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A better understanding of the channel mobility of Si MOSFET's based on the physics of quantized subbandsMOU-SHIUNG LIN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2406-2411, issn 0018-9383Article

Accurate determination of doping profile from MOSFET d.c. measurementGUPTA, S.Microelectronics. 1988, Vol 19, Num 6, pp 4-7, issn 0026-2692Article

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET'sYU-ZHANG CHEN; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2180-2188, issn 0018-9383Article

The influence of tilted source-drain implants on high-field effects in submicrometer MOSFET'sBAKER, F. K; PFIESTER, J. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2119-2124, issn 0018-9383Article

Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature techniqueHWU, J. B; LIN, C. M; WANG, W. S et al.Thin solid films. 1986, Vol 142, Num 2, pp 183-191, issn 0040-6090Article

Lateral nonuniformities and the MOSFET mobility step near thresholdWIKSTROM, J. A; VISWANATHAN, C. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2378-2383, issn 0018-9383Article

MOSTSM: a physically based charge conservative MOSFET modelMASUDA, H; AOKI, Y; MANO, J et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1988, Vol 7, Num 12, pp 1129-1236, issn 0278-0070Article

The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistorsKUEING-LONG CHEN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2140-2150, issn 0018-9383Article

Measurement of the average doping concentration in the surface region of the MOS transistorINIEWSKI, K; JAKUBOWSKI, A; NOWAKOWSKI, Z et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp K103-K106, issn 0031-8965Article

MOS oscillators with multi-decade tuning range and Gigahertz maximum speedBANU, M.IEEE journal of solid-state circuits. 1988, Vol 23, Num 6, pp 1386-1393, issn 0018-9200Article

A method to determine surface doping and substrate doping profile of n-channel MOSFETsGUPTA, R. S; JAGADISH, C; CHILANA, G. S et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 671-675, issn 0031-8965Article

Characterization of enhanced perimeter leakage in MOS structures following ion implantationSTINSON, M. G; OSBURN, C. M.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1564-1572, issn 0013-4651Article

Hot electron transport in semiconductorsHÄNSCH, W; SCHMEISER, C.Zeitschrift für angewandte Mathematik und Physik. 1989, Vol 40, Num 3, pp 440-455, issn 0044-2275Article

Degradation of short-channel MOSFET's under constant current stress across gate and drainANJAN BHATTACHARYYA; SHABDE, S. N.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1329-1333, issn 0018-9383Article

Effets of high-field stressing on the channel frequency-response of MOSFETsCHOW, P. D; WANG, K. L.Solid-state electronics. 1986, Vol 29, Num 10, pp 1005-1014, issn 0038-1101Article

Simple two-sections model for short channel MOS transistors in saturationMIRANDA, H; EL NOKALI, M.International journal of electronics. 1986, Vol 61, Num 4, pp 449-458, issn 0020-7217Article

Substrate hole current and oxide breakdownCHEN, I. C; HOLLAND, S; YOUNG, K. K et al.Applied physics letters. 1986, Vol 49, Num 11, pp 669-671, issn 0003-6951Article

Contribution à l'étude de la tétrode MOS. Conduction et bruit de fond basse fréquence = Study of MOS tetrode: conduction and low frequency noiseSadiki, Mohammed; Rigaud, Dominique.1992, 123 p.Thesis

Quantum inversion layer mobility: numerical resultsSUNDARAM PADMANABHAN; ROTHWARF, A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2557-2566, issn 0018-9383, 10 p., part 1Article

On the effect of acoustic layer modes in an MOS oxide on inversion layer mobilityANCONA, M. G.Surface science. 1985, Vol 161, Num 1, pp 147-155, issn 0039-6028Article

Detailed investigation of geometrical factor for pseudo-MOS transistor techniqueKOMIYA, K; BRESSON, N; SATE, S et al.IEEE international SOI conference. 2004, pp 75-76, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Reliability testing of power VDMOS transistorsTOSIC, N; PESIC, B; STOJADINOVIC, N et al.International conference on microelectronic. 1997, pp 667-670, isbn 0-7803-3664-X, 2VolConference Paper

Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensorsHUGHES, R. C; DAWES, W. R; MEYER, W. J et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 1972-1976, issn 0021-8979, 5 p.Article

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET'sHEREMANS, P; BELLENS, R; GROESENEKEN, G et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2194-2209, issn 0018-9383Article