NEGATIVE RESISTANCE IN A TRIPLE-BARRIER STRUCTURE OF AL-AL2O3.TAKABE S; YASUI K; KANEDA S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 636-637; BIBL. 8 REF.Article

RESONANT TUNNELING CURRENT FOR GENERAL JUNCTION POTENTIAL BARRIERAYMERICH HUMET X; SERRA MESTRES F.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 583-592; ABS. FRE; BIBL. 9 REF.Article

LEIT EFFECT IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL JUNCTIONSMCCARTHY SL; LAMBE J.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 858-860; BIBL. 18 REF.Article

RESONANT TUNNELING THROUGH SI/SIO2 DOUBLE BARRIERS.HIROSE M; MORITA M; OSAKA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 561-564; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

ELASTIC AND INELASTIC TUNNELLING IN SINGLE-LAYER LANGMUIR FILMSGINNAL TM; OXLEY DP; PRITCHARD RG et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 68; NO 1; PP. 241-256; BIBL. 23 REF.Article

ELECTRON TRANSPORT IN VERY THIN MULTILAYERS OF AL-A1203TAKABE S; YASUI K; KANEDA S et al.1978; INTERN. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 3; PP. 257-263; BIBL. 13 REF.Article

CONTRIBUTION A L'ETUDE DE L'EFFET DE TUNNEL RESONNANT DANS LES BARRIERES SCHOTTKY.KOMENAN KOUADJA.1977; ; S.L.; DA. 1977; PP. 1-63; BIBL. 3 P.; (THESE DOCT. SPEC. MATH. APPL., OPTION PHYS. MATH.; PAUL SABATIER TOULOUSE)Thesis

COURANT TUNNEL RESONNANT AU CONTACT METAL-SEMICONDUCTEURKOROL AN; STRIKHA VI; SHEKA DI et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1180-1185; BIBL. 12 REF.Article

UNE SPECTROSCOPIE RECENTE EN PHYSIQUE DU SOLIDE: L'EFFET TUNNEL INELASTIQUE.SALACE G.1977; SPECTRA 2000; FR.; DA. 1977; NO 38; PP. 29-36; BIBL. 17 REF.Article

THEORY OF LIGHT EMISSION FROM SMALL PARTICLE TUNNEL JUNCTIONSHONE D; MUEHLSCHLEGEL B; SCALAPINO DJ et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 2; PP. 203-204; BIBL. 4 REF.Article

RESONANT TUNNELING VIA LOCALIZED IMPURITY STATES IN METAL-INSULATOR-METAL JUNCTIONSDE S CHRISTENSEN N; CHRISTENSEN NE.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 12; PP. 1259-1261; BIBL. 9 REF.Article

STIMULATED EMISSION OF SURFACE PLASMONS BY ELECTRON TUNNELING IN METAL-BARRIER-METAL STRUCTURES.STU DP; GUSTAFSON TK.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 500-502; BIBL. 11 REF.Article

THEORIE DE LA LIAISON TUNNEL RESONNANTE DES GUIDES D'ONDES OPTIQUES A COUCHES.IOGANSEN LV; MALOV VV.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 5; PP. 997-1004; BIBL. 10 REF.Article

EFFECT OF COVER ELECTRODE METAL ON INELASTIC ELECTRON TUNNELING STRUCTURE.MAGNO R; KONKIN MK; ADLER JG et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 69; NO 2; PP. 437-443; BIBL. 10 REF.Article

ZERO BIAS ANOMALY DUE TO ELASTIC TUNNELING IN MIM STRUCTURESAYMERICH HUMET X; SERRA MESTRES F.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 655-663; ABS. FRE; BIBL. 14 REF.Article

LIGHT EMISSION FROM INELASTIC ELECTRON TUNNELING.LAMBE J; MCCARTHY SL.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 14; PP. 923-925; BIBL. 13 REF.Article

DIRECT EVIDENCE OF ELECTRON TUNNELING IN THE IONIZATION OF SPUTTERED ATOMSYU ML; LANG ND.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 2; PP. 127-130; BIBL. 13 REF.Article

ELECTRICAL CHARACTERIZATION OF AL-SIO2-SI (N-TYPE) TUNNEL STRUCTURES. INFLUENCE OF LPCVD AND LPO2 OXIDE GROWTH TECHNOLOGIES ON THE PROPERTIES OF THE SI-SIO2 INTERFACEPANANAKAKIS G; KAMARINOS G; EL SAYED M et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 415-426; BIBL. 37 REF.Article

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