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The SOI OdysseyHEMMENT, Peter L. F.Proceedings - Electrochemical Society. 2003, pp 1-12, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Selected Full-Length Papers from the EUROSOI 2011 ConferenceGODOY, Andres; GAMIZ, Francisco.Solid-state electronics. 2012, Vol 70, issn 0038-1101, 116 p.Conference Proceedings

Tomography of microstructures by scanning micro-RBS probeKINOMURA, A; TAKAI, M; MATSUO, T et al.Japanese journal of applied physics. 1989, Vol 28, Num 7, pp L1286-L1289, issn 0021-4922, 2Article

Recesseed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistanceAHN, C. G; CHO, W. J; IM, K. J et al.IEEE international SOI conference. 2004, pp 207-208, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Imaging of the SOI interface by high resolution electron microscopyYONG YAN; FUQUAN JI; JUN CHEN et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp K25-K28, issn 0031-8965Article

Improved SOI image sensor design based on backside illumination on silicon-on-sapphire (SOS) substrateCHAO SHEN; CHEN XU; HUANG, R et al.IEEE International SOI conference. 2002, pp 73-74, isbn 0-7803-7439-8, 2 p.Conference Paper

SOI-specific tri-state inverter and its applicationKIM, Jae-Joon; ROY, Kaushik.IEEE International SOI conference. 2002, pp 145-146, isbn 0-7803-7439-8, 2 p.Conference Paper

Increased junction breakdown voltages in silicon-on-insulator diodesHUNG-SHENG CHEN; LI, S. S; FOX, R. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 488-492, issn 0018-9383, 5 p.Article

Selective epitaxial growth in silicon on insulator: planarity and mass flowWILLIAMS, D. A; MCMAHON, R. A; AHMED, H et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3718-3721, issn 0021-8979, 4 p.Article

Half-micrometre-base lateral bipolar transistors made in thin silicon-on-insulator filmsCOLINGE, J.-P.Electronics Letters. 1986, Vol 22, Num 17, pp 886-887, issn 0013-5194Article

Lateral solid phase epitaxy of Si over SiO2 patterns and its application to silicon-on-insulator transistorsSASAKI, M; KATOH, T; ONODA, H et al.Applied physics letters. 1986, Vol 49, Num 7, pp 397-399, issn 0003-6951Article

Characterization of front and back Si-SiO2 interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping techniqueWOUTERS, D. J; TACK, M. R; GROESENEKEN, G. V et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1746-1750, issn 0018-9383, 5 p., 1Article

A new formation process of anodizable structures of n, n+, and n- silicon for the production of silicon-on-insulator structuresXIANG-ZHENG TU.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1530-1532, issn 0734-211XArticle

A lateral silicon-on-insulator bipolar transistor with a self-aligned base contactSTURM, J. C; MCVITTIE, J. P; GIBBONS, J. F et al.IEEE electron device letters. 1987, Vol 8, Num 3, pp 104-106, issn 0741-3106Article

Measurement and modelling of SOI MOSFETs capacitancesTOMASZEWSKI, D; ŁUKASIAK, L; GIBKI, J et al.SPIE proceedings series. 2002, pp 725-728, isbn 0-8194-4500-2, 2VolConference Paper

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO2) dielectric and elevated source/drain extensionsVANDOOREN, A; EGLEY, S; CONNER, J et al.IEEE International SOI conference. 2002, pp 205-206, isbn 0-7803-7439-8, 2 p.Conference Paper

EUROSOI'06 Conference. Selected papersCLERC, Raphaël; FAYNOT, Olivier; KERNEVEZ, Nelly et al.Solid-state electronics. 2007, Vol 51, Num 2, issn 0038-1101, 157 p.Conference Proceedings

Silicon-on-insulator technology and devices XII (Quebec PQ, 15-20 May 2005)Celler, George K; Cristoloveanu, S; Gamiz, F et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-461-6, XI, 395 p, isbn 1-56677-461-6Conference Proceedings

A new structure for in-depth history effect characterization on partially depleted SOI transistorsFAYNOT, O; POIROUX, T; CLUZEL, J et al.IEEE International SOI conference. 2002, pp 35-36, isbn 0-7803-7439-8, 2 p.Conference Paper

Transient charge pumping for partially and fully depleted SOI MOSFETsOKHONIN, S; NAGOGA, M; FAZAN, P et al.IEEE International SOI conference. 2002, pp 171-172, isbn 0-7803-7439-8, 2 p.Conference Paper

Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applicationsXU, X.-L; TONG, Q.-Y.Electronics Letters. 1989, Vol 25, Num 6, pp 394-395, issn 0013-5194, 2 p.Article

A new mathematical model for semiconductor-on-insulator structuresLAI, P. T.Solid-state electronics. 1990, Vol 33, Num 4, pp 441-444, issn 0038-1101, 4 p.Article

Selected Papers from the EUROSOI '08 ConferenceLEDERER, Dimitri; COLINGE, Jean-Pierre.Solid-state electronics. 2008, Vol 52, Num 12, issn 0038-1101, 110 p.Conference Proceedings

Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effectsKUMAR, Anil; NAGUMO, Toshiharu; TSUTSUI, Gen et al.IEEE international SOI conference. 2004, pp 58-59, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

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