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Gate oxide defects connected to submicron isolation regions subjected to selective oxidationITSUMI, M; NAKAJIMA, O; MINEGISHI, K et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1160-1164, issn 0013-4651Article

Oxide isolation for double-polysilicon VLSI devicesLEVIN, R. M; SHENG, T. T.Journal of the Electrochemical Society. 1983, Vol 130, Num 9, pp 1894-1897, issn 0013-4651Article

Isolation mobile: aspects économiquesJOSSE, J. L.1983, Num 29, pp 85-87, issn 0753-3489Article

Techniques d'isolement pour intégration à très grande échelleBEERNAERT, D; SCHOLS, G; VAN ISEGHEM, P et al.Revue des Télécommunications. 1982, Vol 57, Num 2, pp 161-166, issn 0373-8582Article

THE N+-IPOS SCHEME AND ITS APPLICATIONS TO IC'S.ARITA Y; KATO K; SUDO T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 756-757; BIBL. 8 REF.Article

Preinsulated pipelines today and tomorrow: report on the urichal seminar in Herning/DK on 14 and 15 June 1988BUBLITZ, D; ZIEMANN, O.District heating international. 1988, Vol 17, Num 6, pp 357-364, issn 0933-6540Article

Strategies and test structures for improving isolation between circuit blocksSZMYD, David; GAMBUS, Laurent; WILBANKS, William et al.2002 international conference on microelectronic test structures. 2002, pp 89-93, isbn 0-7803-7464-9, 5 p.Conference Paper

Effects of back-side oxidation of Si substrates on Sb diffusion at front sideMIZUO, S; HIGUCHI, H.Journal of the Electrochemical Society. 1983, Vol 130, Num 9, pp 1942-1947, issn 0013-4651Article

A multi trench analog+logic protection (M-TRAP) for substrate crosstalk prevention in a 0.25μm smart power platform with 100V high-side capabilityPARTHASARATHY, V; KHEMKA, V; ZHU, R et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 427-430, isbn 4-88686-060-5, 4 p.Conference Paper

Thermal aging of silicone oil aromatic polyamide insulation systemsABE, K; HAMAGUCHI, M; UMEMURA, T et al.IEEE transactions on dielectrics and electrical insulation. 1998, Vol 5, Num 4, pp 578-582, issn 1070-9878Article

Device modeling for recessed oxide isolation in bipolar LSIsKOTANI, N; KAWAZU, S.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1897-1900, issn 0021-4922Article

EFFECTS OF OXIDE ISOLATION ON PROPAGATION DELAY IN INTEGRATED INJECTION LOGIC (I2L).IIZUKA T.1977; I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 5; PP. 547-552; BIBL. 12 REF.Article

A HIGH VOLTAGE DIELECTRIC ISOLATED THYRISTOR CROSSPOINT ARRAYKUSAKA T; ISHII T; NEGORO T et al.1980; N.E.C. RES. DEVELOP.; JPN; DA. 1980; NO 57; PP. 39-45; BIBL. 12 REF.Article

A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICONIMAI K.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 159-164; BIBL. 11 REF.Article

SOME ASPECTS OF OXIDE ISOLATION TECHNOLOGYPAREKH PC.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 10; PP. 1703-1707; BIBL. 8 REF.Article

METHODE ET APPAREILLAGE POUR LA DETERMINATION DES PARAMETRES GEOMETRIQUES DES STRUCTURES DU SILICIUM AVEC ISOLATION DIELECTRIQUEOKSANICH AP; KONTSEVOJ YU A.1978; ZAVODSK. LAB.; SUN; DA. 1978; VOL. 44; NO 12; PP. 1494-1496; BIBL. 8 REF.Article

LA TECHNOLOGIE CDI OFFRE SES PERFORMANCES A LA FREQUENCEMETRIE.SECAZE G.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 217; PP. 35-37Article

SEALED-INTERFACE LOCAL OXIDATION TECHNOLOGYHUI JCH; CHIU TY; WONG SWS et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 184-191; BIBL. 10 REF.Article

CDI AND COMPETITIVE TECHNOLOGIES.BRUCHEZ J.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 5; NO 4; PP. 45-54Article

EVOLUTION DE L'ISOLEMENT INTERCOMPOSANTS AVEC LES TECHNOLOGIES BIPOLAIRESLILEN H.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 175; PP. 63-67Serial Issue

Innovation in materials with an impact on electrical energy applicationsFRECHETTE, Michel; SAVOIE, Sylvio; DAVID, Eric et al.European journal of electrical engineering. 2010, Vol 13, Num 5-6, pp 765-784, issn 2103-3641, 20 p.Article

Role of abrasives in high selectivity STI CMP slurriesMANIVANNAN, R; RAMANATHAN, S.Microelectronic engineering. 2008, Vol 85, Num 8, pp 1748-1753, issn 0167-9317, 6 p.Article

Integrierte isolatortechnologie zur herstellung von zellbasierten arzneimitteln unter sterilbedingungen = Integrated Isolator Technology based sterile production of cell based drugsNORWIG, Jürgen; JOSMOVIC-ALASEVIC, Olivera; FRITSCH, Karl-Gerd et al.Pharmazeutische Industrie. 2001, Vol 63, Num 7, pp 780-784, issn 0031-711XArticle

Flowfill-process as a new concept for inter-metal-dielectricsHÖCKELE, U; KRÖNINGER, W; PFEIFER, G et al.Materials science forum. 1998, pp 235-238, issn 0255-5476, isbn 0-87849-815-XConference Paper

Use of surface insulation resistance and contact angle measurements to characterize the interactions of three water soluble fluxes with FR-4 substratesJACHIM, J. A; FREEMAN, G. B; TURBINI, L. J et al.IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging. 1997, Vol 20, Num 4, pp 443-451, issn 1070-9894Article

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