Elemental, liquid ammonia facilitated routes to zinc, cadmium, mercury copper, silver and lead tellurideHENSHAW, G; PARKIN, I. P; SHAW, G et al.Journal of materials science letters. 1996, Vol 15, Num 20, pp 1741-1742, issn 0261-8028Article

Physico-chemical investigation of Pb(Ge)Te-Bi₂(Sb₂)Te₃ system ternary compounds formationSKOROPANOV, A. S; VALEVSKY, B. L; SKUMS, V. F et al.Thermochimica acta. 1985, Vol 92, pp 595-598, issn 0040-6031Article

Etude physicochimique du système As2Te3-InTeSAFAROV, M. G.Žurnal neorganičeskoj himii. 1988, Vol 33, Num 2, pp 537-539, issn 0044-457XArticle

Interaction du tellurure d'étain avec les sesquitellurures de gallium et d'indiumBABAEV, YA. N; RUSTAMOV, P. G; GUSEJNOV, V. G et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 12, pp 3171-3173, issn 0044-457XArticle

Transitions de phases dans le système GeTe-Ag2Te-Sb2Te3ABRIKOSOV, N. KH; DIMITROVA, S. K; KARPINSKIJ, O. G et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 11, pp 2931-2935, issn 0044-457XArticle

Cd_1-xMn_xTe/Cd_yHg_1-yTe heterostructures : structure and optical propertiesVLASENKO, A. I; BABENTSOV, V. N; VLASENKO, Z. K et al.SPIE proceedings series. 1998, pp 449-453, isbn 0-8194-2808-6Conference Paper

Electric field fluctuations and bond character in liquid alloysBRINKMANN, R; PAULICK, C. A; ELWENSPOEK, M et al.Physics letters. A. 1985, Vol 111, Num 8-9, pp 435-439, issn 0375-9601Article

Infrared photoluminescence spectra from HgTe-CdTe superlatticesHETZLER, S. R; BAUKUS, J. P; HUNTER, A. T et al.Applied physics letters. 1985, Vol 47, Num 3, pp 260-262, issn 0003-6951Article

Systèmes Sb2Te3-Ln2Te3(Ln=Nd,Sm,Y,Dy)GEJDAROVA, EH. A; RUSTAMOV, P. G.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 11, pp 2992-2994, issn 0044-457XArticle

Distribution of zinc in CdZnTe crystalsRADHAKRISHNAN, J. K; RAMAN, R; NARULA, R. C et al.SPIE proceedings series. 1998, pp 818-821, isbn 0-8194-2756-X, 2VolConference Paper

Etude physicochimique du système Bi2Te3-Tm2Te3 et propriétés des phases qui se formentSADYGOV, F. M; ABILOV, CH. I; RUSTAMOV, P. G et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 12, pp 3177-3180, issn 0044-457XArticle

Système SMTe-Ga2Te3ALIEV, O. M; ALIEVA, O. A; RUSTAMOV, P. G et al.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 10, pp 2714-2717, issn 0044-457XArticle

Etude de l'interaction du tellurure de chrome Cr2Te3 avec Cu2Te et CuInTe2BABITSINA, A. A; EMEL'YANOVA, T. A.Žurnal neorganičeskoj himii. 1985, Vol 30, Num 10, pp 2730-2732, issn 0044-457XArticle

An investigation of CdTe and CdZnTe substrates and MCT epitaxial layers using ellipsometrySHARMA, B. L; SITHARAMAN, S; NAGPAL, A et al.SPIE proceedings series. 1998, pp 829-832, isbn 0-8194-2756-X, 2VolConference Paper

Defects in ZnTe, CdTe, and HgTe: total energy calculationsBERDING, M. A; VAN SCHILFGAARDE, M; PAXTON, A. T et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1103-1107, issn 0734-2101Article

Solidification of supercooled tellurium-based meltsPSAREV, V. I.Inorganic materials. 1995, Vol 31, Num 11, pp 1334-1338, issn 0020-1685Article

Electronic properties of liquid Cu-Te, Ag-Te, Au-Te and Pd-Te binary alloysOKADA, T; KAKINUMA, F; OHNO, S et al.Journal of the Physical Society of Japan. 1983, Vol 52, Num 10, pp 3526-3535, issn 0031-9015Article

Influence des tellurures de cadmium et d'étain sur les propriétés électriques et physiques de Bi2Te3 et Sb2Te3SHER, A. A; ODIN, I. N; NOVOSELOVA, A. V et al.Izvestiâ Akademii nauk SSSR. Mehanika židkosti i gaza. 1984, Num 4, pp 1327-1330, issn 0568-5281Article

Anomalous overvoltage dependence of the switching time of ultrafast switches made of amorphous semiconductorsBAL'CHYUNAS, V; BALYAVICHYUS, S; CHENIS, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 5, pp 495-498, issn 0038-5700Article

Growth and properties of HgTe-CdTe and other Hg-based superlatticesFAURIE, J.-P.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1656-1665, issn 0018-9197Article

Structural transformations in thin amorphous semiconductor films induced by electrical nanosecond switchingBALEVIČIUS, S; DEKSNYS, A; JASUTIS, V et al.Thin solid films. 1984, Vol 112, Num 1, pp 75-80, issn 0040-6090Article

CZT Smart Dicing Strategy for Cost Reduction Using Defect Imaging and Random-Access MachiningTKACZYK, J. Eric; ANDREINI, Kristian; TAN ZHANG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7806, issn 0277-786X, isbn 978-0-8194-8302-7, 78060L.1-78060L.10Conference Paper

Unseeded growth of CdZnTe:In by THM techniqueROY, Utpal N; WEILER, Stephen; STEIN, Juergen et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7449, issn 0277-786X, isbn 978-0-8194-7739-2 0-8194-7739-7, 1Vol, 74490U.1-74490U.5Conference Paper

Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTeYI GAO SHA; BREBRICK, R. F.Journal of electronic materials. 1989, Vol 18, Num 3, pp 421-443, issn 0361-5235, 23 p.Article

Solutions solides hétérovalentes à base de chalcogénures de mercureGRUSHKA, G. G; GAVALESHKO, N. P; GERASIMENKO, V. S et al.Žurnal neorganičeskoj himii. 1988, Vol 33, Num 2, pp 534-537, issn 0044-457XArticle