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Circuit approaches to increasing IGBT switching speedBOISVERT, D. M; LIU, D. K. Y; PLUMMER, J. D et al.IEEE journal of solid-state circuits. 1988, Vol 23, Num 5, pp 1276-1279, issn 0018-9200Article

New mechanism of gate current in heterostructure insulated gate field-effect transistorsJUN HO BAEK; SHUR, M; DANIELS, R. R et al.IEEE electron device letters. 1986, Vol 7, Num 9, pp 519-521, issn 0741-3106Article

Analytical model for threshold voltage of ion-implanted short-channel IGFET'sMEHTA, S. K; MURALIDHARAN, R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1073-1074, issn 0018-9383Article

A new electron-trapping model for the gate insulator of insulated gate field-effect transistorsSUNE, C. T; REISMAN, A; WILLIAMS, C. K et al.Journal of electronic materials. 1990, Vol 19, Num 7, pp 651-655, issn 0361-5235Article

A study of X-ray damage effects on the short channel behavior of IGFET'sBHATTACHARYA, P. K; REISMAN, A.Journal of electronic materials. 1990, Vol 19, Num 7, pp 727-732, issn 0361-5235Article

The effect of fluorine in silicon dioxide gate dielectricsWRIGHT, P. J; SARASWAT, K. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 5, pp 879-889, issn 0018-9383, 11 p.Article

Safe operating area for 1200-V nonlatchup bipolar mode MOSFET'sNAKAGAWA, A; YAMAGUCHI, Y; WATANABE, K et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 351-355, issn 0018-9383Article

A lateral COMFET made in thin silicon-on-insulator filmCOLINGE, J.-P; SHANG-YI CHIANG.IEEE electron device letters. 1986, Vol 7, Num 12, pp 697-699, issn 0741-3106Article

Lateral insulated gate transistors with improved latching characteristicsROBINSON, A. L; PATTANAYAK, D. N; ADLER, M. S et al.IEEE electron device letters. 1986, Vol 7, Num 2, pp 61-63, issn 0741-3106Article

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulatorsDIMITRAKOPOULOS, C. D; PURUSHOTHAMAN, S; KYMISSIS, J et al.Science (Washington, D.C.). 1999, Vol 283, Num 5403, pp 822-824, issn 0036-8075Article

Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le système GaAs-AlAsIL'ICHEV, EH. A; POLTORATSKIJ, EH. A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 10, pp 1782-1786, issn 0015-3222Article

Numerical verification of substrate current model in silicon IGFETsFARICELLI, J; GILDENBLAT, G.Solid-state electronics. 1987, Vol 30, Num 6, pp 655-662, issn 0038-1101Article

Localized lifetime control in insulated-gate transistors by proton implantationMOGRO-CAMPERO, A; LOVE, R. P; CHANG, M. F et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1667-1671, issn 0018-9383Article

New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operationSHUR, M. S; ARCH, D. K; DANIELS, R. R et al.IEEE electron device letters. 1986, Vol 7, Num 2, pp 78-80, issn 0741-3106Article

The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistorsCHOW, T. P; BALIGA, B. J; PATTANAYAK, D. N et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 450-452, issn 0741-3106Article

Analysis of the output conductance of insulated gate transistorsBALIGA, B.J.IEEE electron device letters. 1986, Vol 7, Num 12, pp 686-688, issn 0741-3106Article

Model for the channel-implanted enhancement-mode IGFETROGERS, D. M; HAYDEN, J. D; RINERSON, D. D et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 955-964, issn 0018-9383Article

Caractérisation de l'interface isolant/Ga_xIn_1-xAs : application à la réalisation de transistors à effet de champ à grille isolée = Charaterization of the insulator Ga_xIn_1-xAs interface. Application insulated gate field effect transistor realizationTAILLEPIED, Monique.1985, 235 pThesis

Organic semiconductors in molecular electronicsJANATA, Jiri.PCCP. Physical chemistry chemical physics (Print). 2003, Vol 5, Num 23, pp 5155-5158, issn 1463-9076, 4 p.Conference Paper

Heavy ion and proton analysis of a GaAs-HIGFET SRAMCUTCHIN, J. H; MARSHALL, P. W; WEATHERFORD, T. R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1660-1665, issn 0018-9499Conference Paper

High frequency GaAs swithed capacitor filter implemented with GaAs insulated gate FET switchesLUCK, J. L; TAYLOR, J. T; SWANSON, J. G et al.Electronics Letters. 1991, Vol 27, Num 18, pp 1619-1620, issn 0013-5194Article

Measurement of source and drain series resistances of HIGFETs using a bias-scan methodSUN, C. C; XU, J. M; HAGLEY, A et al.Solid-state electronics. 1990, Vol 33, Num 10, pp 1279-1282, issn 0038-1101, 4 p.Article

Gate current and 2D electron concentration in HIGFET and SISFETDEPREEUW, D; GODTS, P; CONSTANT, E et al.Electronics Letters. 1988, Vol 24, Num 15, pp 944-945, issn 0013-5194Article