Monolithic integration of surge protection diodes into low-noise GaAs MESFET'sHAGIO, M; KANAZAWA, K; NAMBU, S et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 892-895, issn 0018-9383Article

Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET'sTREW, R. J; ALI KHATIBZADEH, M; MASNARI, N. A et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 5, pp 877-882, issn 0018-9383Article

Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic processCAMIN, D. V; PESSINA, G; PREVITALI, E et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 759-763, issn 0018-9499Conference Paper

Bias dependence of low-frequency gate current noise in GaAs MESFETsPERANSIN, J. M; VIGNAUD, P; RIGAUD, D et al.Electronics Letters. 1989, Vol 25, Num 7, pp 439-440, issn 0013-5194, 2 p.Article

No blister formation Pd/Pt double metal gate Misfet hydrogen sensorsCHOI, S.-Y; TAKAHASHI, K; MATSUO, T et al.IEEE electron device letters. 1984, Vol 5, Num 1, pp 14-15, issn 0741-3106Article

An analytical model for Pinchoff voltage evaluation of ion-implanted GaAs MESFET'sDUTT, M. B; RAM NATH; KUMAR, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 765-768, issn 0018-9383, 4 p.Article

Correlation between thermal resistance, channel temperature, infrared thermal maps and failure mechanisms in low power MESFET devicesCANALI, C; CHIUSSI, F; DONZELLI, G et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 117-124, issn 0026-2714, 8 p.Article

Submicron-gate In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunction metal-semiconductor field-effect transistors grown by molecular beam epitaxyKUANG, J. B; TASKER, P. J; CHEN, Y. K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1136-1138, issn 0003-6951, 3 p.Article

Active matching with common-gate MESFET'sNICLAS, K. B.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 6, pp 492-499, issn 0018-9480Article

Determination of the active-layer temperature near the channel of GaAs MESFET'SBOURDONNAIS, L; BEROLO, O; FORTIN, E et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1141-1147, issn 0038-1101Article

High frequency divider circuits using ion-implanted Gaas MESFET'sANDRADE, T; ANDERSON, J. R.IEEE electron device letters. 1985, Vol 6, Num 2, pp 83-85, issn 0741-3106Article

Experimental microwave-signal-propagation study on GaAs MESFET's using especially fabricated transistor structuresFRICKE, K; HARTNAGEL, H. L.IEEE electron device letters. 1985, Vol 6, Num 3, pp 151-153, issn 0741-3106Article

The effects of substrate gettering in GaAs MESFET performanceFAA-CHING WANG; BUJATTI, M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2839-2843, issn 0018-9383Article

Quantum simulation of nano-scale schottky barrier mosfetsSHIN, Mincheol; JANG, Moongyu; LEE, Seonjae et al.IEEE conference on nanotechnology. 2004, pp 396-398, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Coupled transmission line analysis for harmonic generation in travelling-wave MESFETSTIWARI, D. C; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 687-692, issn 0020-7217Article

Experimental study of MESFET travelling-wave structuresFRICKE, K; HARTNAGEL, H. L.International journal of electronics. 1985, Vol 8, Num 4, pp 629-638, issn 0020-7217Article

Thermal effects in p-channel MOSFET's at low temperaturesFOTY, D.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1542-1544, issn 0018-9383, 3 p.Article

A reliable method for 0.25-micron gate MESFET fabrication using optical photolithographyCANTOS, B. D; REMBA, R. D.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1311-1312, issn 0013-4651Article

Coupled-mode analysis of travelling-wave MESFETSKRETSCHMER, K.-H; GRAMBOW, P; SIGULLA, T et al.International journal of electronics. 1985, Vol 8, Num 4, pp 639-648, issn 0020-7217Article

Examination of millimetre-wave frequency-gain behaviour of GaAs MESFETsKROWNE, C. M; NEIDERT, R. E.International journal of electronics. 1985, Vol 58, Num 3, pp 407-412, issn 0020-7217Article

FET characterization using gated-TLM structureBAIER, S. M; SHUR, M. S; LEE, K et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2824-2829, issn 0018-9383Article

Monte-Carlo particle model study of the influence of gate metallisation and gate geometry on the AC characteristics of GaAs MESFETsMOGLESTUE, C.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 6, pp 193-202, issn 0143-7100Article

A gallium arsenide configurable cell array using buffered FET logicDEMING, R. N; ZUCCA, R; VAHRENKAMP, R. P et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 5, pp 728-738, issn 0018-9200Article

Low-resistance submicrometre gates used for self alignmentISMAIL, K; BENEKING, H.Electronics Letters. 1984, Vol 20, Num 22, pp 942-943, issn 0013-5194Article

A power amplifier based on an extended resonance techniqueMARTIN, A; MORTAZAWI, A; DE LOACH, B. C et al.IEEE microwave and guided wave letters. 1995, Vol 5, Num 10, pp 329-331, issn 1051-8207Article