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A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalismSALLESE, Jean-Michel; KRUMMENACHER, Francois; PREGALDINY, Fabien et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 485-489, issn 0038-1101, 5 p.Article

Relationship between measured and intrinsic transconductances of FET'sCHOU, S. Y; ANTONIADIS, D. A.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 449-450, issn 0018-9383Article

THE NOISE PROPERTIES OF THE LINEARIZED TRANSCONDUCTANCE MULTIPLIER.BAHNAS YZ; BROODWORTH GG; BRUNNSCHWEILER A et al.1977; I.E.E.E. J. SOLID. STATES CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 5; PP. 580-584; BIBL. 9 REF.Article

Correlation between the backgating effect and the gate length shortening on GaAs MESFETsKUZMIK, J; LALINSKY, T.Physica status solidi. A. Applied research. 1990, Vol 119, Num 2, pp K185-K188, issn 0031-8965Article

Nonlinear distortion due to early voltage in the current source transistors of bipolar transconductance stagesMUHAMMAD TAHER ABUELMA'ATTI.Microelectronics. 1989, Vol 20, Num 3, pp 11-18, issn 0026-2692, 8 p.Article

Complementarity property in OTA circuits and applicationsPALOMERA-GARCIA, Rogelio; MANUEL-LAZARO, Antoni.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol III, 303-306Conference Paper

"LEAP-FROG"-KETTENLEITER MIT TRANSKONDUKTANZ-VERSTAERKERN = STRUCTURE EN CHAINE "SAUT DE GRENOUILLE" AU MOYEN D'AMPLIFICATEUR A TRANSCONDUCTANCEKRAUS K.1981; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1981; VOL. 30; NO 1; PP. 93-94; BIBL. 8 REF.Article

CMOS transconductance elementLAKSHMI VISWANATHAN, T.Proceedings of the IEEE. 1986, Vol 74, Num 1, pp 222-224, issn 0018-9219Article

Transconductance of silicon-on-insulator (SOI) MOSFET'sCOLINGE, J.-P.IEEE electron device letters. 1985, Vol 6, Num 11, pp 573-574, issn 0741-3106Article

Lyapunov function for power system with transfer conductancesPOTA, H. R; MOYLAN, P. J.IEEE transactions on automatic control. 1985, Vol 30, Num 2, pp 155-158, issn 0018-9286Article

Design of linear CMOS transconductance elementsNEDUNGADI, A; VISWANATHAN, T. R.IEEE transactions on circuits and systems. 1984, Vol 31, Num 10, pp 891-894, issn 0098-4094Article

Differential Bloch oscillating transistor pairSARKAR, Jayanta; PUSKA, Antti; HASSEL, Juha et al.Superconductor science & technology (Print). 2013, Vol 26, Num 6, issn 0953-2048, 65009.1-65009.4Article

CMOS triode transconductor for continuous-time active integrated filtersPENNOCK, J. L.Electronics Letters. 1985, Vol 21, Num 18, pp 817-818, issn 0013-5194Article

SWITCHED-CAPACITOR TRANSCONDUCTANCE AND RELATED BUILDING BLOCKSVISWANATHAN TR; FARUQUE SM; KISHORE SINGHAL et al.1980; IEEE TRANS. CIRCUITS SYST.; ISSN 0098-4094; USA; DA. 1980; VOL. 27; NO 6; PP. 502-508; BIBL. 12 REF.Article

PROGRAMMIERBARE OPERATIONSVERSTAERKER = AMPLIFICATEUR OPERATIONNEL PROGRAMMABLEKUEHNEL C.1979; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1979; VOL. 28; NO 6; PP. 360-363; BIBL. 5 REF.Article

A model for excess base noise in bipolar junction transistorsDAVIS, T. D; RUCKER, L. M.Solid-state electronics. 1988, Vol 31, Num 2, pp 135-141, issn 0038-1101Article

New OTA-capacitor realisation of a universal biquadNAWROCKI, R; KLEIN, U.Electronics Letters. 1986, Vol 22, Num 1, pp 50-51, issn 0013-5194Article

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSI2 gridBADOZ, P. A; BENSAHEL, D; GUERIN, L et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2307-2309, issn 0003-6951Article

Transconductance degradation in thin-oxide MOSFET'sBACCARANI, G; WORDEMAN, M. R.I.E.E.E. transactions on electron devices. 1983, Vol ED30, Num 10, pp 1295-1304, issn 0018-9383Article

Static and dynamic transconductance of MOSFET'sUMESH SHARMA; BOOTH, R. V. H; WHITE, M. H et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 954-962, issn 0018-9383, 9 p.Article

Frequency dispersion of sidegating transconductance of GaAs junction field-effect transistorsROACH, J. W; WIEDER, H. H; ZULEEG, R et al.Applied physics letters. 1985, Vol 47, Num 12, pp 1285-1287, issn 0003-6951Article

The current efficiency of MOS transconductance amplifiersDEGRAUWE, M. G. R; SANSEN, W. M. C.IEEE journal of solid-state circuits. 1984, Vol 19, Num 3, pp 349-359, issn 0018-9200Article

Switched-OTA technique for floating immittance function simulatorsCHUN-LI HOU; CHUN-CHIEH CHEN; CHUNG-MING HWANG et al.Microelectronics journal. 1995, Vol 26, Num 7, pp 691-695, issn 0959-8324Article

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain VoltageRUDENKO, Tamara; KILCHYTSKA, Valeriya; MOHD KHAIRUDDIN MD ARSHAD et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 12, pp 4180-4188, issn 0018-9383, 9 p.Article

Méthode d'optimisation des filtres continus CMOS et application aux filtres à base de transconductances polarisées en régime triode = CMOS continuous-time filters optimization method and application to circuits using triode operated transconductorsStefanelli, Bruno; Constant, Eugène.1992, 197 p.Thesis

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