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kw.\*:("Tin Lead Selenides Mixed")

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STRUCTURE HETEROGENE POUR LASERS A INJECTION A BASE DE PB1-XSNXSEZASAVITSKIJ II; ZLOMANOV VP; KASHKUR IP et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 943-948; BIBL. 12 REF.Article

Mesa-stripe Pb1-xSnxSe tunable diode lasersBUTLER, J. F; REEDER, R. E; LINDEN, K. J et al.IEEE journal of quantum electronics. 1983, Vol 19, Num 10, pp 1520-1525, issn 0018-9197Article

Expression for the Fermi energy in narrow-bandgap semiconductorsJOYCE, W. B.IEEE journal of quantum electronics. 1983, Vol 19, Num 11, pp 1625-1627, issn 0018-9197Article

Pb1-xSnxBe/PbSe heterostructure lasersBRYANT, F. J; QADEER, A; REED, J et al.IEE proceedings. Part I. Solid-state and electron devices. 1983, Vol 130, Num 6, pp 287-291, issn 0143-7100Article

A STUDY OF THE PHONON FREQUENCIES OF NARROW GAP SEMICONDUCTING MIXED CRYSTAL PB0.8SN0.2SEPRAKASH S; GUPTA HC; TRIPATHI BB et al.1983; JOURNAL OF CHEMICAL PHYSICS; ISSN 0021-9606; USA; DA. 1983; VOL. 78; NO 10; PP. 6335-6336; BIBL. 18 REF.Article

Fast optical switching and optical bistability in a PbSnSe étalonREID, J. J. E; KAR, A. K; MACKENZIE, H. A et al.Applied physics letters. 1987, Vol 51, Num 16, pp 1215-1217, issn 0003-6951Article

On time delays in lead salt semiconductor diode lasersTAYLOR, S. E.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 91-94, issn 0721-7250Article

Some aspects of the technology of lead salt diode lasers unsed in gas monitoring systemsTOMM, J. W; SUMPF, B; HERRMANN, K et al.Crystal research and technology (1979). 1987, Vol 22, Num 7, pp 981-986, issn 0232-1300Article

Metal clad Pb1-xSnxSe/Pb1-x-yEuySnxSe distributed feedback lasersSHANI, Y; KATZIR, A; TACKE, M et al.IEEE journal of quantum electronics. 1988, Vol 24, Num 11, pp 2135-2137, issn 0018-9197Article

Dispersive optical bistability in a PbSnSe etalon at room temperatureREID, J. J. E; KAR, A. K; MACKENZIE, H. A et al.Optics communications. 1987, Vol 64, Num 2, pp 175-180, issn 0030-4018Article

Optical switching in PbSnSe at low temperatureGRISAR, R; BALL, D; PREIER, H. M et al.Optics communications. 1986, Vol 57, Num 2, pp 121-124, issn 0030-4018Article

Ten micrometer infrared light emitting diodes for radiometric sourcesLINDEN, K. J; PALMACCI, S. T.Optical engineering (Bellingham. Print). 1985, Vol 24, Num 4, pp 719-720, issn 0091-3286Article

Time delays in lead-salt semiconductor diode lasersQADEER, A; REED, J; BRYANT, F. J et al.Applied physics. A, Solids and surfaces. 1984, Vol 33, Num 3, pp 181-182, issn 0721-7250Article

Particularités de la diffusion des trous par l'impureté étain isovalente dans PbSe avec abaissement considérable de la conductivitéGURIEVA, E. A; PROKOF'EVA, L. V; RAVIN, YU. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1746-1749, issn 0015-3222Article

Characteristics of compensation of the doping effect of donor impurities by vacancies in Pb0.93Sn0.07SeNEMOV, S. A; ZHITINSKAYA, M. K; PROSHIN, V. I et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 9, pp 986-989, issn 0038-5700Article

Identification des états neutre et ionisé du centre donneur Sn et observation de l'échange de deux électrons entre centres Sn dans les solutions solides à base de PbS et PbSeNASREDANOV, F. S; PROKOF'EVA, L. V; SEREGIN, P. P et al.ZETF. Pis′ma v redakciû. 1984, Vol 87, Num 3, pp 951-959, issn 0044-4510Article

Anodic oxide films on Pb1-xSnxSeGUPTA, S. C; RICHTER, H. J.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1469-1472, issn 0013-4651Article

Distributed Bragg reflector Pb1-xSnxSe/Pb1-x-yEuySnxSe diode lasers with a broad single-mode tuning rangeSHANI, Y; ROSMAN, R; KATZIR, A et al.Journal of applied physics. 1988, Vol 63, Num 11, pp 5603-5606, issn 0021-8979Article

Metal-clad waveguides for Pb-salt diode lasersSHANI, Y; KATZIR, A.Optics letters. 1988, Vol 13, Num 5, pp 372-374, issn 0146-9592Article

77 K cw operation of distributed bragg reflector Pb1-xSnxSe/Pb1-x-yEuySnxSe diode lasersSHANI, Y; KATZIR, A; BACHEM, K.-H et al.Applied physics letters. 1986, Vol 48, Num 18, pp 1178-1180, issn 0003-6951Article

Thermomodulation and stationary photoeffects in semiconductorsGENZOW, D; HERRMANN, K. H; MÖLLMANN, K.-P et al.Experimentelle Technik der Physik. 1985, Vol 33, Num 1, pp 61-68, issn 0014-4924Article

Crystal lattice and band structure of the intermediate high-pressure phase of PbSeSTRELTSOV, S. V; MANAKOV, A. Yu; VOKHMYANIN, A. P et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 38, issn 0953-8984, 385501.1-385501.4Article

Magnetic susceptibility and thermoelectric power of narrow-gap Pb0.82Sn0.18Se semiconductors doped with manganeseLASHKAREV, G. V; BRODOVOI, A. V; RADCHENKO, M. V et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 5, pp 574-575, issn 0038-5700Article

Inversion du coefficient de Hall et de la force thermoélectromotrice sous pression dans les semiconducteurs plomb-étain-sélénium à bandes interdites étroitesITSKEVICH, E. S; KASHIRSKAYA, L. M; KUCHERENKO, I. V et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1986, Vol 43, Num 6, pp 303-306, issn 0370-274XArticle

Observation of Dirac Node Formation and Mass Acquisition in a Topological Crystalline InsulatorOKADA, Yoshinori; MAKSYM SERBYN; FANGCHENG CHOU et al.Science (Washington, D.C.). 2013, Vol 341, Num 6153, pp 1496-1499, issn 0036-8075, 4 p.Article

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