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kw.\*:("Thin film transistor")

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Results 1 to 25 of 4691

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Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistorKARTERI, İbrahim; KARATAS, Sükrü; YAKUPHANOGLU, Fahrettin et al.Applied surface science. 2014, Vol 318, pp 74-78, issn 0169-4332, 5 p.Conference Paper

Papers Selected from the 3RD International TFT Conference - ITC'07FORTUNATO, Guglielmo; ARAKAWA, Y; CALLEJA, E et al.Solid-state electronics. 2008, Vol 52, Num 3, issn 0038-1101, 149 p.Conference Proceedings

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodesKWANG SEOK LEE; BLANCHET, Graciela B; FENG GAO et al.DRC : Device research conference. 2004, pp 125-126, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Current enhancement in regioregular poly(thiophene) thin film transistorsCHABINYC, Michael L; LU, Jeng-Ping; SALLEO, Alberto et al.DRC : Device research conference. 2004, pp a10-a11, isbn 0-7803-8284-6, 1VolConference Paper

Large on/off current ratio and low leakage current poly-Si TFT's with multichannel structureUNAGAMI, T; KOGURE, O.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1986-1989, issn 0018-9383Article

Metal-replaced junction for reducing the junction parasitic resistance of a TFTDONGLI ZHANG; MAN WONG.IEEE electron device letters. 2006, Vol 27, Num 4, pp 269-271, issn 0741-3106, 3 p.Article

ELECTRICAL PROPERTIES OF BULK-BARRIER DIODESMADER H.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1766-1771; BIBL. 12 REF.Article

GAAS LSI-DIRECTED MESFET'S WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINTYAMASAKI K; ASAI K; KURAMADA K et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1772-1777; BIBL. 18 REF.Article

SHORT-CHANNEL MOS TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIMEMULLER W; RISCH L; SCHUTZ A et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1778-1784; BIBL. 13 REF.Article

A NOVEL BURIED-DRAIN DMOSFET STRUCTUREFICHTNER W; COOPER JA JR; TRETOLA AR et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1785-1791; BIBL. 36 REF.Article

DEPENDENCE OF NORMALLY-OFF GAAS JFET PERFORMANCE ON DEVICE STRUCTUREKATO Y; DOHSEN M; KASAHARA J et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1755-1760; BIBL. 10 REF.Article

FET PHOTODETECTORS: A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATIONNOAD JP; HARA EH; HUM RH et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1792-1797; BIBL. 14 REF.Article

A NOTATION FOR DESIGNING RESTORING LOGIC CIRCUITRY IN CMOSREM M; MEAD C.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 5-10; BIBL. 3 REF.Article

CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFET'SSIMON TAM; PING KEUNG KO; CHENMING HU et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1740-1744; BIBL. 16 REF.Article

A SIMPLE MODEL FOR SHORT-CHANNEL EFFECTS OF A BURIED-CHANNEL MOSFERT ON THE BURIED INSULATOROMURA Y.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1749-1755; BIBL. 21 REF.Article

A VERTICALLY ISOLATED SELF-ALIGNED TRANSISTOR-VISTTAKEMOTO T; FUJITA T; KAWAKITA K et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1761-1765; BIBL. 13 REF.Article

Application of phosphonic acid self-assembled monolayer in organic field-effect transistorsZHEFENG LI; JIAO LI; XIANYE LUO et al.Applied surface science. 2013, Vol 282, pp 487-491, issn 0169-4332, 5 p.Article

Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealingPARK, Hyun-Woo; CHOI, Min-Jun; YONGCHEOL JO et al.Applied surface science. 2014, Vol 321, pp 520-524, issn 0169-4332, 5 p.Article

Isocyanate functionalized graphene/P3HT based nanocompositesCOSMIN OBREJA, Alexandru; CRISTEA, Dana; GAVRILA, Raluca et al.Applied surface science. 2013, Vol 276, pp 458-467, issn 0169-4332, 10 p.Article

Configuration of pentacene (C22H14) films on Si(100)-2 × 1 studied by NEXAFSLEE, Han-Koo; HAN, Jin-Hee; KIM, Ki-Jeong et al.Surface science. 2007, Vol 601, Num 6, pp 1456-1460, issn 0039-6028, 5 p.Article

Improvement of mechanical durability on organic TFT with printed electrodes prepared from nanoparticle inkSEKINE, Tomohito; IKEDA, Hideaki; KOSAKAI, Akifumi et al.Applied surface science. 2014, Vol 294, pp 20-23, issn 0169-4332, 4 p.Article

Indium zinc oxide thin films deposited by sputtering at room temperatureLIM, Wantae; WANG, Yu-Lin; REN, F et al.Applied surface science. 2008, Vol 254, Num 9, pp 2878-2881, issn 0169-4332, 4 p.Article

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)LIU, Y. R; PENG, J. B; LAI, P. T et al.Applied surface science. 2007, Vol 253, Num 17, pp 6987-6991, issn 0169-4332, 5 p.Article

DRAIN-CURRENT DISTORTION IN CDSE THIN-FILM TRANSISTORSWYSOCKI JJ.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1798-1805; BIBL. 7 REF.Article

High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike DopingLIAO, Chun-Hung; LI, Chang-Hung; ZAN, Hsiao-Wen et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1274-1276, issn 0741-3106, 3 p.Article

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