au.\*:("TYAGULSKII, I. P")
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Flash-Lamp annealing of Si-SiO2 transition layer defectsLYSENSKO, V. S; ZIMENKO, V. I; TYAGULSKII, I. P et al.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp K175-K180, issn 0031-8965Article
Transport and interface states in high-κ LaSiOx dielectricGOMENIUK, Y. Y; GOMENIUK, Y. V; TYAGULSKII, I. P et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1342-1345, issn 0167-9317, 4 p.Conference Paper
Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper
Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperaturesTYAGULSKII, I. P; TYAGULSKII, S. I; NAZAROV, A. N et al.Microelectronic engineering. 2013, Vol 109, pp 31-34, issn 0167-9317, 4 p.Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodesNAZAROV, A. N; OSIYUK, I. N; SUN, J. M et al.Applied physics. B, Lasers and optics (Print). 2007, Vol 87, Num 1, pp 129-134, issn 0946-2171, 6 p.Article
Interrelation between surface states and transition layer defects in Si-SiO2 structuresLYSENKO, V. S; SYTENKO, T. N; SNITKO, O. V et al.Solid state communications. 1986, Vol 57, Num 3, pp 171-174, issn 0038-1098Article