BILOW: simulation of low-temperature bipolar device behaviorCHRZANOWSKA-JESKE, M; JAEGER, R. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1475-1488, issn 0018-9383, 14 p.Article

Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperatureSTORK, J. M. C; HARAME, D. L; MEYERSON, B. S et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1503-1509, issn 0018-9383, 7 p.Article

Injection transistor logic (ITL): new bipolar low-power inverterARSHINOV, V. I; VECSHINA, E. V.Electronics Letters. 1989, Vol 25, Num 14, pp 898-899, issn 0013-5194, 2 p.Article

Pulsed 1-watt heterojunction bipolar transistors at 35 GHzADLERSTEIN, M. G; ZAITLIN, M. P; HOKE, W et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 5, pp 145-147, issn 1051-8207Article

High-speed (f_t=78 GHz) AllnAs/GalnAs single heterojunction HBTFARLEY, C. W; CHANG, M. F; ASBECK, P. M et al.Electronics Letters. 1989, Vol 25, Num 13, pp 846-847, issn 0013-5194, 2 p.Article

Fully self-aligned microwave InP/GaInAs single heterojunction bipolar transistorsSHANTHARAMA, L. G; SCHUMACHER, H; HAYES, J. R et al.Electronics Letters. 1989, Vol 25, Num 2, pp 127-128, issn 0013-5194, 2 p.Article

Low-temperature characterization of buried-channel NMOSTWILCOX, R. A; CHANG, J; VISWANATHAN, C. R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1440-1447, issn 0018-9383, 8 p.Article

Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoffKYUWOON HWANG; NAVON, D. H; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1067-1072, issn 0018-9383Article

BJT-MOSFET transconductance comparisonsWARNER, R. M; SCHRIMPF, R. D.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 1061-1065, issn 0018-9383, 2Article

Optimisation of VDMOS power transistors for minimum on-state resistanceDAVIES, J. T; WALKER, P; BUTTALL, K. I et al.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 3, pp 87-91, issn 0143-7100Article

An investigation of the transition from polysilicon emitter to SIS emitter behaviorWOLSTENHOLME, G. R; BROWNE, D. C; ASHBURN, P et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1915-1923, issn 0018-9383, 1Article

L'IGBT et ses alternatives = IGBT and its alternativesALOISI, P; CORDONNIER, C.-E.Onde électrique. 1990, Vol 70, Num 5, pp 42-47, issn 0030-2430, 6 p.Conference Paper

Spannungsfeste MIS-Halbleiter-Bauelemente mit geringem Durchlasswiderstand = Composants MIS résistant à la tension, présentant une faible résistance dans le sens de la conduction = High voltage MIS semiconductor components with low turn-on-resistanceWAGNER, S.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1986, Vol 28, Num 4, pp 484-493, issn 0372-7610Article

TECHNOLOGIES ET APPLICATIONS DES TRANSISTORS DE PUISSANCE.1978; TOUTE ELECTRON.; FRA; DA. 1978; NO 431; PP. 27-36; BIBL. 3 REF.Article

Collector-emitter offset voltage in heterojunction bipolar transistorsMAZHARI, B; GAO, G. B; MORKOC, H et al.Solid-state electronics. 1991, Vol 34, Num 3, pp 315-321, issn 0038-1101, 7 p.Article

A 30-GHz 1-W power HEMTHIKOSAKA, K; HIDAKA, N; HIRACHI, Y et al.IEEE electron device letters. 1987, Vol 8, Num 11, pp 521-523, issn 0741-3106Article

Lateral insulated gate transistors with improved latching characteristicsROBINSON, A. L; PATTANAYAK, D. N; ADLER, M. S et al.IEEE electron device letters. 1986, Vol 7, Num 2, pp 61-63, issn 0741-3106Article

A new vertical power MOSFET structure with extremely reduced ON-resistanceUEDA, D; TAKAGI, H; KANO, G et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 1, pp 2-6, issn 0018-9383Article

A novel CMOS-compatible high-voltage transistor structureZAHIR PARPIA; MENA, J. G; SALAMA, C. A. T et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1948-1952, issn 0018-9383Article

Characterization of metal-oxide-semiconductor transistors with very thin gate oxideHUNG, K. K; CHENG, Y. C.Journal of applied physics. 1986, Vol 59, Num 3, pp 816-823, issn 0021-8979Article

The threshold voltage of power MOSFETsIGUMNOV, D. V; MASLOVSKIY, V. A.Telecommunications & radio engineering. 1992, Vol 47, Num 3, pp 101-102, issn 0040-2508Article

Gate controlled bulk-barrier mechanism in an MOS power transistorMCCOWEN, A; BOARD, K.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 6, pp 168-170, issn 0143-7100, 1Article

Static induction transistors optimized for high-voltage operation and high microwave power outputBENCUYA, I; COGAN, A. I; BUTLER, S. J et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1321-1327, issn 0018-9383Article

Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings

Comparisons of microwave performance between single-gate and dual-gate MODFET'sCHEN, Y. K; WANG, G. W; RADULESCU, D. C et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 59-61, issn 0741-3106Article