Line tension of extended double kinks in thin filmsTWIGG, M. E.Journal of applied physics. 1990, Vol 68, Num 10, pp 5109-5114, issn 0021-8979Article

Indirect determination of the single loss function from plural scattering dataTWIGG, M. E.Ultramicroscopy. 1982, Vol 10, Num 3, pp 291-296, issn 0304-3991Article

Morphological instability in InAs/GaSb heterostructuresTWIGG, M. E; BENNETT, B. R; MAGNO, R et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 651-662, issn 0022-0248Article

A comparison of two models for the characteristic X-ray fluorescence correction in thin foil analysisTWIGG, M. E; FRASER, H. L.Journal of microscopy (Print). 1984, Vol 133, Num 1, pp 61-67, issn 0022-2720Article

GaN decomposition in H₂ and N₂ at MOVPE temperatures and pressuresKOLESKE, D. D; WICKENDEN, A. E; HENRY, R. L et al.Journal of crystal growth. 2001, Vol 223, Num 4, pp 466-483, issn 0022-0248Article

Magnetic resonance studies of defects in GaN with reduced dislocation densitiesGLASER, E. R; FREITAS, J. A; SUSKI, T et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 51-57, issn 0921-4526Conference Paper

Epitaxial Si-based tunnel diodesTHOMPSON, P. E; HOBART, K. D; TWIGG, M. E et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 145-150, issn 0040-6090Conference Paper

Interfacial disorder in InAs/GaSb superlatticesTWIGG, M. E; BENNETT, B. R; THIBADO, P. M et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1998, Vol 77, Num 1, pp 7-30, issn 1364-2804Article

Defect mechanisms in degradation of 1.3-υm wavelength channeled-substrate buried heterostructure lasersCHU, S. N. G; NAKAHARA, S; TWIGG, M. E et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 611-623, issn 0021-8979Article

Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface stepsBASSIM, N. D; TWIGG, M. E; TRUNEK, A. J et al.Journal of crystal growth. 2007, Vol 304, Num 1, pp 103-107, issn 0022-0248, 5 p.Article

Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBTMASTRO, M. A; EDDY, C. R; BASSIM, N. D et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 251-256, issn 0038-1101, 6 p.Article

Resistivity control in unintentionally doped GaN films grown by MOCVDWICKENDEN, A. E; KOLESKE, D. D; HENRY, R. L et al.Journal of crystal growth. 2004, Vol 260, Num 1-2, pp 54-62, issn 0022-0248, 9 p.Article

Selective removal of Si_1-xGe_x from (100) Si using HNO₃ and HFGODBEY, D. J; KRIST, A. H; HOBART, K. D et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 10, pp 2943-2947, issn 0013-4651Article

The complementary use of atom probe field ion microscopy and analytical transmission electron microscopy for the study of a Ni-base superalloy = L'usage complémentaire de la microscopie ionique à émission de champ à sonde atomique et microscopie électronique en transmission analytique pour l'étude d'un superalliage à base de NiMELMED, A. J; TWIGG, M. E; KLEIN, R et al.Journal de physique. Colloques. 1984, Vol 45, Num 9, pp 373-378, issn 0449-1947Article

Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast ImagingTWIGG, M. E; PICARD, Y. N; CALDWELL, J. D et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 743-746, issn 0361-5235, 4 p.Conference Paper

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and PhotoluminescencePICARD, Y. N; LIU, K. X; STAHLBUSH, R. E et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 655-661, issn 0361-5235, 7 p.Article

Growth and characterization of III-N bulk crystalsFRAZIER, R. M; FEIGELSON, B. N; TWIGG, M. E et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 8-9, pp 845-848, issn 0957-4522, 4 p.Conference Paper

Growth of high quality, epitaxial InSb nanowiresPARK, Hyun D; PROKES, S. M; TWIGG, M. E et al.Journal of crystal growth. 2007, Vol 304, Num 2, pp 399-401, issn 0022-0248, 3 p.Article

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaNKOLESKE, D. D; WICKENDEN, A. E; HENRY, R. L et al.Journal of crystal growth. 2002, Vol 242, Num 1-2, pp 55-69, issn 0022-0248Article

Composition and strain of self-assembled (In,Ga,Al)Sb/(Ga,Al)As quantum dotsBENNETT, B. R; SHANABROOK, B. V; GLASER, E. R et al.Superlattices and microstructures. 1997, Vol 21, Num 2, pp 267-272, issn 0749-6036Article

Sputtering synthesis and properties of molybdenum nanocrystals and Al/Mo layered nanocompositesCHOW, G. M; PATTNAIK, A; SCHLESINGER, T. E et al.Journal of materials research. 1991, Vol 6, Num 4, pp 737-743, issn 0884-2914, 7 p.Article

MBE-grown germanium on sapphire (1102)GODBEY, D. J; QADRI, S. B; TWIGG, M. E et al.Thin solid films. 1990, Vol 184, pp 379-386, issn 0040-6090, 8 p.Conference Paper

Study of structural faults in Ti-diffused lithium niobateTWIGG, M. E; MAHER, D. M; NAKAHARA, S et al.Applied physics letters. 1987, Vol 50, Num 9, pp 501-503, issn 0003-6951Article

High-resolution x-ray analysis of strain in low-temperature GaAsFATEMI, M; TADAYON, B; TWIGG, M. E et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 12, pp 8911-8917, issn 0163-1829Article

Relief of compressive biaxial strains in thin films via microtwinsTWIGG, M. E; RICHMOND, E. D; PELLEGRINO, J. G et al.Journal of applied physics. 1990, Vol 67, Num 8, pp 3706-3710, issn 0021-8979Article