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Results 1 to 25 of 994

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Pressure induced semiconducting to metallic transition in TeSINGH, D. B; VARANDANI, D; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1263-1266, isbn 0-8194-2756-X, 2VolConference Paper

Semi-conductor to metal transition in liquid selenium at high pressure and high temperatureSOLDO, Y; HAZEMANN, J. L; ABERDAM, D et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.983-C2.985, issn 1155-4339, 2Conference Paper

Nanoscale study of conduction through carbon nanotube networksSTADERMANN, M; PAPADAKIS, S. J; WASHBURN, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201402.1-201402.3, issn 1098-0121Article

The photoinduced Mott transition from metal to insulator: the problem of critical concentrationPERGAMENT, Alexander; KAZAKOVA, Elena; MORAK, Andreas et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 7, pp 1151-1156, issn 0953-8984, 6 p.Article

Transverse-field and defect-azimuth effects in achiral carbon nanotubesZHU, Jia-Lin; SONG, Hai-Feng; XIAO HU et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 29, pp 4629-4636, issn 0953-8984, 8 p.Article

Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd)WOLOWIEC, C. T; WHITE, B. D; JEON, I et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 42, issn 0953-8984, 422201.1-422201.6Article

Investigation of fast processes in condensed matter by time-resolved x-ray diffraction : Ultra X-ray Science: Probing Transient Structures in Condensed MatterUSCHMANN, I; KAMPFER, T; ZAMPONI, F et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 1, pp 91-98, issn 0947-8396, 8 p.Article

Investigations of electronic structure of capped carbon nanotubes by scanning tunneling spectroscopyKLUSEK, Z; KOWALCZYK, P; BYSZEWSKI, P et al.Vacuum. 2001, Vol 63, Num 1-2, pp 145-150, issn 0042-207XArticle

Reflectance spectra and electrical resistivity of (Me2-DCNQI)2Li1-xCuxYAMAMOTO, T; TAJIMA, H; YAMAURA, J.-I et al.Journal of the Physical Society of Japan. 1999, Vol 68, Num 4, pp 1384-1391, issn 0031-9015Article

A pseudobinary model of the semiconductor-metal transition in vitrifying meltsFUNTIKOV, V. A.Glass physics and chemistry. 1998, Vol 24, Num 5, pp 427-431, issn 1087-6596Conference Paper

Raman study of black phosphorus up to 13 GPaAKAHAMA, Y; KOBAYASHI, M; KAWAMURA, H et al.Solid state communications. 1997, Vol 104, Num 6, pp 311-315, issn 0038-1098Article

Low-frequency noise in gallium-arsenide schottky-barrier diodes with a nonuniform metal-semiconductor contactMALAKHOVSKIY, O. Y; BOZHKOV, V. G; BYCHKOV, A. G et al.Soviet journal of communications technology & electronics. 1992, Vol 37, Num 12, pp 41-47, issn 8756-6648Article

Diagrammatic description of superconductivity in elements and AnB (n = 1,2,3) compounds based on pseudopotential radiiMAKINO, Yukio; YOSHIMURA, Kazuyoshi.Physica. C. Superconductivity. 2013, Vol 485, pp 115-119, issn 0921-4534, 5 p.Article

Polycubanes linked with C2, N2, NO, and NS : From insulating to metallic behaviorVALENCIA, F; ROMERO, A. H; KIWI, M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 3, pp 033410.1-033410.4, issn 1098-0121Article

Strain induced half-metal to semiconductor transition in GdNDUAN, Chun-Gang; SABIRYANOV, R. F; JIANJUN LIU et al.Physical review letters. 2005, Vol 94, Num 23, pp 237201.1-237201.4, issn 0031-9007Article

Semiconductor-metal transition in liquid As-Te mixtures : Liquids and soft matter papersENDO, H; HOSHINO, H; IKEMOTO, H et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 28, pp 6077-6099, issn 0953-8984Conference Paper

Magnetic properties of chiral carbon toroidsLIN, M. F.Physica. B, Condensed matter. 1999, Vol 269, Num 1, pp 43-48, issn 0921-4526Article

Phase evolution in solidification process of germanium at high pressureHE, D. W; ZHANG, F. X; ZHANG, M et al.Crystal research and technology (1979). 1998, Vol 33, Num 1, pp 43-50, issn 0232-1300Article

Semiconductor-to-metal transition of double walled carbon nanotubes induced by inter-shell interactionZOLYOMI, V; RUSZNYAK, A; KÜRTI, J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 13, pp 3476-3479, issn 0370-1972, 4 p.Conference Paper

Nano electro mechanics of semiconducting carbon nanotube : Nanomechanics of surfaces and interfacesPENG, S; CHO, K.Journal of applied mechanics. 2002, Vol 69, Num 4, pp 451-453, issn 0021-8936Article

Metal-semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubesCHARLIER, A; MCRAE, E; HEYD, R et al.The Journal of physics and chemistry of solids. 2001, Vol 62, Num 3, pp 439-444, issn 0022-3697Article

Dynamics of the pseudogap transformation in semiconducting melts during metallizationSKLYARCHUK, V; PLEVACHUK, Yu.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 41, pp 9179-9185, issn 0953-8984Conference Paper

Influence of tetraethylammonium bromide on phase inhomogeneity of disperse vanadium dioxide particles in matrix of polyethylene glycolTUROV, Vladimir V; GORBIK, Pyotr P; OGENKO, Vladimir M et al.Applied surface science. 2000, Vol 166, pp 492-496, issn 0169-4332Conference Paper

Transient absorption spectra of liquid selenium : a possibility of photoinduced semiconductor-metal transitionSAKAGUCHI, Y; TAMURA, K.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 10, pp 2209-2220, issn 0953-8984Article

Electronic phase transition in the spinless Falicov-Kimball modelFARKASOVSKY, P.Zeitschrift für Physik. B, Condensed matter. 1995, Vol 99, Num 1, pp 77-82, issn 0722-3277Article

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