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Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article

An analytical model for Pinchoff voltage evaluation of ion-implanted GaAs MESFET'sDUTT, M. B; RAM NATH; KUMAR, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 765-768, issn 0018-9383, 4 p.Article

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devicesCANALI, C; CHIUSSI, F; DONZELLI, G et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 117-124, issn 0026-2714, 8 p.Article

Submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxyKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1136-1138, issn 0003-6951, 3 p.Article

Heavy doping for improved short-channel operation of GaAs MESFETMOHAMMAD, S; PATIL, M. B; MORKOC, H et al.Electronics Letters. 1989, Vol 25, Num 5, pp 331-332, issn 0013-5194, 2 p.Article

Modeling deep-level trap effects in GaAs MESFET'sSON, I; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 632-640, issn 0018-9383, 9 p.Article

A novel cap-annealing technique using a WNx film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication processNOGAMI, T; NAGAOKA, M; IIDA, N et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1989-1991, issn 0018-9383Article

Computer simulation of a new MESFET with an atomic-layer-doped structureYAMAGUCHI, K; SHIRAKI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1909-1914, issn 0018-9383, 1Article

Low frequency and microwave characterization of submicron-gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal-semiconductor field-effect transistors growth by molecular-beam epitaxyKUANG, J. B; TASKER, P. J; RATANAPHANYARAT, S et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 6168-6174, issn 0021-8979, 7 p.Article

Drain avalanche breakdown in gallium arsenide MESFET'sWADA, Y; TOMIZAWA, M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1765-1770, issn 0018-9383, 1Article

Sub-band structure of a Lorentzian-doped MESFET device in the presence of a homogeneous backgroundROOS, G.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 865-872, issn 0268-1242Article

Quantum simulation of nano-scale schottky barrier mosfetsSHIN, Mincheol; JANG, Moongyu; LEE, Seonjae et al.IEEE conference on nanotechnology. 2004, pp 396-398, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

A reliable method for 0.25-micron gate MESFET fabrication using optical photolithographyCANTOS, B. D; REMBA, R. D.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1311-1312, issn 0013-4651Article

Thermal effects in p-channel MOSFET's at low temperaturesFOTY, D.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1542-1544, issn 0018-9383, 3 p.Article

0.8 μm wavelength integrated photoreceiver: improvement using a special hetero-epitaxy suitable for high electron mobility transistor fabricationGOUY, J. P; VILCOT, J. P; LORRIAUX, J. L et al.Thin solid films. 1989, Vol 172, Num 1, pp L59-L63, issn 0040-6090Article

Numerical simulation of GaAs MESFETS including velocity overshootSTENZEL, R; ELSCHNER, H; SPALLEK, R et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 873-877, issn 0038-1101Article

Quantum approach to GaAs MESFETsSALIC, R; RAMOVIC, R; TJAPKIN, D et al.International conference on microelectronic. 1997, pp 365-368, isbn 0-7803-3664-X, 2VolConference Paper

Application of superlattice gate and modulation-doped buffer for GaAs power MESFET grown by MBELIU, W. C; LOUR, W. S; CHANG, C. Y et al.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 3, pp 321-324, issn 0721-7250, 4 p.Article

Pulse reponse characteristics for GaAs MESFET distributed amplifiersHEIDMANN, P; BEYER, J. B; SOKOLOV, V et al.Proceedings of the IEEE. 1987, Vol 75, Num 7, pp 956-957, issn 0018-9219Article

Optically controlled characteristics in an ion-implanted silicon MESFETSINGH, V. K; CHATTOPADHYAY, S. N; PAL, B. B et al.Solid-state electronics. 1986, Vol 29, Num 7, pp 707-711, issn 0038-1101Article

Schottky-barrier field-effect transistors of 3C-SiCYOSHIDA, S; DAIMON, H; YAMANAKA, M et al.Journal of applied physics. 1986, Vol 60, Num 8, pp 2989-2991, issn 0021-8979Article

Impact of the material properties on the coupling thermal and electrical analysis of semiconductor devicesMARUYAMA, Hirohisa; FUSHINOBU, Kazuyoshi; OKAZAKI, Ken et al.International heat transfer conference. 2002, pp 441-446, isbn 2-84299-308-X, 6 p.Conference Paper

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Automated data collection and analysis system for MOSFET radiation detectorsGLADSTONE, D. J; CHIN, L. M.Medical physics (Lancaster). 1991, Vol 18, Num 3, pp 542-548, issn 0094-2405Article

Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors : technology and performancePACCAGNELLA, A; WANG, L. C; CANALI, C et al.Thin solid films. 1990, Vol 187, Num 1, pp 9-18, issn 0040-6090Article

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