kw.\*:("Tin Lead Tellurides Mixed")
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Low ohmic multilayer contacts in lead-tin-telluride diode lasersHERRMANN, K; SUMPF, B; BÖHME, D et al.Crystal research and technology (1979). 1983, Vol 18, Num 8, pp 1083-1089, issn 0232-1300Article
The far field of PbSnTe injection lasersSHANI, Y; HARDY, A; KAPON, E et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 11, pp 1267-1270, issn 0018-9197Article
Effects of lateral confinement on reflectivity of buried heterostructure PbSbTe lasersHANDELMAN, D; HARDY, A; KATZIR, A et al.Applied optics. 1987, Vol 26, Num 1, pp 12-14, issn 0003-6935Article
Supersymmetry in heterojunctions: band-inverting contact on the basis of Pb1-xSnxTe and Hg1-xCdxTePANKRATOV, O. A; PAKHOMOV, S. V; VOLKOV, B. A et al.Solid state communications. 1987, Vol 61, Num 2, pp 93-96, issn 0038-1098Article
On the behaviour of the thresholdt current densities in dual-wavelength Pb1-xSnxTe injection lasersHERRMANN, K; TOMM, J. W; JALYSCHKO, A et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 2, pp K113-K116, issn 0031-8965Article
The influence of hydrostatic pressure on the I-U-characterisitc of Pb1-xSnxTe diodesHOERSTEL, W; KRAAK, W; RUDOLPH, A. F et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 2, pp K193-K197, issn 0031-8965Article
Théorie de la variation thermique du courant de seuil des lasers à injection à base de semiconducteurs du type Pb1-xSnxTeLUBASHEVSKIJ, I. A; RYZHIJ, V. I; MIZERINA, N. YU et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1631-1634, issn 0015-3222Article
PbSnTe diode lasers incorporating passive waveguidesKAPON, E; ZUSSMAN, A; KATZIR, A et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3336-3337, issn 0021-8979Article
TUNNELING-DETERMINED THRESHOLD CURRENT IN PB1-XSNXTE DIODE LASERSEGER D; ORON M; ZEMEL A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 471-473; BIBL. 24 REF.Article
DISORDER SCATTERING IN MIXED PB1-XSNXTE-TYPE SEMICONDUCTORSSIERANSKI K; SZATKOWSKI J.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 2; PP. K87-K90; BIBL. 9 REF.Article
On time delays in lead salt semiconductor diode lasersTAYLOR, S. E.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 91-94, issn 0721-7250Article
Influence de la concentration des défauts intrinsèques sur la diffusion d'indium dans Pb0,8Sn0,2TeBESTAEV, M. V; DEDEGKAEV, T. T; MOSHNIKOV, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1868-1870, issn 0367-3294Article
Calculation of the refractive index of lead-tin-telluride for infrared devicesSHANI, Y; ROSMAN, R; KATZIR, A et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 10, pp 1110-1114, issn 0018-9197Article
Electronic structure of PbTe/Pb1-xSnxTe superlatticesKRIECHBAUM, M; AMBROSCH, K. E; FANTNER, E. J et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3394-3405, issn 0163-1829Article
PbTe-SnTe mutual diffusion coefficient at just above the Pb0.8Sn0.2Te solidus temperatureKINOSHITA, K; SUGII, K.Journal of crystal growth. 1984, Vol 67, Num 2, pp 375-379, issn 0022-0248Article
High sensitivity photoresistors based on homogeneous Pb1-x-ySnxGeyTe :In epitaxal filmsCHISHKO, V. F; HRYAPOV, V. T; KASATKINI. L et al.Infrared physics. 1992, Vol 33, Num 3, pp 197-201, issn 0020-0891Article
PbSnTe double-heterostructure lasers and PbEuTe double-heterostructure lasers by hot-wall epitaxyNISHIJIMA, Y.Journal of applied physics. 1989, Vol 65, Num 3, pp 935-940, issn 0021-8979, 6 p.Article
Lasing mechanism of type-I' PbSnTe-PbTeSe multiquantum well laser with doping structureISHIDA, A; FUJIYASU, H; EBE, H et al.Journal of applied physics. 1986, Vol 59, Num 9, pp 3023-3027, issn 0021-8979Article
Etude des structures à bande interdite variable à base de Pb1-xSnxTeALEKSANDROVA, O. A; KAMCHATKA, M. I; MIROPOL'SKIJ, M. S et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 825-830, issn 0015-3222Article
Resistance changes of Pb0.8Sn0.2Te under dynamic loading in the 0-100 kbar rangeROSENBERG, Z; GENOSSAR, J.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 4, pp 661-667, issn 0022-3727Article
Etude de la perfection de la structure des monocristaux Pb1-xSnxTe par les méthodes de la topographie X et du spectromètre à deux cristauxVERSHIGORA, Z. K; KONDRATENKO, M. M; LAVRENCHUK, A. P et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 6, pp 1228-1230, issn 0044-4642Article
An indication of quantum Hall effect in PbTe-Pb1-xSnxTe superlatticeTAKAOKA, S; NIHEI, F; MURASE, K et al.Journal of the Physical Society of Japan. 1986, Vol 55, Num 8, pp 2519-2522, issn 0031-9015Article
Tunneling through narrow-gap semiconductor barriersHEREMANS, J; PARTIN, D. L; DRESSELHAUS, P. D et al.Applied physics letters. 1986, Vol 48, Num 10, pp 644-646, issn 0003-6951Article
Observation of the coupled plasmon-LO phonon mode energy in photo-excited Pb1-xSnxTe doped with indium impuritiesTAKAOKA, S; HAMAGUCHI, T; SHIMOMURA, S et al.Solid state communications. 1985, Vol 54, Num 1, pp 99-102, issn 0038-1098Article
Oscillations magnétophononiques de la magnétorésistance longitudinale dans les cristaux de Pb1-xSnxTeMASHOVETS, D. V; NIKORICH, V. Z; NIKORICH, A. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1886-1888, issn 0015-3222Article
