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Etude d'une nouvelle génération de capteurs silicium à partir de la technologie SIMOX = Study of a new SIMOX technology silicon sensor generationDiem, Bernard; Rey, Patrice.1991, 24 p.Report

Formation of thermal donors in SIMOX materialHENLEY, W. B; EDELMAN, P; ANC, M et al.Journal of electronic materials. 1992, Vol 21, Num 5, pp 519-522, issn 0361-5235Article

Increase in probability of ion capture into the planar channelling regime by a buried oxide layerGUIDI, V; MAZZOLARI, A; TIKHOMIROV, V. V et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 16, issn 0022-3727, 165301.1-165301.6Article

Gettering of Cu and Ni impurities in SIMOX wafersJABLONSKI, J; MIYAMURA, Y; IMAI, M et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 2059-2066, issn 0013-4651Article

Quantized conductance of a silicon wire fabricated by separation-by-implanted-oxygen technologyNAKAJIMA, Y; TAKAHASHI, Y; HORIGUCHI, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1309-1314, issn 0021-4922, 1Conference Paper

Effect of implantation energy and dose on low-dose SIMOX structuresTAMURA, M; TOKIGUCHI, K; SEKI, H et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 7, pp 1375-1383, issn 0947-8396, 9 p.Article

SUBSTRATE BIAS EFFECT OF C-MOS OPERATIONAL AMPLIFIER USING SIMOX TECHNOLOGYAKIYA M; KIMURA T.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 36-37; BIBL. 6 REF.Article

Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beamsUEDONO, A; YAMAMOTO, H; NAKANO, A et al.IEEE International SOI conference. 2002, pp 196-197, isbn 0-7803-7439-8, 2 p.Conference Paper

Raman characterization of SOI-SIMOX structuresMARTIN, E; JIMENEZ, J; PEREZ-RODRIGUES, A et al.Materials letters (General ed.). 1992, Vol 15, Num 1-2, pp 122-126, issn 0167-577XArticle

Investigation of interface in silicon-on-insulator by fractal analysisLIU, X. H; CHEN, J; CHEN, M et al.Applied surface science. 2002, Vol 187, Num 3-4, pp 187-191, issn 0169-4332Article

Oxygen-related defects in the top silicon layer of SIMOX ; the effect of thermal treatmentsRIVERA, A; DE NIJS, J. M. M; BALK, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 77-81, issn 0921-5107Conference Paper

Evaluation of surface defects on SIMOX and their influences on device characteristicsNARUOKA, H; IWAMATSU, T; TANAKA, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 40-44, issn 0022-0248Conference Paper

Ellipsometric analysis of ultrathin oxide layers on SIMOX wafersMOTOOKA, T; KUSANO, Y; NISIHIRA, K et al.Applied surface science. 2000, Vol 159-60, pp 111-115, issn 0169-4332Conference Paper

MEIS study of antimony implantation in SIMOX and vacancy-rich Si(100)DALPONTE, M; BOUDINOV, H; GONCHAROVA, L. V et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 14, pp 4222-4227, issn 0022-3727, 6 p.Article

Formation of ultra-thin SOI by dose-energy optimizationMENG CHEN; XIANG WANG; YEMING DONG et al.IEEE International SOI conference. 2002, pp 113-114, isbn 0-7803-7439-8, 2 p.Conference Paper

Effect of high-temperature annealing on deep levels in thin silicon-on-insulator layers separated by implanted oxygenKANG, B. K; KANG, H. S; AHN, C. G et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 9, pp 3489-3493, issn 0013-4651Article

Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applicationsALLEN, R. A; GHOSHTAGORE, R. N; CRESSWELL, M. W et al.SPIE proceedings series. 1998, pp 124-131, isbn 0-8194-2777-2Conference Paper

Recent developments in electrical linewidth and overlay metrology for integrated circuit fabrication processesCRESSWELL, M. W; SNIEGOWSKI, J. J; GHOSHTAGORE, R. N et al.Japanese journal of applied physics. 1996, Vol 35, Num 12B, pp 6597-6609, issn 0021-4922, 1Conference Paper

Subscriber line interface circuit LSI fabricated using high-voltage CMOS/SIMOX technologyNAKASHIMA, S; MAEDA, Y.Electronics Letters. 1983, Vol 19, Num 25-26, pp 1095-1097, issn 0013-5194Article

Effect of ion-induced defects and oxygen concentration in annealing atmosphere on formation of buried oxide layer in SIMOX materialsJING CHEN; XIANG WANG; BO JIN et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 305-309, issn 0268-1242, 5 p.Article

Comparison of algorithms used for evaluation of ellipsometric measurements Random search, genetic algorithms, simulated annealing and hill climbing graph-searchesPOLGAR, O; FRIED, M; LOHNER, T et al.Surface science. 2000, Vol 457, Num 1-2, pp 157-177, issn 0039-6028Article

Oxygen-related defects and their annealing behavior in low-dose: Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beamsCHEN, Z. Q; UEDONO, Akira; OGURA, Atsushi et al.Applied surface science. 2002, Vol 194, Num 1-4, pp 112-115, issn 0169-4332, 4 p.Conference Paper

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keVJUN JIAO; JOHNSON, B; SERAPHIN, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 72, Num 2-3, pp 150-155, issn 0921-5107Conference Paper

Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulatorGILES, L. F; KUNII, Y; IZUMI, K et al.Journal of electronic materials. 1999, Vol 28, Num 1, pp 13-18, issn 0361-5235Article

Low-loss optical waveguide on standard SOI/SIMOX substrateLAYADI, A; VONSOVICI, A; OROBTCHOUK, R et al.Optics communications. 1998, Vol 146, Num 1-6, pp 31-33, issn 0030-4018Article

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