Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Tension bande plate")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 617

  • Page / 25
Export

Selection :

  • and

Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structuresVASQUEZ, R. P; MADHUKAR, A.Applied physics letters. 1985, Vol 47, Num 9, pp 998-1000, issn 0003-6951Article

Pulse technique for flat-band voltage measurements in MIS structuresBAGINSKI, I. L; KOSTSOV, E. G; MEERSON, E. E et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K99-K102, issn 0031-8965Article

Flatband potential determination and surface modifications at semiconductor-liquid jonctionsALLONGUE, P; CACHET, H.Solid state communications. 1985, Vol 55, Num 1, pp 49-53, issn 0038-1098Article

Conduction properties of silicon dioxide in oxide-nitride-oxide structuresMANZINI, S; QUEIROLO, G.Solid-state electronics. 1987, Vol 30, Num 6, pp 587-591, issn 0038-1101Article

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article

On the flat-band voltage of MOS structures on nonuniformly doped substratesVAN DE WIELE, F.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 824-826, issn 0038-1101Article

Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structuresACKELID, U; ARMGARTH, M; SPETZ, A et al.IEEE electron device letters. 1986, Vol 7, Num 6, pp 353-355, issn 0741-3106Article

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2KRUSIN-ELBAUM, L; SAI-HALASZ, G. A.Applied physics letters. 1986, Vol 48, Num 2, pp 177-179, issn 0003-6951Article

Capacité d'interface et potentiel de bandes plates de CdIn2Se4 et CdCr2Se4 = Interface capacity and flat-band potential of CdIn2Se4 and CdCr2Se4SAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 2, pp 145-152, issn 0151-9107Article

Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) filmsCHEN, C.-T; TSENG, F.-C; CHANG, C.-Y et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 875-877, issn 0013-4651Article

INFLUENCE OF A FLATBAND-VOLTAGE VARIATION ALONG THE CHANNEL ON THE DRAIN CHARACTERISTICS OF A TFT.BURGELMAN M; PAUWELS HJ.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 459-461; BIBL. 12 REF.Article

HYDROGEN SENSITIVE MOS STRUCTURES.LUNDSTROEM I; SHIVARAMAN MS; SVENSSON C et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 631-634; BIBL. 9 REF.Conference Paper

RAPID AND PRECISE MEASUREMENT OF FLATBAND VOLTAGE.LI SP; RYAN M; BATES ET et al.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 632-634; BIBL. 1 REF.Article

DIRECT MEASUREMENT OF FLAT-BAND VOLTAGE IN MOS BY INFRARED EXCITATIONYUN BH.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 5; PP. 194-195; BIBL. 3 REF.Serial Issue

Photoelectrochemical processes in bismuth germanium oxide, Bi12GeO20 single crystalsKOCHEV, K; TZVETKOVA, K; GOSPODINOV, M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 330-332, issn 0013-4651Article

Detection of Supported Lipid Bilayers Using Their Electric ChargeKATAOKA-HAMAI, Chiho; INOUE, Hiromi; MIYAHARA, Yuji et al.Langmuir. 2008, Vol 24, Num 17, pp 9916-9920, issn 0743-7463, 5 p.Article

Flat-band voltage control of a back-gate MOSFET by single ion implantationSHINADA, T; ISHIKAWA, A; HINOSHITA, C et al.Applied surface science. 2000, Vol 162-63, pp 499-503, issn 0169-4332Conference Paper

Ionizing radiation effects in MOS capacitors with very thin gate oxidesSHIONO, N; SHIMAYA, M; SANO, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp 1430-1435, issn 0021-4922Article

Mise au point. Principes de base de l'électrochimie des semiconducteurs = Basic principles of semiconductor electrochemistry (Review)GUYOMARD, D.Journal de chimie physique. 1986, Vol 83, Num 6, pp 355-391, issn 0021-7689Article

Determination of the Si-conducting polymer interfacial properties using A-C impedance techniquesNAGASUBRAMANIAN, G; DI STEFANO, S; MOACANIN, J et al.Journal of electronic materials. 1986, Vol 15, Num 1, pp 21-25, issn 0361-5235Article

Electrical properties of amorphous tantalum pentoxide thin films on siliconOEHRLEIN, G. S; REISMAN, A.Journal of applied physics. 1983, Vol 54, Num 11, pp 6502-6508, issn 0021-8979Article

Hydrogen annealing of transparent gate MOS diodesTAKATO, H; ISHII, K; HAYASHI, Y et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp L1984-L1986, issn 0021-4922, 2Article

Flat band potential of As-grown n-MoSe2 single crystal electrodesSRIVASTAVA, R; PATHAK, V. M; RAO, V. V et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp 293-299, issn 0031-8965Article

Photoelectrochemical measurements on thermally grown platinum containing iron oxide photoanodesJOHN, M. R. S; TILLER, A. J; COOK, R. L et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 8, pp 1859-1864, issn 0013-4651Article

A method of making oxynitrides by interface nitridation through siliconSUIZU, Yasumasa; FUKUMOTO, Masato; OZAWA, Yoshio et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 4, pp F51-F55, issn 0013-4651Article

  • Page / 25