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Results 1 to 25 of 2434

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Relationship between measured and intrinsic transconductances of FET'sCHOU, S. Y; ANTONIADIS, D. A.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 449-450, issn 0018-9383Article

Correlation between the backgating effect and the gate length shortening on GaAs MESFETsKUZMIK, J; LALINSKY, T.Physica status solidi. A. Applied research. 1990, Vol 119, Num 2, pp K185-K188, issn 0031-8965Article

Nonlinear distortion due to early voltage in the current source transistors of bipolar transconductance stagesMUHAMMAD TAHER ABUELMA'ATTI.Microelectronics. 1989, Vol 20, Num 3, pp 11-18, issn 0026-2692, 8 p.Article

Complementarity property in OTA circuits and applicationsPALOMERA-GARCIA, Rogelio; MANUEL-LAZARO, Antoni.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol III, 303-306Conference Paper

Differential Bloch oscillating transistor pairSARKAR, Jayanta; PUSKA, Antti; HASSEL, Juha et al.Superconductor science & technology (Print). 2013, Vol 26, Num 6, issn 0953-2048, 65009.1-65009.4Article

A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalismSALLESE, Jean-Michel; KRUMMENACHER, Francois; PREGALDINY, Fabien et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 485-489, issn 0038-1101, 5 p.Article

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSI2 gridBADOZ, P. A; BENSAHEL, D; GUERIN, L et al.Applied physics letters. 1990, Vol 56, Num 23, pp 2307-2309, issn 0003-6951Article

A model for excess base noise in bipolar junction transistorsDAVIS, T. D; RUCKER, L. M.Solid-state electronics. 1988, Vol 31, Num 2, pp 135-141, issn 0038-1101Article

Static and dynamic transconductance of MOSFET'sUMESH SHARMA; BOOTH, R. V. H; WHITE, M. H et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 954-962, issn 0018-9383, 9 p.Article

Transition edge sensor series array bolometerBEYER, J.Superconductor science & technology (Print). 2010, Vol 23, Num 10, issn 0953-2048, 105019.1-105019.7Article

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditionsBARLINI, D; CIAPPA, M; CASTELLAZZI, A et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1772-1777, issn 0026-2714, 6 p.Conference Paper

Instrumentation amplifiers using operational transconductance amplifiersWANLOP SURAKAMPONTORN; VANCHAI RIEWRUJA; CHARRAY SURAWATPUNYA et al.International journal of electronics. 1991, Vol 71, Num 3, pp 511-515, issn 0020-7217Article

Universal active filter with current gain using OTAsCHUN-MING CHANG; PANG-CHIA CHEN.International journal of electronics. 1991, Vol 71, Num 5, pp 805-808, issn 0020-7217Article

Temperature compensation of OTA-based filters and amplifiersMALVAR, H. S; LUETTGEN, M.Electronics Letters. 1987, Vol 23, Num 17, pp 890-891, issn 0013-5194Article

15-40 GHz wideband CMOS mixerJIA CAO; ZHIQUN LI; QIN LI et al.Electronics letters. 2013, Vol 49, Num 24, pp 1537-1539, issn 0013-5194, 3 p.Article

Diplexing distributed amplifier with improved isolationMATA-CONTRERAS, J; CAMACHO-PENALOSA, C; MARTIN-GUERRERO, T. M et al.Electronics letters. 2011, Vol 47, Num 16, pp 922-924, issn 0013-5194, 3 p.Article

Integration-based approach to evaluate the sub-threshold slope of MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; LIOU, Juin J et al.Microelectronics and reliability. 2010, Vol 50, Num 2, pp 312-315, issn 0026-2714, 4 p.Article

Extraction of MOSFET effective channel length and width based on the transconductance-to-current ratioCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 33-38, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Improved cross-coupled quad transconductor cellLIM, Y. C; LAI, W. H; ZHANG, X. W et al.Microelectronics journal. 2000, Vol 31, Num 2, pp 77-81, issn 0959-8324Article

Tunable OTA-based multiphase sinusoidal oscillatorsKHAN, I. A; AHMED, M. T; NIGAR MINHAJ et al.International journal of electronics. 1992, Vol 72, Num 3, pp 443-450, issn 0020-7217Article

New fully-balanced OTA structureGUZINSKI, A; KULEJ, T.Electronics Letters. 1992, Vol 28, Num 5, pp 498-499, issn 0013-5194Article

A new minimum component active-C OTA-based liner voltage (current)-controlled sinusoidal oscillatorMUHAMMAD TAHER ABUEL'ATTI.IEEE transactions on instrumentation and measurement. 1990, Vol 39, Num 5, pp 795-797, issn 0018-9456Article

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET modelDARBANDY, Ghader; GNEITING, Thomas; ALIUS, Heidrun et al.Semiconductor science and technology. 2013, Vol 28, Num 5, issn 0268-1242, 055014.1-055014.8Article

A few CMOS transconductors optimized for low power and wide band operationRAUT, Rabin; NING GUO.Circuits, systems, and signal processing. 2001, Vol 20, Num 6, pp 655-675, issn 0278-081XArticle

Analytical modeling of the device conductances of lightly Doped drain (LDD) MOSFETsTHOMAS, C; KHANNA, M. K; HALDAR, S et al.International conference on microelectronic. 1997, pp 347-350, isbn 0-7803-3664-X, 2VolConference Paper

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