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kw.\*:("Tecnología SIMOX")

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Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beamsUEDONO, A; YAMAMOTO, H; NAKANO, A et al.IEEE International SOI conference. 2002, pp 196-197, isbn 0-7803-7439-8, 2 p.Conference Paper

Evaluation of surface defects on SIMOX and their influences on device characteristicsNARUOKA, H; IWAMATSU, T; TANAKA, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 40-44, issn 0022-0248Conference Paper

Ellipsometric analysis of ultrathin oxide layers on SIMOX wafersMOTOOKA, T; KUSANO, Y; NISIHIRA, K et al.Applied surface science. 2000, Vol 159-60, pp 111-115, issn 0169-4332Conference Paper

Formation of ultra-thin SOI by dose-energy optimizationMENG CHEN; XIANG WANG; YEMING DONG et al.IEEE International SOI conference. 2002, pp 113-114, isbn 0-7803-7439-8, 2 p.Conference Paper

Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applicationsALLEN, R. A; GHOSHTAGORE, R. N; CRESSWELL, M. W et al.SPIE proceedings series. 1998, pp 124-131, isbn 0-8194-2777-2Conference Paper

Recent developments in electrical linewidth and overlay metrology for integrated circuit fabrication processesCRESSWELL, M. W; SNIEGOWSKI, J. J; GHOSHTAGORE, R. N et al.Japanese journal of applied physics. 1996, Vol 35, Num 12B, pp 6597-6609, issn 0021-4922, 1Conference Paper

Low-loss optical waveguide on standard SOI/SIMOX substrateLAYADI, A; VONSOVICI, A; OROBTCHOUK, R et al.Optics communications. 1998, Vol 146, Num 1-6, pp 31-33, issn 0030-4018Article

Low defect density and planar patterned SOI materials by masked SIMOXYEMIN DONG; XI WANG; XIANG WANG et al.Chemical physics letters. 2003, Vol 378, Num 5-6, pp 470-473, issn 0009-2614, 4 p.Article

Status of 300 mm SOI material: Comparisons with 200 mmHOVEL, H; ALMONTE, M; BETTINGER, J et al.Proceedings - Electrochemical Society. 2003, pp 75-80, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

300 mm ultra-thin advantox<TM> MLD SIMOX wafers manufactured using i2000 oxygen implanterBLAKE, J; DEMPSEY, K; DOLAN, R et al.IEEE International SOI conference. 2002, pp 109-110, isbn 0-7803-7439-8, 2 p.Conference Paper

Evaluation of buried oxide formation in low-dose SIMOX processOGURA, A; ONO, H.Applied surface science. 2000, Vol 159-60, pp 104-110, issn 0169-4332Conference Paper

Surface particle analysis of SIMOX (Separation by IMplanted OXygen) wafersKAJIYAMA, K; OHTSUKA, S; MORIKAWA, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp 5937-5941, issn 0021-4922, 1Article

Comparison of {311} defect evolution in SIMOX and bonded SOI materialsSAAVEDRA, A. F; JONES, K. S; LAW, M. E et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 4, pp G266-G270, issn 0013-4651Article

Ionic synthesis of silica-based glasses: prospect, simulation, applied aspectsKRIVELEVICH, Sergey A; DENISENKO, Yuri I; TSYRULEV, Andrey A et al.SPIE proceedings series. 2004, pp 119-128, isbn 0-8194-5324-2, 10 p.Conference Paper

Quasi-TE00 singlemode optical waveguides for electro-optical modulation at 1.3 μm using standard SIMOX materialOROBTCHOUK, R; KOSTER, A; PASCAL, D et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 2, pp 83-86, issn 1350-2433Article

Suppression of parasitic bipolar action and improvement of hot-carrier reliability in fully-depleted metal-oxide-semiconductor field effect transistors on SIMOX (separation by IMplanted Oxygen) introducing recombination centers near source junctionTSUCHIYA, T; OHNO, T; TAZAWA, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 10, pp 6175-6180, issn 0021-4922, 1Article

On electron conduction and trapping in SIMOX dielectricHALL, S; WAINWRIGHT, S. P.Journal of the Electrochemical Society. 1996, Vol 143, Num 10, pp 3354-3358, issn 0013-4651Article

Capacitive pressure sensor with monolithically integrated CMOS readout circuit for high temperature applicationsKASTEN, Klaus; KORDAS, Norbert; KAPPERT, Holger et al.Sensors and actuators. A, Physical. 2002, Vol 97-98, pp 83-87, issn 0924-4247, 5 p.Conference Paper

Single-electron transistors fabricated from a highly doped SOI film : Special Issue on NanotechnologySAKAMOTO, T; KAWAURA, H; BABA, T et al.NEC research & development. 1999, Vol 40, Num 4, pp 397-400, issn 0547-051XArticle

Spectroscopic ellipsometry of SIMOX (separation by implanted oxygen) : Thickness distribution of buried oxide and optical properties of Top-Si layerJAYATISSA, A. H; YAMAGUCHI, T; NASU, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2581-2586, issn 0021-4922, 1Article

Epi-micromachiningFRENCH, P. J; GENNISSEN, P. T. J; SARRO, P. M et al.Microelectronics journal. 1997, Vol 28, Num 4, pp 449-464, issn 0959-8324Article

X-ray topographic contrast of threading dislocations in silicon on insulator structuresPRIEUR, E; OHLER, M; HÄRTWIG, J et al.Physica status solidi. A. Applied research. 1996, Vol 158, Num 1, pp 19-34, issn 0031-8965Article

Sims measurements of dopants in SOI wafersSMITH, Stephen P; WANG, Shaw; ABDELREHIM, Ihab et al.Proceedings - Electrochemical Society. 2005, pp 363-370, issn 0161-6374, isbn 1-56677-461-6, 8 p.Conference Paper

Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection systemOGURA, Atsushi; OKABAYASHI, Osamu.Proceedings - Electrochemical Society. 2003, pp 467-472, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection systemOGURA, Atsushl; OKABAYASHI, Osamu.Proceedings - Electrochemical Society. 2003, pp 19-24, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

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