Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article

An analytical model for Pinchoff voltage evaluation of ion-implanted GaAs MESFET'sDUTT, M. B; RAM NATH; KUMAR, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 765-768, issn 0018-9383, 4 p.Article

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devicesCANALI, C; CHIUSSI, F; DONZELLI, G et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 117-124, issn 0026-2714, 8 p.Article

Submicron-gate In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxyKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1136-1138, issn 0003-6951, 3 p.Article

Quantum simulation of nano-scale schottky barrier mosfetsSHIN, Mincheol; JANG, Moongyu; LEE, Seonjae et al.IEEE conference on nanotechnology. 2004, pp 396-398, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

A reliable method for 0.25-micron gate MESFET fabrication using optical photolithographyCANTOS, B. D; REMBA, R. D.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1311-1312, issn 0013-4651Article

Thermal effects in p-channel MOSFET's at low temperaturesFOTY, D.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1542-1544, issn 0018-9383, 3 p.Article

0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabricationGOUY, J. P; VILCOT, J. P; LORRIAUX, J. L et al.Thin solid films. 1989, Vol 172, Num 1, pp L59-L63, issn 0040-6090Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Quantum approach to GaAs MESFETsSALIC, R; RAMOVIC, R; TJAPKIN, D et al.International conference on microelectronic. 1997, pp 365-368, isbn 0-7803-3664-X, 2VolConference Paper

Application of superlattice gate and modulation-doped buffer for GaAs power MESFET grown by MBELIU, W. C; LOUR, W. S; CHANG, C. Y et al.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 3, pp 321-324, issn 0721-7250, 4 p.Article

Pulse reponse characteristics for GaAs MESFET distributed amplifiersHEIDMANN, P; BEYER, J. B; SOKOLOV, V et al.Proceedings of the IEEE. 1987, Vol 75, Num 7, pp 956-957, issn 0018-9219Article

Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article

Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article

Impact of the material properties on the coupling thermal and electrical analysis of semiconductor devicesMARUYAMA, Hirohisa; FUSHINOBU, Kazuyoshi; OKAZAKI, Ken et al.International heat transfer conference. 2002, pp 441-446, isbn 2-84299-308-X, 6 p.Conference Paper

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Automated data collection and analysis system for MOSFET radiation detectorsGLADSTONE, D. J; CHIN, L. M.Medical physics (Lancaster). 1991, Vol 18, Num 3, pp 542-548, issn 0094-2405Article

Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors : technology and performancePACCAGNELLA, A; WANG, L. C; CANALI, C et al.Thin solid films. 1990, Vol 187, Num 1, pp 9-18, issn 0040-6090Article

A selective dry-etch technique for GaAs MESFET gate recessingCHANG, E. Y; VAN HOVE, J. M; PANDE, K. P et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1580-1584, issn 0018-9383Article

Analysis of capacitance and transconductance frequency dispersions in MESFETS for surface characterizationGRAFFEUIL, J; HADJOUB, Z; FORTEA, J. P et al.Solid-state electronics. 1986, Vol 29, Num 10, pp 1087-1097, issn 0038-1101Article

Enhancement mode MESFET under optically controlled conditionBANDHAWAKAR, Garima; PAL, B. B.SPIE proceedings series. 2002, pp 182-186, isbn 0-8194-4500-2, 2VolConference Paper

Improved large-signal quasistatic MESFET modelKRAMER, B. A; WEBER, R. J.Electronics Letters. 1991, Vol 27, Num 11, pp 906-908, issn 0013-5194Article

Quantum mechanical simulation of charge transport in very small semiconductor structuresYALABIK, M. C; NEOFOTISTOS, G; DIFF, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1009-1014, issn 0018-9383, 6 p.Article

GaAs substrate materiel assessment using a high lateral resolution MESFET test patternSCHINK, H; PACKEISER, G; MALUENDA, J et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L369-L372, issn 0021-4922, part 2Article

On the photoresponsitivity of GaAs MESFETsPAPAIOANNOU, G. J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K99-K102, issn 0031-8965Article