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Results 1 to 25 of 3306

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Stabilized biasing of semiconductor lasersSWARTZ, R. G; WOOLEY, B. A.The Bell System technical journal. 1983, Vol 62, Num 7, pp 1923-1936, issn 0005-8580Article

On the performance of a microchannel plate detector used for atom-probe analysisLUNDIN, L; ROLANDER, U.Applied surface science. 1993, Vol 67, Num 1-4, pp 459-466, issn 0169-4332Conference Paper

Comments on «theory and measurement of back bias voltage in IMPATT diodes»TINARI, S. C.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 1, pp 72-74, issn 0018-9480Article

On a Model of Nanoparticle Collection by an Electrical ProbeKEIDAR, Michael; BEILIS, Isak I.IEEE transactions on plasma science. 2010, Vol 38, Num 11, pp 3249-3251, issn 0093-3813, 3 p., 2Article

Influence of the frequency of a periodic biasing voltage upon the etching of polymersBOUNASRI, F; MOISAN, M; SAUVE, G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1859-1867, issn 1071-1023Conference Paper

Pressure-Controlled Motion of Single Polymers through Solid-State NanoporesBO LU; HOOGERHEIDE, David P; QING ZHAO et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3048-3052, issn 1530-6984, 5 p.Article

Theory and measurement of back bias voltage in IMPATT diodesHOLWAY, L. H. JR; CHU, S. L. G.IEEE transactions on microwave theory and techniques. 1983, Vol 31, Num 11, pp 916-922, issn 0018-9480Article

Mixed body-bias techniques with fixed V1 and Idsgeneration circuitsSUMITA, Masaya; SAKIYAMA, Shiro; KINOSHITA, Masayoshi et al.IEEE International Solid-State Circuits Conference. 2004, pp 158-159, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Structure and properties of TiAlLaN films deposited at various bias voltagesHAO DU; JI XIONG; HAIBO ZHAO et al.Applied surface science. 2014, Vol 292, pp 688-694, issn 0169-4332, 7 p.Article

Andreev-reflected wave packets in voltage-biased superconducting quantum wellsKÜMMEL, R; SENFTINGER, W.Zeitschrift für Physik. B, Condensed matter. 1985, Vol 59, Num 3, pp 275-281, issn 0722-3277Article

Transport in disordered monolayer MoS2 nanoflakes―evidence for inhomogeneous charge transportLO, Shun-Tsung; KLOCHAN, O; LIU, C.-H et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 37, issn 0957-4484, 375201.1-375201.8Article

Influence of a bias voltage on surface-driven orientational transitions for liquid crystal-based chemical and biological sensorsYANG ZOU; JUN NAMKUNG; YONGBIN LIN et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 13, issn 0022-3727, 135103.1-135103.7Article

The effect of bias voltage and working pressure on S/Mo ratio at MoS-Ti composite filmsBÜLBÜL, F; EFEOGLU, I; ARSLAN, E et al.Applied surface science. 2007, Vol 253, Num 9, pp 4415-4419, issn 0169-4332, 5 p.Article

Effect of bias on neutron detection in thin semiconducting boron carbide filmsDAY, E; DIAZ, M. J; ADENWALLA, S et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 14, pp 2920-2924, issn 0022-3727, 5 p.Article

Transport and magnetotransport transition of thin Co films grown on SiDE CARVALHO, H. B; BRASIL, M. J. S. P; DENARDIN, J. C et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 10, pp 2361-2365, issn 0031-8965, 5 p.Conference Paper

DC bias dependence of piezoelectric properties of <111> oriented Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystalsLIU, S-F; REN, W; MUKHERJEE, B. K et al.Proceedings - IEEE International Symposium on Applications of Ferroelectrics. 2002, pp 427-430, issn 1099-4734, isbn 0-7803-7414-2, 4 p.Conference Paper

General considerations for interpreting junction capacitance in complex systemsJENG-JYE SHIAU; BUBE, R. H.Solid-state electronics. 1986, Vol 29, Num 11, pp 1153-1160, issn 0038-1101Article

Photo-enhanced etching of n-SiHOFFMANN, H. J; WOODALL, J. M.Applied physics. A, Solids and surfaces. 1984, Vol 33, Num 4, pp 243-245, issn 0721-7250Article

Bias-field effect on the temperature anomalies of dielectric permittivity in PbMg1/3Nb2/3O3 -PbTiO3 single crystalsRAEVSKI, I. P; PROSANDEEV, S. A; JASTRABIK, L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 18, pp 184104.1-184104.8, issn 1098-0121Article

Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodesGANGULY, Swaroop; REGISTER, L. F; BANERJEE, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 24, pp 245306.1-245306.8, issn 1098-0121Article

Bias dependence of capacitances in modulation-doped FET's at 4 GHzARNOLD, D; KOPP, W; FISCHER, R et al.IEEE electron device letters. 1984, Vol 5, Num 4, pp 123-125, issn 0741-3106Article

Degradation of native oxide passivated silicon photodiodes by repeated oxide biasVERDEBOUT, J; BOOKER, R. L.Journal of applied physics. 1984, Vol 55, Num 2, pp 406-412, issn 0021-8979Article

Emission des porteurs de charge dans un diélectrique lors de leur réchauffement dans un transistor par une polarisation canal-substratKOLOSANOV, V. A; SINITSA, S. P.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 152-156, issn 0544-1269Article

Nonlinear pyroelectric current and the D.C. electric bias fieldZAJOSZ, H. J.Ferroelectrics letters section. 1983, Vol 1, Num 4, pp 113-117Article

Beyond the linearity of current-voltage characteristics in multiwalled carbon nanotubesBOURLON, B; MIKO, C; FORRO, L et al.Semiconductor science and technology. 2006, Vol 21, Num 11, issn 0268-1242, S33-S37Article

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