Third international conference on low dimensional structures and devices, September 15-17, 1999, Antalya, TurkeyHENINI, Mohamed.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, issn 0921-5107, 315 p.Conference Proceedings

Characterization of quantum well structures using surface photovoltage spectroscopyASHKENASY, N; LEIBOVITCH, M; ROSENWAKS, Y et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 125-132, issn 0921-5107Conference Paper

3D island nucleation behaviour on high index substratesSANGUINETTI, S; CHIANTONI, G; GRILLI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 239-241, issn 0921-5107Conference Paper

Field emission from amorphous diamond coated silicon tipsHUQ, S. E; PREWETT, P. D; SHE, J. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 184-187, issn 0921-5107Conference Paper

Solving problems of low dimensional devices at the system levelVOSS, B; GLESNER, M.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 276-281, issn 0921-5107Conference Paper

Fabrication of a silicon based electroluminescent deviceMALININ, A; OVCHINNIKOV, V; NOVIKOV, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 32-35, issn 0921-5107Conference Paper

Photocurrent spectroscopy of QW GRIN laser structuresHERRMANN, K. H; AL-OTAIBI, H; TOMM, J. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 61-65, issn 0921-5107Conference Paper

Strained V-groove quantum wires in multidimensional microcavitiesCONSTANTIN, C; MARTINET, E; LEIFER, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 158-164, issn 0921-5107Conference Paper

Formation and photoluminescence of Ge and Si nanoparticles encapsulated in oxide layersOKU, T; NAKAYAMA, T; KUNO, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 242-247, issn 0921-5107Conference Paper

Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applicationsRAZEGHI, M; SANDVIK, P; KUNG, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 107-112, issn 0921-5107Conference Paper

Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper

Resonant cavity light-emitting diodes at 660 and 880 nmVILOKKINEN, V; SIPILÄ, P; MELANEN, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 165-167, issn 0921-5107Conference Paper

Synthesis, atomic structures and properties of carbon and boron nitride fullerene materialsOKU, T; HIRANO, T; KUNO, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 206-217, issn 0921-5107Conference Paper

High-rate electron cyclotron resonance etching of GaAs via holesCHEN, Y. W; OOI, B. S; NG, G. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 282-285, issn 0921-5107Conference Paper

Dynamics of SiO₂/SiO_x/Si multilayer growth and interfacial effects on silicon quantum well confinement propertiesDA SILVA, E. F; DE VASCONCELOS, E. A; STOSIC, B. D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 188-192, issn 0921-5107Conference Paper

Quantum well bandgap engineering for 1.5 μm telecom applicationsRAMDANE, A; OUGAZZADEN, A.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 66-69, issn 0921-5107Conference Paper

The evolution of group III nitride semiconductors Seeking blue light emissionAKASAKI, I.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 101-106, issn 0921-5107Conference Paper

Device physics and state-of-the-art of quantum well infrared photodetectors and arraysTIDROW, M. Z.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 45-51, issn 0921-5107Conference Paper

High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μmLANE, B; TONG, S; DIAZ, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 52-55, issn 0921-5107Conference Paper

Experimental investigation on the dielectric behavior of nanostructured rutile-phase titaniaYE, X.-S; XIAO, Z.-G; LIN, D.-S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 133-136, issn 0921-5107Conference Paper

Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxyLEIFELD, O; BEYER, A; MÜLLER, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 222-228, issn 0921-5107Conference Paper

Lasing from excited states in self-assembled InP/GaInP quantum islandsPORSCHE, J; OST, M; RIEDL, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 263-268, issn 0921-5107Conference Paper

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectorsPERERA, A. G. U; SHEN, W. Z; LIU, H. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 56-60, issn 0921-5107Conference Paper

Formation and device application of Er-doped nanocrystalline Si using laser ablationXINWEI ZHAO; ISSHIKI, H; AOYAGI, Y et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 197-201, issn 0921-5107Conference Paper

Hole-burning corrections in the stationary analysis of DFB laser diodesFERREIRA FERNANDES, C.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 75-79, issn 0921-5107Conference Paper