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A computationally simple model for hysteretic thin-film electroluminescent devicesJAREM, J. M; SINGH, V. P.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1834-1841, issn 0018-9383, 1Article

Percolating cermet thin-film thermistors between 50 mk-300 K and 0-20 TGERSHENFELD, N. A; VANCLEVE, J. E; WEBB, W. W et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4760-4762, issn 0021-8979Article

Effect of surface states of WO₃ on the operating characteristics of thin film electrochromic devicesYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Thin solid films. 1983, Vol 101, Num 2, pp 141-151, issn 0040-6090Article

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Broad band emission behaviors in ZnS thin film electroluminescent devicesNAKANO, R; MATSUMOTO, H; ENDO, T et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2103-L2104, issn 0021-4922, part 2Article

Tunnel junctions with yttrium oxide barrier and various ferromagnetic electrodesDIMOPOULOS, Theodoros; GIERES, Günter; COLIS, Silviu et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2296-2298, issn 0018-9464, 3 p., 2Conference Paper

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Le diamant, composant electronique du XXI^e siecle ? = The diamond, electronic component for the XXI century ?DORIGNAC, D.Ingénieurs de l'automobile (Paris). 1998, Num 720, pp 46-53, issn 0020-1200Conference Paper

Excitation efficiency in thin-film electroluminescent devices : proble layer measurementsBENOIT, J; BARTHOU, C; BENALLOUL, P et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1435-1442, issn 0021-8979Article

The measurement of the efficiency of electron impact excited luminescence in thin film devicesMÜLLER, G. O; MACH, R; SCHULZ, G et al.Experimentelle Technik der Physik. 1983, Vol 31, Num 5, pp 391-396, issn 0014-4924Article

On the storage and detection of multiple flux quantum states in thin film double SQUIDsSCHMIDT, W. D; HEINEMANN, S.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp 141-146, issn 0031-8965Article

Electroluminescence in Li-codoped ZnS: TmF₃ thin-film devicesSOHN, S. H; HYUN, D. G; YAMADA, A et al.Applied physics letters. 1993, Vol 62, Num 9, pp 991-993, issn 0003-6951Article

On the excitatory efficiency in ZnS:Mn thin-film electroluminescent devicesZEINERT, A; BENALLOUL, P; BENOIT, J et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2855-2862, issn 0021-8979Article

Detection of 9.4 GHz ultrasonic waves using a thin-film CdS bolometerRAMPTON, V. W; NEWTON, M. I.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 11, pp 1572-1575, issn 0022-3727Article

On the resonance behaviour of a thin film DC-SQUIDSCHMIDT, W.-D; SEIDEL, P; HEINEMANN, S et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K155-K157, issn 0031-8965Article

Electrochromism in a thin-film device using Li₂WO₄ as an Li-electrolyteYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Japanese journal of applied physics. 1983, Vol 22, Num 1, pp 152-156, issn 0021-4922Article

Erasing characteristics of a thin-film electroluminescent ZnS:Mn faceplateSAHNI, O.Proceedings of the society for information display. 1983, Vol 24, Num 2, pp 123-128, issn 0734-1768Article

Mechanism of thin-film electroluminescenceBERNARD, J. E; MARTENS, M. F; MORTON, D. C et al.Proceedings of the society for information display. 1983, Vol 24, Num 2, pp 108-112, issn 0734-1768Article

Thin-film electroluminescent devices: influence of Mn-doping method and degradation phenomenaMENN, R; TUETA, R. J; IZRAEL, A et al.Proceedings of the society for information display. 1983, Vol 24, Num 2, pp 120-123, issn 0734-1768Article