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Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devicesSEVERI, S; ANIL, K. G; CAMILLE-CASTILLO, R. A et al.International Electron Devices Meeting. 2004, pp 99-102, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectricsTSUJIKAWA, Shimpei; YUGAMI, Jiro.Microelectronics and reliability. 2005, Vol 45, Num 1, pp 65-69, issn 0026-2714, 5 p.Article

A PMOSFET ESD failure caused by localized charge injectionCHUN, Jung-Hoon; DUVVURY, Charvaka; BOSELLI, Gianluca et al.IEEE international reliability physics symposium. 2004, pp 405-411, isbn 0-7803-8315-X, 1Vol, 7 p.Conference Paper

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Symmetrical 45nm PMOS on (110) substrate with excellent S/D extension distribution and mobility enhancementHWANG, J. R; HO, J. H; LIN, H. S et al.Symposium on VLSI Technology. sd, pp 90-91, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Impact ionisation in strained SiGe pMOSFETsNICHOLAS, G; DOBBIE, A; GRASBY, T. J et al.Electronics Letters. 2005, Vol 41, Num 16, pp 925-927, issn 0013-5194, 3 p.Article

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

CMOS dual-work-function engineering by using implanted Ni-FUSILIN, Chien-Ting; RAMIN, Manfred; PAS, Michael et al.IEEE electron device letters. 2007, Vol 28, Num 9, pp 831-833, issn 0741-3106, 3 p.Article

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO₂/Pt and HfO₂/Hf systemsSAYAN, S; BARTYNSKI, R. A; GARFUNKEL, E et al.Proceedings - Electrochemical Society. 2004, pp 255-263, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

An input-free NMOS V_T extractor circuit in presence of body effectsSENGUPTA, S.IEEE International Symposium on Circuits and Systems. 2004, pp 912-915, isbn 0-7803-8251-X, 4 p.Conference Paper

Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistorsHUARD, V; DENAIS, M.IEEE international reliability physics symposium. 2004, pp 40-45, isbn 0-7803-8315-X, 1Vol, 6 p.Conference Paper

Understanding stress enhanced performance in intel 90nm CMOS technologyGILES, M. D; ARMSTRONG, M; OBRADOVIC, B et al.Symposium on VLSI Technology. sd, pp 118-119, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Optimization of gate poly TAB size and reliability on short channel pMOSFETSEOK, Jung-Eun; KIM, Hyun-Joo; SEO, Jae-Yong et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1185-1188, issn 0026-2714, 4 p.Conference Paper

Dynamic NBTI lifetime model for inverter-like waveformSHYUE SENG TAN; TU PEI CHEN; CHAN, Lap et al.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1115-1118, issn 0026-2714, 4 p.Article

A test chip to characterise P-MOS transistors produced using a novel organometallic materialDICKS, M. H; BROXTON, G. M; THOMSON, J et al.2004 international conference on microelectronic test structures. 2004, pp 183-187, isbn 0-7803-8262-5, 1Vol, 5 p.Conference Paper

Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETsCHEN, William P. N; KUO, Jack J. Y; PIN SU et al.IEEE electron device letters. 2011, Vol 32, Num 2, pp 113-115, issn 0741-3106, 3 p.Article

Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETsALAGI, F.Microelectronics and reliability. 2011, Vol 51, Num 8, pp 1283-1288, issn 0026-2714, 6 p.Article

Tunable microcantilever sensors with embedded piezotransistorsSINGH, P; MIAO, J; SHAO, L et al.Electronics letters. 2010, Vol 46, Num 23, pp 1557-1559, issn 0013-5194, 3 p.Article

PMOSFET anti-fuse using GIDL-induced-HEIP mechanismSEO, J. Y; SEOK, J. E; KIM, W. S et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1309-1311, issn 0026-2714, 3 p.Conference Paper

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETsPOUYDEBASQUE, Arnaud; ROMANJEK, Krunoslav; LE ROYER, Cyrille et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3240-3244, issn 0018-9383, 5 p.Article

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS TechnologyENEMAN, Geert; DE JAEGER, Brice; SIMOEN, Eddy et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3115-3122, issn 0018-9383, 8 p.Article

Linear-logarithmic image sensor with low noise and no flickersMIYATAKE, Shigehiro; KUSUDA, Masayuki; IWAMOTO, Tsuyoshi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 65010I.1-65010I.11, issn 0277-786X, isbn 978-0-8194-6614-3Conference Paper

Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regionsNOULIS, T; SISKOS, S; SARRABAYROUSE, G et al.Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1222-1227, issn 0026-2714, 6 p.Article

Sub-1-V supply self-adaptive CMOS image sensor cell with 86-dB dynamic rangeLEE, Sungsik; YANG, Kyounghoon.IEEE electron device letters. 2007, Vol 28, Num 6, pp 492-494, issn 0741-3106, 3 p.Article