Pascal and Francis Bibliographic Databases


Search results

Your search

kw.\*:("Thermal annealing")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV


A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV


A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 15392

  • Page / 616

Selection :

  • and

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle depositionKHARE, C; GERLACH, J. W; HÖCHE, T et al.Applied surface science. 2012, Vol 258, Num 24, pp 9762-9769, issn 0169-4332, 8 p.Article

Adhesion studies of latex film surfaces on the meso- and nanoscaleOLAH, Attila; HEMPENIUS, Mark A; SHAN ZOU et al.Applied surface science. 2006, Vol 252, Num 10, pp 3714-3728, issn 0169-4332, 15 p.Article

Enhancement of photovoltaic characteristics of nanocrystalline 2,3-naphthalocyanine thin film-based organic devicesFARAG, A. A. M; OSIRIS, W. G; AMMAR, A. H et al.Applied surface science. 2012, Vol 259, pp 600-609, issn 0169-4332, 10 p.Article

Controlled tuning of the stop band of colloidal photonic crystals by thermal annealingDENG, Tian-Song; ZHANG, Jun-Yan; ZHU, Kong-Tao et al.Optical materials (Amsterdam). 2010, Vol 32, Num 9, pp 946-949, issn 0925-3467, 4 p.Article

Co-sheathed SiOx nanowiresHYOUN WOO KIM; HYO SUNG KIM; MESFIN ABAYNEH KEBEDE et al.Applied surface science. 2009, Vol 255, Num 20, pp 8425-8429, issn 0169-4332, 5 p.Article

Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silicaADNANE, Bouchaib; LAI, Yi-Fan; SHIEH, Jia-Min et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 862-864, issn 0038-1101, 3 p.Conference Paper

Characteristics of SiOx-cored composite nanowires with Ag shell layersMESFIN ABAYNEH KEBEDE; HYOUN WOO KIM; HYO SUNG SKIM et al.Optical materials (Amsterdam). 2009, Vol 31, Num 12, pp 1864-1866, issn 0925-3467, 3 p.Conference Paper

The development of silver nanoclusters in ion-exchanged soda-lime silicate glassesJIAWEI SHENG; JUAN LI; JUN YU et al.International journal of hydrogen energy. 2007, Vol 32, Num 13, pp 2598-2601, issn 0360-3199, 4 p.Article

Estimation of the maximum power temperature coefficients of PV modules at different time scalesISHII, Tetsuyuki; OTANI, Kenji; TAKASHIMA, Takumi et al.Solar energy materials and solar cells. 2011, Vol 95, Num 1, pp 386-389, issn 0927-0248, 4 p.Conference Paper

Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude―Lorentz modelD'ELIA, Stefano; SCARAMUZZA, Nicola; CIUCHI, Federica et al.Applied surface science. 2009, Vol 255, Num 16, pp 7203-7211, issn 0169-4332, 9 p.Article

The effects of low power density CO2 laser irradiation on graphene propertiesTING HUANG; JIANGYOU LONG; MINLIN ZHONG et al.Applied surface science. 2013, Vol 273, pp 502-506, issn 0169-4332, 5 p.Article

The improved performance of solution-processed SQ:PC71BM photovoltaic devices via MoO3 as the anode modification layerQIANQIAN YANG; DAOBIN YANG; SULING ZHAO et al.Applied surface science. 2013, Vol 284, pp 849-854, issn 0169-4332, 6 p.Article

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealingBASA, D. K; AMBROSONE, G; COSCIA, U et al.Applied surface science. 2009, Vol 255, Num 10, pp 5528-5531, issn 0169-4332, 4 p.Conference Paper

Control of substrate surface temperature in millisecond annealing technique using thermal plasma jetOKADA, T; HIGASHI, S; KAKU, H et al.Thin solid films. 2007, Vol 515, Num 12, pp 4897-4900, issn 0040-6090, 4 p.Conference Paper

Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactorRUDAKOV, Valery I; GUSEV, Valery N.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 70250X.1-70250X.8, issn 0277-786X, isbn 978-0-8194-7238-0 0-8194-7238-7Conference Paper

The effect of plastic deformation and thermal annealing of the copper substrate on the zeolite film formationVALTCHEV, V; MINTOVA, S; VASILEV, I et al.Journal of the Chemical Society. Chemical communications. 1994, Num 8, pp 979-980, issn 0022-4936Article

Particularités du recuit des bilacunes dans le silicium contenant des régions desordonnéesANTONOVA, I.V; VASIL'EV, A.V; PANOV, V.I et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1076-1079, issn 0015-3222Article

Photoacoustic monitoring of damage in ion implanted and annealed Si layersLUCIANI, L; ZAMMIT, U; MARINELLI, M et al.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 2, pp 205-209, issn 0721-7250, 5 p.Article

Rapid thermal annealing of P+ and PE5+ implanted silicon, and its application to solar cellsJOLY, J.-F; CHAUSSEMY, G; BARBIER, D et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1756-1757Conference Paper

Characterization of Y-Ba-Cu-O superconducting thin films prepared by coevaporation of Y, Cu, and BaF2GARZON, F. H; BEERY, J. G; BROWN, D. R et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1365-1367, issn 0003-6951, 3 p.Article

A comparison of defect state densities observed in thermally-annealed hydrogenated amorphous silicon samples after fast or slow cooling ratesGRIMMER, D. P; EPSTEIN, K. A; MISEMER, D. K et al.Photovoltaic specialists conference. 19. 1987, pp 857-862Conference Paper

Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

The effect of pressure on neutron irradiated ammonium chromatesSTAMOULI, M. I.Journal of radioanalytical and nuclear chemistry. 1985, Vol 95, Num 1, pp 21-28, issn 0236-5731Article

The dielectric reliability of very thin SiO2 films grown by rapid thermal processingFUKUDA, H; IWABUCHI, T; OHNO, S et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2164-L2167, issn 0021-4922, part 2Article

Study of oxygen related donors in CZ-silicon annealed at 430°C to 630°CPRAKASH, O; SINGH, S.SPIE proceedings series. 1998, pp 652-655, isbn 0-8194-2756-X, 2VolConference Paper

  • Page / 616