kw.\*:("Transistor bipolar")
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CARACTERISATION DES DEGRADATIONS DES IGBTS EN MILIEU INDUSTRIEL = CHARACTERIZATION OF IGBT DEGRADATIONS IN INDUSTRIAL ENVIRONMENTMaouad, Alain; Charles, Jean-Pierre.1999, 160 p.Thesis
On the output impedance of a BJT Wilson current sourceDUTTA, A. K.Microelectronics journal. 1998, Vol 29, Num 3, pp 67-70, issn 0959-8324Article
A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent Y-parametersCUOCO, V; NEO, W. C. E; DE VREEDE, L. C. N et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 148-151, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper
Total Ionizing Dose Effects on the IGBT Performance for a DC-DC ConverterYOUNG HWAN LHO; SANG YONG LEE; KANG, Phil-Hyun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6794, pp 679438.1-679438.6, issn 0277-786X, isbn 978-0-8194-6959-5, 2Vol, 2Conference Paper
Efficient Thermal-Impedance Simulation of Insulated-Gate Bipolar Transistors Modules on Heat SinksGRADINGER, Thomas B; DROFENIK, Uwe.Journal of thermal science and engineering applications (Print). 2013, Vol 5, Num 4, issn 1948-5085, 041009.1-041009.11Article
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditionsBARLINI, D; CIAPPA, M; CASTELLAZZI, A et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1772-1777, issn 0026-2714, 6 p.Conference Paper
A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasiticsSULIGOJ, Tomislav; BILJANOVIC, Petar; SIN, Johnny K. O et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 36-39, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper
I-V characteristics of the lambda bipolar transistorMANJU SARKAR; SATYAM, M; PRABHAKAR, A et al.Microelectronics journal. 1995, Vol 26, Num 7, pp 647-652, issn 0959-8324Article
Implementation of optimized vertical Bipolar transistor in CMOS process technologySINGH, Upinder; DEO BRAT SINGH; ROY, J. N et al.SPIE proceedings series. 2002, pp 721-724, isbn 0-8194-4500-2, 2VolConference Paper
Classes de fonctionnement à tres haut rendement de TBHs pour les radiocommunications entre mobiles = Very high yield HBT operating classes for mobile radiocommunicationMALLET, A; FRAYSSE, J. P; CAMPOVECCHIO, M et al.Journées nationales microondes. 1997, pp 408-409, 2VolConference Paper
Snapback-free reverse-conducting IGBT with low turnoff lossBO YI; ZHI LIN; XINGBI CHEN et al.Electronics letters. 2014, Vol 50, Num 9, pp 703-705, issn 0013-5194, 3 p.Article
The optimization of relative current sensitivity of bipolar magnetotransistorKOZLOV, A. V; REVELEVA, M. A; TIKHONOV, R. D et al.SPIE proceedings series. 2004, pp 362-368, isbn 0-8194-5324-2, 7 p.Conference Paper
Translinear circuits: a proposed classificationGILBERT, B.Electronics letters. 2014, Vol 50, Num 1, pp 8-10, issn 0013-5194, 3 p.Article
Application of the Johnson criteria to graphene transistorsKELLY, M. J.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 122001.1-122001.2Article
Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance modelINGVARSON, Fredrik; LINDER, Martin; JEPPSON, Kjell O et al.2002 international conference on microelectronic test structures. 2002, pp 71-75, isbn 0-7803-7464-9, 5 p.Conference Paper
Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage referencesMATTIA, O. E; KLIMACH, H; BAMPI, S et al.Electronics letters. 2014, Vol 50, Num 12, pp 863-864, issn 0013-5194, 2 p.Article
Ensuring zero-voltage switching (ZVS) and zero-current switching (ZCS)FLORENTSEV, S. N; RUDYK, S. D; TURCHANINOV, V. E et al.Russian electrical engineering. 1997, Vol 68, Num 11, pp 65-70, issn 1068-3712Article
MOSFET-mode ultra-thin wafer PTIGBTs for soft switching application - theory and experimentsNAKAGAWA, Akio; MATSUDAI, Tomoko; MATSUDA, Tadashi et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 103-106, isbn 4-88686-060-5, 4 p.Conference Paper
Composants semi-conducteurs de puissance : caractères propres = Semiconducting power components : eigen characteristicsLETURCQ, Philippe.Techniques de l'ingénieur. Génie électrique. 1999, Vol D4, Num D3100, pp 1-15, issn 0992-5449, 15 p.Article
A novel high performance insulated gate bipolar transistorFEI ZHANG; LINA SHI; CHENGFANG LI et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1201-1205, issn 0038-1101, 5 p.Article
CMOS low-power bandwidth-improved derivative superposition mixer using parasitic NPN BJTsKEPING WANG; XUEMEI LEI.Electronics letters. 2013, Vol 49, Num 25, pp 1605-1607, issn 0013-5194, 3 p.Article
Bipolar mechanisms present in short channel SOI-MOSFET transistorsJANCZYK, G.Microelectronics and reliability. 2005, Vol 45, Num 7-8, pp 1257-1263, issn 0026-2714, 7 p.Article
600V-IGBT3: trench field stop technology in 70 μm ultra thin wafer technologyRÜTHING, H; UMBACH, F; HELLMUND, O et al.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 211-214, issn 1350-2409, 4 p.Conference Paper
Ambipolar field-effect transistor on as-grown single-wall carbon nanotubesBABIC, Bakir; IQBAL, Mahdi; SCHÖNENBERGER, Christian et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 2, pp 327-331, issn 0957-4484, 5 p.Conference Paper
Semi-conducteurs de puissance unipolaires et mixtes (partie 2) = Unipolar and mixed power semiconductors (part 2)LETURCQ, Philippe.Techniques de l'ingénieur. Génie électrique. 2002, Vol D4, Num D3109, pp 1-24, issn 0992-5449, 24 p.Article