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kw.\*:("Tellurium Alloys")

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Results 1 to 25 of 216

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Electrophotographic properties of Se-Te-Sb-halogen alloyONOZUKA, A; ODA, O.Journal of non-crystalline solids. 1988, Vol 103, Num 2-3, pp 289-294, issn 0022-3093Article

Thermochemistry of transition metal tellurides of interest in nuclear technologyMATHEWS, C. K.Journal of nuclear materials. 1993, Vol 201, pp 99-107, issn 0022-3115Conference Paper

Low field transport sutdies of HgTe/CdTe superlattices : quantum interference effectsGHENIM, L; MANI, R. G; ANDERSON, J. R et al.Solid state communications. 1990, Vol 75, Num 4, pp 341-344, issn 0038-1098Article

Use of Au/Te/Ni films for ohmic contact to GaAsGHOSH, C; YENIGALLA, P; ATKINS, K et al.IEEE electron device letters. 1983, Vol 4, Num 9, pp 301-302, issn 0741-3106Article

Statistical model for phases with NiAs-type and closely related structuresKRACHLER, R.Journal of alloys and compounds. 1993, Vol 200, pp 1-15, issn 0925-8388Article

ROOM TEMPERATURE INTERACTIONS IN TE/METAL THIN FILM COUPLESMARINKOVIC Z; SIMIC V.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 82; NO 2; PP. 195-200; BIBL. 6 REF.Article

Chemical alloying, a novel method for the preparation of homogeneous SexTe1-x alloysSMITH, T. W; SMITH, S. D; BADESHA, S. S et al.Journal of the American Chemical Society. 1984, Vol 106, Num 23, pp 7247-7248, issn 0002-7863Article

Thermoelectricity generation using Bi-Te alloys: a low temperature prototypeDISPENZA, C; GIACONIA, C; PIGNATO, L et al.Journal of heat recovery systems. 1986, Vol 6, Num 4, pp 285-293, issn 0198-7593Article

NEUARTIGE SI4TE108- UND GE4TE108--SNIONEN IM NA8SI4TE10 BZW. NA8GE4TE10 = NOUVEAUX ANIONS SI4TE108- ET GE4TE108- ANDS NA8SI4TE10 ET NA8GE4TE10EISENMANN B; SCHWERER H; SCHAEFER H et al.1983; REVUE DE CHIMIE MINERALE; ISSN 0035-1032; FRA; DA. 1983; VOL. 20; NO 1; PP. 78-87; ABS. ENG/FRE; BIBL. 9 REF.Article

Measurement on ablative hole formation process in thin tellurium-selenium alloy filmsLOU, D. Y; BLOM, G. M.Journal of applied physics. 1983, Vol 54, Num 11, pp 6637-6640, issn 0021-8979Article

Conditions for the deposition of CdTe by electrochemical atomic layer epitaxyGREGORY, B. W; WAYNE SUGGS, D; STICKNEY, J. L et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 5, pp 1279-1284, issn 0013-4651Article

Hole formation in tellurium alloy films during optical recordingBLOM, G. M.Journal of applied physics. 1983, Vol 54, Num 11, pp 6175-6182, issn 0021-8979Article

Mechanism of laser writing for optical data storage in an overcoated tellurium alloy trilayerHOLSTEIN, W. L; BEGNOCHE, B. C.Journal of applied physics. 1986, Vol 60, Num 8, pp 2938-3943, issn 0021-8979Article

Hydrogen destruction of thermoelectrical materials under water electrolysisKORZHUEV, M. A; SVECHNIKOVA, T. E; MILYKH, A. N et al.Fizika i himiâ obrabotki materialov. 1992, Num 2, pp 153-155, issn 0015-3214Article

Activity measurement of Zn in ZnTe-CdTe solid solutions by EMF methodKATAYAMA, I; INOMOTO, T; KOZUKA, Z et al.Materials transactions - JIM. 1991, Vol 32, Num 2, pp 169-173, issn 0916-1821Article

Magnetization and susceptibility of Pb1-xEuxTeGORSKA, M; ANDERSON, J. R; KIDO, G et al.Solid state communications. 1990, Vol 75, Num 4, pp 363-369, issn 0038-1098Article

The stability of thin tellurium and tellurium alloy films for optical data storage. IIWEN-YAUNG LEE.Thin solid films. 1983, Vol 108, Num 3, pp 353-363, issn 0040-6090Article

Positron lifetime and hole concentration in P-type Hg0.78Cd0.22Te crystalsGELY-SIKES, C; CORBEL, C; TRIBOULET, R et al.Annales de chimie (Paris. 1914). 1991, Vol 16, Num 7, pp 541-546, issn 0151-9107Article

Phase diagram of Cd2x(Culn)yMn2zTe2 (x + y + z = 1) alloysQUINTERO, M; GUERRERO, E; TOVAR, R et al.Journal of solid state chemistry (Print). 1990, Vol 87, Num 2, pp 456-462, issn 0022-4596, 7 p.Article

Physicochemical and optical properties of alloys in the PbTe-Cr systemsABILOV, C. I; VELIEVA, S. A.Russian journal of inorganic chemistry. 1990, Vol 35, Num 8, pp 1223-1224, issn 0036-0236, 2 p.Article

Thermokinetic investigation of solid : vapour reaction application to the Ag-Te systemHEDIBEL, M; COULET, A; CASTANET, R et al.Zeitschrift für Metallkunde. 1990, Vol 81, Num 12, pp 919-922, issn 0044-3093Article

The electron pseudocharge densities in ZnxHg(1-x)TeAOURAG, H; HAMMADI, M; MAHMOUDI, M et al.Materials chemistry and physics. 1992, Vol 31, Num 4, pp 359-364, issn 0254-0584Article

Physico-chemical characterization of molybdenum dichalcogenide thin filmsBERNEDE, J. C; MANAI, N; POUZET, J et al.Materials chemistry and physics. 1991, Vol 28, Num 4, pp 347-354, issn 0254-0584Article

Archival life of tellurium-based materials for optical recordingBLOM, G. M; LOU, D. Y.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 146-151, issn 0013-4651Article

A general optical characterization method for determining the composition of Hg1-xCdxTe samplesVISHNU GOPAL; ASHOKAN, R; GUPTA, A. K et al.Infrared physics. 1993, Vol 34, Num 1, pp 83-87, issn 0020-0891Article

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