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On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Generation and integration of scalable bipolar compact modelsSHERIDAN, David C; MURTY, Ramana M; NEWTON, Kim M et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 132-139, isbn 0-7803-8618-3, 1Vol, 8 p.Conference Paper

Broadband amplifier at 28 GHz based on the InP/InGaAs HBT phototransistor for optical-radio interfaceTHURET, J; GONZALEZ, C; BENCHIMOL, J. L et al.OMW : interactions between microwaves and optics. International summer school. 1998, pp 142-143, isbn 2-910986-17-9Conference Paper

Planar device isolation for InP based DHBTsPARTHASARATHY, N; DONG, Y; SCOTT, D et al.DRC : Device research conference. 2004, pp 71-72, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Deep submicron InP DHBT technology with electroplated emitter and base contactsURTEAGA, M; ROWELL, P; PIERSON, R et al.DRC : Device research conference. 2004, pp 239-240, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A new method to measure temperature- and power-dependent thermal resistance of HBTsMENOZZI, R; BARRETT, J; ERSLAND, P et al.ROCS workshop. 2004, pp 33-44, isbn 0-7908-0105-1, 1Vol, 12 p.Conference Paper

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substratesTHOMAS, Shawn G; JOHNSON, Eric S; TRACY, Clarence et al.IEEE electron device letters. 2005, Vol 26, Num 7, pp 438-440, issn 0741-3106, 3 p.Article

Collector vertical scaling and performance tradeoffs in 300 GHz sige HBTSRIEH, J.-S; KHATER, M; SCHONENBERG, K. T et al.DRC : Device research conference. 2004, pp 235-236, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Separating HBT wearout from defects during early life operationROESCH, William J; RAINS, Philip.Microelectronics and reliability. 2014, Vol 54, Num 2, pp 360-365, issn 0026-2714, 6 p.Conference Paper

Thermalelectro-feedback model for multi-emitter finger power heterojunction bipolar transistor. Part II: current crush phenomenonYARN, K. F; WANG, Y. H; HOUNG, M. P et al.International journal of electronics. 2006, Vol 93, Num 9, pp 581-588, issn 0020-7217, 8 p.Article

Improved HBT linearity with a post-distortion-type collector linearizerJEON, Yong-Joon; KIM, Hyung-Wook; KIM, Min-Seok et al.IEEE microwave and wireless components letters. 2003, Vol 13, Num 3, pp 102-104, issn 1531-1309, 3 p.Article

Extraction of VBIC model parameters for InGaAsSb DHBTsCHANG, Yang-Hua; CHEN, Jian-Wen.Microelectronics and reliability. 2010, Vol 50, Num 3, pp 370-375, issn 0026-2714, 6 p.Article

High current gain InGaN/GaN HBTs with 300°C operating temperatureKEOGH, D. M; ASBECK, P. M; CHUNG, T et al.Electronics Letters. 2006, Vol 42, Num 11, pp 661-663, issn 0013-5194, 3 p.Article

High frequency operation of gaas-heterojunction bipolar transistor and limitations caused by electron scattering in p-doped basePRABHU, S. S; VENGURLEKAR, A. S.SPIE proceedings series. 2002, pp 906-910, isbn 0-8194-4500-2, 2VolConference Paper

HBT phototransistor as an optical millimeter wave converter. Part II : SimulationRUMELHARD, C; CHENNAFI, N; NAMUROY, E et al.OMW : interactions between microwaves and optics. International summer school. 1998, pp 71-80, isbn 2-910986-17-9Conference Paper

InP/GaAsSb type-II DHBTs with f_T> 350 GHzCHU-KUNG, B. F; FENG, M.Electronics Letters. 2004, Vol 40, Num 20, pp 1305-1307, issn 0013-5194, 3 p.Article

280 GHz f_T InP DHBT with 1.2 μm² base-emitter junction area in MBE regrown-emitter technologyYUN WEI; SCOTT, Dennis W; YINGDA DONG et al.DRC : Device research conference. 2004, pp 237-238, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

SiGe HBT scaling implications on 1/f noise and oscillator phase noiseGUOFU NIU; JIN TANG; ZHIMING FENG et al.IEEE radio frequency integrated circuits symposium. 2004, pp 299-302, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Sige HBT technology with f_max/f_T = 350/300 GHz and gate delay below 3.3 psKHATER, M; RIEH, J.-S; SCHONENBERG, K. T et al.International Electron Devices Meeting. 2004, pp 247-250, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb baseEHRICH, Silja; DRIESEN, Jörn; NEUMANN, Stefan et al.SPIE proceedings series. 2004, pp 164-172, isbn 0-8194-5396-X, 9 p.Conference Paper

High yield reduced process tolerance self-aligned double mesa process technology for SiGe power HBTsLEE, Kok-Yan; JOHNSON, Brian N; MOHAMMADI, Saeed et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 963-966Conference Paper

Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTsGUOFU NIU; KEJUN XIA; SHERIDAN, David et al.IEEE radio frequency integrated circuits symposium. 2004, pp 615-618, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Ratio based direct extraction of small-signal parameters for SiGe HBTsKEJUN XIA; GUOFU NIU; SHERIDAN, David et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 144-147, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

5.7 GHz GaInP/GaAs HBT sub-harmonic gilbert downconverter with octet-phase LO generatorWU, T.-H; WU, T.-H et al.MENG, C; WU, T.-H; WU, T.-H et al.Electronics Letters. 2006, Vol 42, Num 19, pp 1098-1100, issn 0013-5194, 3 p.Article