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Failure mechanisms in advanced BCD technology during reliability qualificationVAN HASSEL, J. G; BOCK, G. A. D; VAN DEN BERG, G et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1697-1700, issn 0026-2714, 4 p.Conference Paper

People and technology : Matching technology to peopleSETON, J; HOLLIER, M. P; STENTIFORD, F. W et al.BT technology journal. 1999, Vol 17, Num 1, pp 11-14, issn 1358-3948Article

Vernieuwing in de civielo techniek in verleden en heden = Innovations dans le génie civil depuis la dernière guerre mondiale = Innovations in civil engineering since the last world warVANDEPITTE, D.Het ingenieursblad. 1989, Vol 58, Num 4, pp 35-39, issn 0020-1235Article

Two-dimensional analysis of a merged BiPMOS deviceKUO, J. B; ROSSEEL, G. P; DUTTON, R. W et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 8, pp 929-932, issn 0278-0070Article

Forum nouvelles Technologies et Handicap1999, 52 p., isbn 2-913-15709-2Book

Enhancement of CMOS performance by process-induced stress : Materials-related manufacturing issues in the nanochip eraYUHAO LUO; NAYAK, Deepak K.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 1, pp 63-68, issn 0894-6507, 6 p.Article

A high-performance bipolar/CMOS process―CIT2VOLZ, C; BLOSSFELD, L.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1861-1865, issn 0018-9383, 1Article

Design and characterization of high-voltage NMOS and PMOS devices in standard 0.25 μm CMOS technologyXIAOLIANG HAN; CHIHAO XU.Microelectronics journal. 2007, Vol 38, Num 10-11, pp 1038-1041, issn 0959-8324, 4 p.Article

Les technologies de l'information et de la communication au service d'une sécurité sociale novatricePERSPECTIVES EN POLITIQUE SOCIALE. 2012, Num 23, 5 p.Serial Issue

Le Centre de Hautes Etudes du Pacifique: présentation de son «outil de technologie avancée» mis au point à l'occasion de l'exposition «sillages polynésiens» par le C.I.D = Centre of Pacific High Studies: presentation of its advanced technology tool perfecting on the occasion of the «sillages polynesiens» exposureL' Informatique documentaire (Paris). 1985, Num 18, pp 61-63, issn 0249-3381Article

Valorisation de la recherche en sciences et technologies de l'information et des communications (STIC) pour la santé et l'autonomie : rapport finalPICARD, Robert; DUCHENE, Jacques; VIGOUROUX, Nadine et al.2010, 2 p.Book

Circuit modeling of bipolar transistors for BiCMOSDOYLE, D. J. F; LANE, W. A.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 189-193, issn 0018-9200, 5 p.Article

Digital Foundations: The Making of Silicon-Gate Manufacturing Technology = Les fondements du numérique: la création de la technologie grille siliciumBROCK, David C; LECUYER, Christophe.Technology and culture. 2012, Vol 53, Num 3, pp 561-597, issn 0040-165X, 37 p.Article

Influence of device parameters on the switching speed of BICMOS buffersPOSSEEL, G. P; DUTTON, R. W.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 90-99, issn 0018-9200, 10 p.Article

Special Issue: ICT Development and Use in EuropeWILLIAMS, Robin.The Information society. 2000, Vol 16, Num 4, pp 251-328, issn 0197-2243Serial Issue

CMOS dual-work-function engineering by using implanted Ni-FUSILIN, Chien-Ting; RAMIN, Manfred; PAS, Michael et al.IEEE electron device letters. 2007, Vol 28, Num 9, pp 831-833, issn 0741-3106, 3 p.Article

A new dummy-free shallow trench isolation concept for mixed-signal applicationsBADENES, G; ROOYACKERS, R; AUGENDRE, E et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3827-3832, issn 0013-4651Article

TIC, grands-parents et leurs petits-enfants : vers un conflit des générations technologiques ?LE DOUARIN, L.Vivre les âges de la vie. De l'adolescence au grand âge. 2012, pp 253-276, isbn 978-2-296-96212-5, 24 p.Book Chapter

Méthodologie d'intégration des Nouvelles Technologies dans le projet de l'Association2000, 28 p., isbn 2-913-15730-0Book

An input-free NMOS VT extractor circuit in presence of body effectsSENGUPTA, S.IEEE International Symposium on Circuits and Systems. 2004, pp 912-915, isbn 0-7803-8251-X, 4 p.Conference Paper

Understanding stress enhanced performance in intel 90nm CMOS technologyGILES, M. D; ARMSTRONG, M; OBRADOVIC, B et al.Symposium on VLSI Technology. sd, pp 118-119, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

La télémédecineDEBOST, Claire.REVUE DROIT ET SANTE. 2011, Num 42, pp 466-470, issn 1769-1036, 5 p.Article

L'impact des nouvelles technologies sur la conception architecturale des hôpitauxBERNFELD, Guy.CAHIERS HOSPITALIERS. 2001, Num 173, pp 30-32, issn 0295-4591Article

Increased current gain and suppression of peripheral base currents in silicided self-aligned narrow width polysilicon-emitter transistors of an advanced BiCMOS technologyEL-DIWANY, M. H; BRASSINGTON, M. P; TUNTASOOD, P et al.IEEE electron device letters. 1988, Vol 9, Num 5, pp 247-249, issn 0741-3106Article

Advanced bipolar and CMOS masterslicesYANO, T; MIYAHARA, N; HORIGUCHI, S et al.Review of the electrical communication laboratories. 1986, Vol 34, Num 6, pp 711-718, issn 0029-067XArticle

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