kw.\*:("Titane germaniure")
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DIREKTBEOBACHTUNG DER AUSBILDUNG VON OXIDISCHEN DECKSCHICHTEN AUF MOSI2/TIGE2-MISCHKOERPERN. = OBSERVATION DIRECTE DE LA FORMATION D'UNE COUCHE D'OXYDES SUR LES MELANGES DE MOSI2/TIGE2SCHLICHTING J.1976; HIGH TEMPER.-HIGH PRESS.; G.B.; DA. 1976; VOL. 8; NO 1; PP. 99-102; BIBL. 4 REF.Article
Crystallographic data of new ternary CeFeSi-type RTiGe (R=Y, Gd-Tm) compoundsMOROZKIN, A. V; SEROPEGIN, Yu. D; LEONOV, A. V et al.Journal of alloys and compounds. 1998, Vol 267, Num 1-2, pp L14-L15, issn 0925-8388Article
CAPACITE CALORIFIQUE, ENTHALPIES ET ENTROPIES STANDARDS DES GERMANIURES TI5GE3 ET SC5GE3BELOKUROV EV; KALISHEVICH GI; GEL'D PV et al.1978; ZH. FIZ. KHIM.; SUN; DA. 1978; VOL. 52; NO 11; PP. 2970-2971; BIBL. 4 REF.Article
Infrared spectrum and compressibility of Ti3GeC2to 51 GPaMANOUN, Bouchaib; YANG, H; SAXENA, S. K et al.Journal of alloys and compounds. 2007, Vol 433, Num 1-2, pp 265-268, issn 0925-8388, 4 p.Article
Magnetic properties of hp13 type TiFe6Ge6 alloyNISHIHARA, R; AKIMITSU, M; HORI, T et al.Journal of magnetism and magnetic materials. 1999, Vol 196-97, pp 665-666, issn 0304-8853Conference Paper
Electronic structure of Gd5(Si, Ge)4SKOREK, G; DENISZCZYK, J; SZADE, J et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 30, pp 7273-7286, issn 0953-8984Article
New ternary compounds with CeFeSi-type structure (LuTiSi, LuTiGe) and CeScSi-type structure (ZrVGe and HfVGe)MOROZKIN, A. V.Journal of alloys and compounds. 1999, Vol 289, Num 1-2, pp L10-L11, issn 0925-8388Article
Magnetic properties and magnetic structure of HoTiGe and ErTiGePROKES, K; TEGUS, O; BRÜCK, E et al.Journal of alloys and compounds. 2002, Vol 335, Num 1-2, pp 62-69, issn 0925-8388Article
Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantationUMAPATHI, B; DAS, S; LAHIRI, S. K et al.Journal of electronic materials. 2001, Vol 30, Num 1, pp 17-22, issn 0361-5235Article
Crystal and magnetic structure of new ternary uranium intermetallics : U3TiX5 (X = Ge, Sn)BOULET, P; GROSS, G. M; ANDRE, G et al.Journal of solid state chemistry (Print). 1999, Vol 144, Num 2, pp 311-317, issn 0022-4596Article
Structure of amorphous metal-metalloid alloysWILLIAMS, B. T; GURMAN, S. J; AMISS, J. C et al.Physica. B, Condensed matter. 1995, Vol 208-09, pp 367-368, issn 0921-4526Conference Paper
Crystal structure and the magnetic properties of CeTiGe3MANFRINETTI, P; DHAR, S. K; KULKARNI, R et al.Solid state communications. 2005, Vol 135, Num 7, pp 444-448, issn 0038-1098, 5 p.Article
Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistorsLEE, Seung-Yun; CHAN WOO PARK; KANG, Jin-Yoeng et al.Journal of electronic materials. 2003, Vol 32, Num 11, pp 1349-1356, issn 0361-5235, 8 p.Article
Magnetic properties of RTiGe compoundsNIKITIN, S. A; TSKHADADZE, I. A; TELEGINA, I. V et al.Journal of magnetism and magnetic materials. 1998, Vol 182, Num 3, pp 375-380, issn 0304-8853Article
Magnetic and magnetocaloric properties of the high-temperature modification of TbTiGeTENCE, S; GAUDIN, E; ISNARD, O et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 29, issn 0953-8984, 296002.1-296002.8Article
Magnetic structure of the Sm5Ge4-type Tb2Ti3Ge4MOROZKIN, A. V; NIRMALA, R; MALIK, S. K et al.Journal of magnetism and magnetic materials. 2012, Vol 324, Num 23, pp 4030-4033, issn 0304-8853, 4 p.Article
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistorsAGNELLO, P. D; KESAN, V. P; TEJWANI, M et al.Journal of electronic materials. 1994, Vol 23, Num 4, pp 413-421, issn 0361-5235Article
Preparation and electrical properties of a directionally solidified Ge-TiGe2 eutecticDITCHEK, B. M.Journal of applied physics. 1985, Vol 57, Num 6, pp 1961-1967, issn 0021-8979Article
New non-magnetically ordered heavy-fermion system CeTiGeDEPPE, M; CAROCA-CANALES, N; HARTMANN, S et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 20, issn 0953-8984, 206001.1-206001.5Article
Magnetic properties of TbTiGePROKES, K; TEGUS, O; BRÜCK, E et al.Journal of magnetism and magnetic materials. 2001, Vol 236, Num 1-2, pp 28-36, issn 0304-8853Article
Magnetic properties and magnetic structure of DyTiGePROKES, K; TEGUS, O; BRÜCK, E et al.Physica. B, Condensed matter. 2001, Vol 307, Num 1-4, pp 169-174, issn 0921-4526Article
RESISTIVITY OF HIGH-TC, 1 AT% TI-SUBSTITUTED NB3GE = RESISTIVITE DE NB3GE SUBSTITUE PAR 1 AT.% TI, A HAUT TCCADIEU FJ; HASS KC.1980; J. LOW. TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 39; NO 3-4; PP. 329-337; BIBL. 16 REF.Article
Dilatometric and DDC measurements of NiMnGe1-xSix and NiMn1-tTitGe systemsMAVRODIEV, G; KONESKA, S; SZYTUŁA, A et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp K105-K109, issn 0031-8965Article
Neutron diffraction study of the CeFeSi-type RTiGe compounds (R=Pr, Nd, Tb-Er)VERNIERE, A; KLOSEK, V; WELTER, R et al.Journal of magnetism and magnetic materials. 2001, Vol 234, Num 2, pp 261-273, issn 0304-8853Article
Bridgman and Czochralski growth of Ge-TiGe2 eutectic compositesDITCHEK, B. M.Journal of crystal growth. 1986, Vol 75, Num 2, pp 264-268, issn 0022-0248Article
