Failure mechanisms in advanced BCD technology during reliability qualificationVAN HASSEL, J. G; BOCK, G. A. D; VAN DEN BERG, G et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1697-1700, issn 0026-2714, 4 p.Conference Paper

People and technology : Matching technology to peopleSETON, J; HOLLIER, M. P; STENTIFORD, F. W et al.BT technology journal. 1999, Vol 17, Num 1, pp 11-14, issn 1358-3948Article

Vernieuwing in de civielo techniek in verleden en heden = Innovations dans le génie civil depuis la dernière guerre mondiale = Innovations in civil engineering since the last world warVANDEPITTE, D.Het ingenieursblad. 1989, Vol 58, Num 4, pp 35-39, issn 0020-1235Article

Forum nouvelles Technologies et Handicap1999, 52 p., isbn 2-913-15709-2Book

Enhancement of CMOS performance by process-induced stress : Materials-related manufacturing issues in the nanochip eraYUHAO LUO; NAYAK, Deepak K.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 1, pp 63-68, issn 0894-6507, 6 p.Article

A high-performance bipolar/CMOS process―CIT2VOLZ, C; BLOSSFELD, L.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1861-1865, issn 0018-9383, 1Article

Les technologies de l'information et de la communication au service d'une sécurité sociale novatricePERSPECTIVES EN POLITIQUE SOCIALE. 2012, Num 23, 5 p.Serial Issue

Le Centre de Hautes Etudes du Pacifique: présentation de son «outil de technologie avancée» mis au point à l'occasion de l'exposition «sillages polynésiens» par le C.I.D = Centre of Pacific High Studies: presentation of its advanced technology tool perfecting on the occasion of the «sillages polynesiens» exposureL' Informatique documentaire (Paris). 1985, Num 18, pp 61-63, issn 0249-3381Article

Valorisation de la recherche en sciences et technologies de l'information et des communications (STIC) pour la santé et l'autonomie : rapport finalPICARD, Robert; DUCHENE, Jacques; VIGOUROUX, Nadine et al.2010, 2 p.Book

Digital Foundations: The Making of Silicon-Gate Manufacturing Technology = Les fondements du numérique: la création de la technologie grille siliciumBROCK, David C; LECUYER, Christophe.Technology and culture. 2012, Vol 53, Num 3, pp 561-597, issn 0040-165X, 37 p.Article

Influence of device parameters on the switching speed of BICMOS buffersPOSSEEL, G. P; DUTTON, R. W.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 90-99, issn 0018-9200, 10 p.Article

CMOS dual-work-function engineering by using implanted Ni-FUSILIN, Chien-Ting; RAMIN, Manfred; PAS, Michael et al.IEEE electron device letters. 2007, Vol 28, Num 9, pp 831-833, issn 0741-3106, 3 p.Article

A new dummy-free shallow trench isolation concept for mixed-signal applicationsBADENES, G; ROOYACKERS, R; AUGENDRE, E et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3827-3832, issn 0013-4651Article

TIC, grands-parents et leurs petits-enfants : vers un conflit des générations technologiques ?LE DOUARIN, L.Vivre les âges de la vie. De l'adolescence au grand âge. 2012, pp 253-276, isbn 978-2-296-96212-5, 24 p.Book Chapter

Méthodologie d'intégration des Nouvelles Technologies dans le projet de l'Association2000, 28 p., isbn 2-913-15730-0Book

An input-free NMOS V_T extractor circuit in presence of body effectsSENGUPTA, S.IEEE International Symposium on Circuits and Systems. 2004, pp 912-915, isbn 0-7803-8251-X, 4 p.Conference Paper

Understanding stress enhanced performance in intel 90nm CMOS technologyGILES, M. D; ARMSTRONG, M; OBRADOVIC, B et al.Symposium on VLSI Technology. sd, pp 118-119, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Quel service médical rendu aux patients par la Mobile Health ?SIMON, Pierre.Revue hospitalière de France (Paris). 2013, Num 551, pp 30-34, issn 0397-4626, 5 p.Article

Le futur commence aujourd'huiLONGERICH, Brigitte.Krankenpflege. 2013, Num 10, pp 66-68, issn 0253-0465, 3 p.Article

A participatory program evaluation of a systems change program to improve access to information technology by people with disabilities = Evaluation d'un programme participatif dans l'amélioration de l'accès des personnes handicapées aux nouvelles technologies d'informationMIRZA, Mansha; ANANDAN, Navaraj; MADNICK, Francs et al.Disability and rehabilitation. 2006, Vol 28, Num 19, pp 1185-1199, issn 0963-8288, 15 p.Article

Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress EffectSU, V. C; LIN, I. S; KUO, J. B et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 612-614, issn 0741-3106, 3 p.Article

Physical modeling and alleviation of shallow-trench-isolation charging effects in silicon-on-insulator complementary bipolar technologyYINDEEPOL, Wipawan; FOOTE, Richard; DE SANTIS, Joseph et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 40-43, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

STI-to-gate distance effects on flicker noise characteristics in 0.13 μm CMOSCHAN, Chih-Yuan; HUANG, Yen-Chun; CHEN, Jun-Wei et al.Solid-state electronics. 2008, Vol 52, Num 8, pp 1182-1187, issn 0038-1101, 6 p.Article

A novel low cost 65nm CMOS process architecture with self aligned isolation and W cladded source/drainBLOSSE, A; RAMKUMAR, K; GOPALAN, P et al.International Electron Devices Meeting. 2004, pp 669-672, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A 0.25μm CMOS based 70V smart power technology with deep trench for high-voltage isolationPARTHASARATHY, V; ZHU, R; PUCHADES, I et al.IEDm : international electron devices meeting. 2002, pp 459-462, isbn 0-7803-7462-2, 4 p.Conference Paper