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Results 1 to 25 of 32237

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Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurementsSALEH, R; MUNISA, L; BEYER, W et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 517-520, issn 0022-3093, 4 p.Conference Paper

Reactive epitaxy of beryllium on Si(1 1 1)-(7 × 7)HITE, D. A; TANG, S.-J; SPRUNGER, P. T et al.Chemical physics letters. 2003, Vol 367, Num 1-2, pp 129-135, issn 0009-2614, 7 p.Article

On the structure of epitaxial YHx filmsREMHOF, A; SONG, G; LABERGERIE, D et al.Journal of alloys and compounds. 2002, Vol 330-32, pp 276-279, issn 0925-8388Article

Effect of high temperature-pressure on GaAs layers grown on vicinal Si substratesBAK-MISIUK, J; DYNOWSKA, E; ADAMCZEWSKA, J et al.Crystal research and technology (1979). 2001, Vol 36, Num 8-10, pp 997-1003, issn 0232-1300Conference Paper

Ultrathin V films on Fe(100) : growth and interfacial alloyingIGEL, T; PFANDZELTER, R; WINTER, H et al.Solid state communications. 2000, Vol 116, Num 9, pp 477-481, issn 0038-1098Article

Surface engineering design : modelling surface engineering systems for improved tribological performanceBELL, T; MAO, K; SUN, Y et al.Surface & coatings technology. 1998, Vol 108-09, Num 1-3, pp 360-368, issn 0257-8972Conference Paper

Structure and phase transitions of Ph1-xCaxTiO3 thin filmsGAKH, S. G; MVASNIKOVA, T. P; BUNINA, O. A et al.Inorganic materials. 1997, Vol 33, Num 4, pp 416-418, issn 0020-1685Article

High-resolution X-ray diffraction study of ZnSe/GaAs heterostructures grown by molecular beam epitaxySOU, I. K; MOU, S. M; CHAN, Y. W et al.Journal of crystal growth. 1995, Vol 147, Num 1-2, pp 39-46, issn 0022-0248Article

A modified computer model for the formation of porous siliconHE, Z. J; HUANG, Y. P; KWOR, R et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 96-100, issn 0040-6090Article

In-situ X-ray imaging of III-V strained-layer relaxation processesWHITEHOUSE, C. R; CULLIS, A. G; LACEY, G et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 85-91, issn 0022-0248, 1Conference Paper

A 13C isotopic tracing study of a-C:H thin-film growthPERRIERE, J; VICKRIDGE, I; LAURENT, A et al.Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 2, pp 187-190, issn 0721-7250Article

Effect of strain on the growth mechanism and structure of ultra-thin Cu films on Pd(110)BARNES, C; GLEESON, M.Surface science. 1994, Vol 319, Num 1-2, pp 157-164, issn 0039-6028Article

Preparation of PZT film on (100)Pt/(100) MgO substrate by CVD and its propertiesOTSU, M; FUNAKUBO, H; SHINOZAKI, K et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1994, Vol 102, Num 2, pp 128-132, issn 0914-5400Article

Etude par microscopie électronique à haute résolution de multicouches métalliques à fort désaccord paramétrique: systèmes Au/Ni, Ag/Ni et Au/Co = High resolution electron microscopy study of metallic multilayers with large misfit: Au/Ni, Ag/Ni and Au/Co systemsBayle, Pascale; Thibault, J.1994, 170 p.Thesis

Use of valence band Auger electron spectroscopy to study thin film growth : oxide and diamond-like carbon filmsSTEFFEN, H. J.Thin solid films. 1994, Vol 253, Num 1-2, pp 269-276, issn 0040-6090Conference Paper

Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfacesDE CARO, L; TAPFER, L.Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2298-2303, issn 0163-1829Article

Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001)GUHA, S; WU, B. J; CHENG, H et al.Applied physics letters. 1993, Vol 63, Num 15, pp 2129-2131, issn 0003-6951Article

Photo-oxidation of a-Si : C: H filmsIBRAHIM, F; WILSON, J. I. B; JOHN, P et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1051-1054, issn 0022-3093, 2Conference Paper

Real time infrared reflectance spectroscopy : a study of hydrogen incorporation and release during a-Si:H growth by reactive magnetron sputteringKATIYAR, M; FENG, G. F; YANG, Y. H et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 111-114, issn 0022-3093, 1Conference Paper

Molecular dynamics simulations of La2O3 thin films on SiO2MOU FANG; KELTY, Stephen P; XIANGMING HE et al.Journal of energy chemistry. 2014, Vol 23, Num 3, pp 282-286, issn 2095-4956, 5 p.Article

Elemental thin film depth profiles by ion beam analysis using simulated annealing: a new toolJEYNES, C; BARRADAS, N. P; MARRIOTT, P. K et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 7, pp R97-R126, issn 0022-3727Article

The effect of stress on cubic-to-tetragonal phase transitions in Mg2TiO4 and Mg2GeO4 spinel filmsSENZ, St; BLUM, W; HESSE, D et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 1, pp 109-124, issn 1364-2804Article

Characterization of heat-treated CN films fabricated by dual-facing-target sputtering for soft X-ray multilayer mirrorsBAI, H. L; JIANG, E. Y; WU, P et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 6, pp 641-647, issn 0947-8396Article

Anatase-to-rutile transition of titania thin films prepared by MOCVDBYUN, C; JANG, J. W; KIM, I. T et al.Materials research bulletin. 1997, Vol 32, Num 4, pp 431-440, issn 0025-5408Article

Phase formation sequences in the silicon-phosphorus system : determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical modelCARLSSON, J. R. A; CLEVENGER, L; LUDWIG, K. L et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 3, pp 363-376, issn 1364-2812Article

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