ct.\*:("Theory and models of film growth")
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Modelling of columnar growth in continuum ballistic depositionENOMOTO, Yoshihisa; TAGUCHI, Masaharu.Applied surface science. 2005, Vol 244, Num 1-4, pp 213-216, issn 0169-4332, 4 p.Conference Paper
Molecular dynamics simulation of the thermal spike in amorphous carbon thin filmsPEARCE, G. K; MARKS, N. A; MCKENZIE, D. R et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 921-927, issn 0925-9635, 7 p.Conference Paper
Thin film deposition of tetrahedral amorphous carbon : a molecular dynamics studyMARKS, N. A.Diamond and related materials. 2005, Vol 14, Num 8, pp 1223-1231, issn 0925-9635, 9 p.Conference Paper
Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactantPAUL, Neelima; ASAOKA, Hidehito; MYSLIVECEK, Josef et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 19, pp 193402.1-193402.4, issn 1098-0121Article
Self-organized quantum-wire lattice via step flow growth of a short-period superlatticeLUGANG BAI; TERSOFF, J; FENG LIU et al.Physical review letters. 2004, Vol 92, Num 22, pp 225503.1-225503.4, issn 0031-9007Article
Influence of the temperature distribution on chemical deposition in internal problemsLEVDANSKII, V. V; SMOLIK, J.Journal of engineering physics and thermophysics. 2003, Vol 76, Num 1, pp 168-172, issn 1062-0125, 5 p.Article
Analysis of the thin-oxide growth kinetic equationBERESFORD, R.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 973-977, issn 0268-1242, 5 p.Article
Simulation of island behavior in discontinuous film growthLEVCHENKO, I; BARANOV, O.Vacuum. 2003, Vol 72, Num 2, pp 205-210, issn 0042-207X, 6 p.Article
Morphological evolution driven by strain induced surface diffusionZHANG, Y. W; BOWER, A. F; LIU, P et al.Thin solid films. 2003, Vol 424, Num 1, pp 9-14, issn 0040-6090, 6 p.Conference Paper
Rate equations model for layer epitaxial growth kineticsTROFIMOV, Vladimir I; MOKEROV, Vladimir G.Thin solid films. 2003, Vol 428, Num 1-2, pp 66-71, issn 0040-6090, 6 p.Conference Paper
Measurement of the reaction energy of binary components in tri-phase thin films using the hollow cathode discharge techniqueYANG, Y. S; LEE, S. C; TSAO, C.-Y. A et al.Applied surface science. 2002, Vol 187, Num 3-4, pp 275-278, issn 0169-4332Article
On the origin of the kinetic growth instability of homoepitaxy on Si(001)MYSLIVECEK, J; SCHELLING, C; SPRINGHOLZ, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 410-414, issn 0921-5107Conference Paper
Formation mechanism of adatom islands on fcc (111) substratesXU, Ya-Qiong; LIU, B.-G; WANG, E. G et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 8, pp 1137-1142, issn 0022-3727Article
Rate equation approach to film growthTOMELLINI, M; FANFONI, M.Current opinion in solid state & materials science. 2001, Vol 5, Num 1, pp 91-96, issn 1359-0286Article
Strained islands as step bunches : shape and growth kineticsKAGANER, V. M; PLOOG, K. H.Solid state communications. 2001, Vol 117, Num 6, pp 337-341, issn 0038-1098Article
Kinetics of physical and chemical deposition of a substance from the gas phase in channelsLEVDANSKII, V. V; SMOLIK, J.Journal of engineering physics and thermophysics. 2001, Vol 74, Num 5, pp 1247-1252, issn 1062-0125Article
Real-time optical characterization of thin film growthDIETZ, N.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 87, Num 1, pp 1-22, issn 0921-5107Article
On the growth mechanism of a-Si:HKESSELS, W. M. M; SMETS, A. H. M; MARRA, D. C et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 154-160, issn 0040-6090Conference Paper
Growth of amorphous semiconductors : tight-binding molecular dynamics studyKOHARY, K; KUGLER, S.Journal of non-crystalline solids. 2000, Vol 266-69, pp 746-749, issn 0022-3093, bConference Paper
Simulation of thin film growth visualization in photodepositionPELED, A; MIRCHIN, N; ZACHARIA, Z et al.Applied surface science. 2000, Vol 154-55, pp 324-330, issn 0169-4332Conference Paper
Growth mode variations of thin films on nano-faceted substratesMAE, K; HONDA, T.Thin solid films. 2000, Vol 373, Num 1-2, pp 199-202, issn 0040-6090Conference Paper
Ehrlich-Schwoebel barrier controlled slope selection in epitaxial growthSCHINZER, S; KÖHLER, S; REENTS, G et al.The European physical journal. B, Condensed matter physics. 2000, Vol 15, Num 1, pp 161-168, issn 1434-6028Article
Monte Carlo growth simulation for AlxGa1-xAs heteroepitaxyGROSSE, F; ZIMMERMANN, R.Journal of crystal growth. 2000, Vol 212, Num 1-2, pp 128-137, issn 0022-0248Article
Adatom lifetime in film growth at solid surfaces in the framework of the Johnson-Mehl-Avrami-Kolmogorov modelTOMELLINI, M; FANFONI, M.Surface science. 1999, Vol 440, Num 3, pp L849-L856, issn 0039-6028Article
Instabilité de croissance dans les couches épitaxiées contraintes. Etude par microscopie à effet tunnel du système In1-xGaxAs / InP (001) = Unstability in the Growth of Epitaxially Strained Layers. Study by Scanning Tunneling Microscopy of the system In1-xGaxAs / InP (001)Solere, Alexis; Porte, Louis.1999, 146 p.Thesis
