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Gate-length dependence of the low-frequency noise overshoot in partially depleted SOI n-MOSFET'sSIMOEN, E; CLAEYS, C.Solid state communications. 1993, Vol 88, Num 7, pp 507-508, issn 0038-1098Article

Collapse of the quantum Hall state by floating-up of extended-state bands with increasing disorderOKAMOTO, T; SHINOHARA, Y; KAWAJI, S et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 278-281, issn 0039-6028Conference Paper

On-chip p-MOSFET dosimetryBUEHLER, M. G; BLAES, B. R; SOLI, G. A et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1442-1449, issn 0018-9499Conference Paper

Evidence of a long-range density gradient in SiO₂ films on Si from H₂-permeability measurementsMRSTIK, B. J; MCMARR, P. J.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17972-17985, issn 0163-1829Article

High mobility metal-oxide-semiconductor transistor with high temperature annealed thick polycrystalline-silicon filmsSAKAKIBARA, N; FUJINO, S; MURAMOTO et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2590-2592, issn 0021-8979Article

Electron localization and noise in silicon carbide inversion layersOUISSE, T.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1996, Vol 73, Num 2, pp 325-337, issn 1364-2812Article

Wigner solid in two-dimensional electron system in silicon in the extreme quantum limit ?DOLGOPOLOV, V. T; KRAVCHENKO, G. V; KRAVCHENKO, S. V et al.Surface science. 1994, Vol 305, Num 1-3, pp 96-100, issn 0039-6028Conference Paper

Floating up of the extended states of Landau levels in a two-dimensional electron gas in silicon MOSFET'sSHASHKIN, A. A; KRAVCHENKO, G. V; DOLGOPOLOV, V. T et al.JETP letters. 1993, Vol 58, Num 3, pp 220-224, issn 0021-3640Article

Use of the charge pumping technique to understand non-uniform n-channel MOSFET degradationDJAHLI, F; AUTRAN, J. L; PLOSSU, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 23, Num 2, pp 120-122, issn 0921-5107Article

Collective insulating state at zero magnetic field in a dilute 2D electron systemD'IORIO, M; PUDALOV, V. M; KRAVCHENKO, S. V et al.Surface science. 1994, Vol 305, Num 1-3, pp 115-119, issn 0039-6028Conference Paper

Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 KZUPAC, D; GALLOWAY, K. F; SCHRIMPF, R. D et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2910-2915, issn 0021-8979Article

Electric field induced non-ohmic conduction in the 2D insulating phasePUDALOV, V. M; D'IORIO, M; CAMPBELL, J. W et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 941-944, issn 0039-6028Conference Paper

Les microcapteurs chimiques = Chemical microsensorsJAFFREZIC-RENAULT, N.Spectra 2000 analyse. 1997, Vol 26, Num 195, pp 26-30, issn 1255-2909Article

Application of BaF₂-B₂O₃-GeO₂-SiO₂ glasses to metal-oxide-silicon field-effect transistorsKOBAYASHI, K.Applied physics. A, Materials science & processing (Print). 1995, Vol 61, Num 4, pp 377-380, issn 0947-8396Article

Characterization of abrasively processed surface of Si(100) waferOGASAWARA, T; TSUCHIDA, M; YAGI, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 5A, pp 2284-2285, issn 0021-4922, 1Article

Degradation and recovery in electron-irradiated MOSFETs and operational amplifiersOHYAMA, H; HAYAMA, K.Physica status solidi. A. Applied research. 1995, Vol 151, Num 2, pp 489-499, issn 0031-8965Article

A fully suspended, movable, single-crystal silicon, deep submicron MOSFET for nanoelectromechanical applicationsYAO, J. J; ARNEY, S. C; MACDONALD, N. C et al.Sensors and actuators. A, Physical. 1994, Vol 40, Num 1, pp 77-84, issn 0924-4247Article

Ge⁺ ion implantation : a competing technology ?HEMMENT, P. L. F; CRISTIANO, F; NEJIM, A et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 147-160, issn 0022-0248Conference Paper

Discussions et mises en œuvre des méthodes de caractérisation des défauts de semiconducteurs. Applications à la détermination de la densité d'états du silicium polycristallin = Methods of analyzing the characteristic defects in semiconductors. Application to the determination of state density distribution of polycrystalline siliconMenkassi, Abdellatif; Le Bloa, Auguste.1993, 236 p.Thesis

Tetrahedral amorphous carbon properties and applicationsMCKENZIE, D. R; YIN, Y; MARKS, N. A et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1101-1106, issn 0022-3093, 2Conference Paper

Possible ring-exchange interaction and Aharonov-Bohm effect in two-dimensional electron solidsOKAMOTO, T; KAWAJI, S.Journal of the Physical Society of Japan. 1996, Vol 65, Num 12, pp 3716-3719, issn 0031-9015Article

Temperature-induced transitions between insulator, metal, and quantum Hall states in a two-dimensional electron systemKRAVCHENKO, S. V; MASON, W; FURNEAUX, J. E et al.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 5, pp L41-L48, issn 0953-8984Article

Relaxation processes induced in Si-SiOi2 systems by ionizing radiation and pulsed magnetic field treatingLEVIN, M. N; MASLOVSKY, V. M.Solid state communications. 1994, Vol 90, Num 12, pp 813-815, issn 0038-1098Article

Termination of the quantized Hall effect by the electron solidPUDALOV, V. M; D'IORIO, M; CAMPBELL, J. W et al.Surface science. 1994, Vol 305, Num 1-3, pp 107-114, issn 0039-6028Conference Paper