Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistorKARTERI, İbrahim; KARATAS, Sükrü; YAKUPHANOGLU, Fahrettin et al.Applied surface science. 2014, Vol 318, pp 74-78, issn 0169-4332, 5 p.Conference Paper

Papers Selected from the 3RD International TFT Conference - ITC'07FORTUNATO, Guglielmo; ARAKAWA, Y; CALLEJA, E et al.Solid-state electronics. 2008, Vol 52, Num 3, issn 0038-1101, 149 p.Conference Proceedings

Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodesKWANG SEOK LEE; BLANCHET, Graciela B; FENG GAO et al.DRC : Device research conference. 2004, pp 125-126, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Metal-replaced junction for reducing the junction parasitic resistance of a TFTDONGLI ZHANG; MAN WONG.IEEE electron device letters. 2006, Vol 27, Num 4, pp 269-271, issn 0741-3106, 3 p.Article

ELECTRICAL PROPERTIES OF BULK-BARRIER DIODESMADER H.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1766-1771; BIBL. 12 REF.Article

GAAS LSI-DIRECTED MESFET'S WITH SELF-ALIGNED IMPLANTATION FOR N⁺-LAYER TECHNOLOGY (SAINTYAMASAKI K; ASAI K; KURAMADA K et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1772-1777; BIBL. 18 REF.Article

SHORT-CHANNEL MOS TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIMEMULLER W; RISCH L; SCHUTZ A et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1778-1784; BIBL. 13 REF.Article

A NOVEL BURIED-DRAIN DMOSFET STRUCTUREFICHTNER W; COOPER JA JR; TRETOLA AR et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1785-1791; BIBL. 36 REF.Article

FET PHOTODETECTORS: A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATIONNOAD JP; HARA EH; HUM RH et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1792-1797; BIBL. 14 REF.Article

A NOTATION FOR DESIGNING RESTORING LOGIC CIRCUITRY IN CMOSREM M; MEAD C.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 5-10; BIBL. 3 REF.Article

Application of phosphonic acid self-assembled monolayer in organic field-effect transistorsZHEFENG LI; JIAO LI; XIANYE LUO et al.Applied surface science. 2013, Vol 282, pp 487-491, issn 0169-4332, 5 p.Article

Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealingPARK, Hyun-Woo; CHOI, Min-Jun; YONGCHEOL JO et al.Applied surface science. 2014, Vol 321, pp 520-524, issn 0169-4332, 5 p.Article

Isocyanate functionalized graphene/P3HT based nanocompositesCOSMIN OBREJA, Alexandru; CRISTEA, Dana; GAVRILA, Raluca et al.Applied surface science. 2013, Vol 276, pp 458-467, issn 0169-4332, 10 p.Article

Configuration of pentacene (C₂₂H₁₄) films on Si(100)-2 × 1 studied by NEXAFSLEE, Han-Koo; HAN, Jin-Hee; KIM, Ki-Jeong et al.Surface science. 2007, Vol 601, Num 6, pp 1456-1460, issn 0039-6028, 5 p.Article

Indium zinc oxide thin films deposited by sputtering at room temperatureLIM, Wantae; WANG, Yu-Lin; REN, F et al.Applied surface science. 2008, Vol 254, Num 9, pp 2878-2881, issn 0169-4332, 4 p.Article

Stability of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)LIU, Y. R; PENG, J. B; LAI, P. T et al.Applied surface science. 2007, Vol 253, Num 17, pp 6987-6991, issn 0169-4332, 5 p.Article

DRAIN-CURRENT DISTORTION IN CDSE THIN-FILM TRANSISTORSWYSOCKI JJ.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1798-1805; BIBL. 7 REF.Article

High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike DopingLIAO, Chun-Hung; LI, Chang-Hung; ZAN, Hsiao-Wen et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1274-1276, issn 0741-3106, 3 p.Article

Depletion-mode TFT made of low-temperature poly-SiYONG DUCK SON; KYUNG DONG YANG; BYUNG SEONG BAE et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 5, pp 1260-1262, issn 0018-9383, 3 p.Article

High-voltage polycrystalline-silicon TFT for addressing electroluminescent devicesUNAGAMI, T; TSUJIYAMA, B.Proceedings of the society for information display. 1984, Vol 25, Num 2, pp 117-121, issn 0734-1768Article

A printable form of single crystal silicon for high performance thin film transistors on plasticMENARD, E; KHANG, D.-Y; LEE, K et al.DRC : Device research conference. 2004, pp 127-128, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Silicon thin film transistor arrays for liquid crystals displaysLAKATOS, A. I.Applied physics communications. 1982, Vol 2, Num 3, pp 115-129, issn 0277-9374Article

Synthesis, properties, and device applications of functionalized acenesANTHONY, John E; BROOKS, James S; BATON, David L et al.SPIE proceedings series. 2003, pp 124-132, isbn 0-8194-5090-1, 9 p.Conference Paper

Simulations of short-channel and overlap effects in amorphous silicon thin-film transistorsSHAW, J. G; HACK, M.Journal of applied physics. 1989, Vol 65, Num 5, pp 2124-2129, issn 0021-8979, 6 p.Article

Study on narrow-stripe polycrystalline silicon thin-films transistorsTAKESHITA, T; UNAGAMI, T; KOGURE, O et al.Japanese journal of applied physics. 1988, Vol 27, Num 10, pp 1937-1941, issn 0021-4922Article