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Characteristics of InxAl1-xAs/InxGa1-xAs (x= 50%, 60%) metamorphic HEMTs on GaAs substratesLIN, Cheng-Kuo; WU, Jing-Chang; WANG, Wen-Kai et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 205-208, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

50 nm In0.8GaP /In0.4AlAs /In0.35GaAs metamorphic HEMTs with ZEP/UV5 bilayer T-gateKIM, S; KOH, Y; SEO, K et al.Electronics Letters. 2007, Vol 43, Num 16, pp 895-897, issn 0013-5194, 3 p.Article

Design and fabrication of 94 GHz MMIC single balanced resistive mixer without IF balunLEE, Sang-Jin; BAEK, Yong-Hyun; BAEK, Tae-Jong et al.Microelectronics journal. 2010, Vol 41, Num 10, pp 627-631, issn 0959-8324, 5 p.Article

Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologiesTHAYNE, Iain; XIN CAO; MORAN, David et al.IEEE conference on nanotechnology. 2004, pp 95-97, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm gm and 490 GHz fTHA, Wonill; SHINOHARA, K; BRAR, B et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 419-421, issn 0741-3106, 3 p.Article

High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperaturesONO, Hideki; TANIGUCHI, Satoshi; SUZUKI, Toshi-Kazu et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 288-291, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Monolithic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applicationsJANG, J. H; CUEVA, G; SANKARALINGAM, R et al.Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium. 2002, pp 55-58, issn 1064-7775, isbn 0-7803-7447-9, 4 p.Conference Paper

Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistorCHEN, L.-Y; CHENG, S.-Y; CHU, K.-Y et al.Electronics Letters. 2008, Vol 44, Num 12, pp 771-773, issn 0013-5194, 3 p.Article

Approach for determination of extrinsic resistance for equivalent circuit model of metamorphic InP/InGaAs HBTsGAO, J; LI, X; WANG, H et al.IEE proceedings. Microwaves, antennas and propagation. 2005, Vol 152, Num 3, pp 195-200, issn 1350-2417, 6 p.Article

pHEMT and mHEMT ultra wideband millimeterwave balanced resistive mixersGUNNARSSON, Sten; YHLAND, Klas; ZHATHL, Herbert et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 1141-1144Conference Paper

DC―35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applicationsHWANG, C.-J; CHONG, H. M. H; HOLLAND, M et al.Electronics letters. 2009, Vol 45, Num 12, pp 632-634, issn 0013-5194, 3 p.Article

The Matrix Balun : A Transistor-Based Module for Broadband ApplicationsFERNDAHL, Mattias; VICKES, Hans-Olof.IEEE transactions on microwave theory and techniques. 2009, Vol 57, Num 1, pp 53-60, issn 0018-9480, 8 p.Article

Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics : Fundamentals and applications of advanced semiconductor devicesSEOK GYU CHOI; YOUNG HYUN BAEK; JUNG HUN OH et al.IEICE transactions on electronics. 2008, Vol 91, Num 5, pp 683-687, issn 0916-8524, 5 p.Article

A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT TechnologyCAMPOS-ROCA, Yolanda; SCHWÖRER, Christoph; LEUTHER, Arnulf et al.IEEE microwave and wireless components letters. 2005, Vol 15, Num 7, pp 466-468, issn 1531-1309, 3 p.Article

High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layersWU, Yi-Chen; TSAI, Jung-Hui; CHIANG, Te-Kuang et al.Solid-state electronics. 2014, Vol 92, pp 52-56, issn 0038-1101, 5 p.Article

A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTsKIM, Youngmin; KOH, Yumin; KIM, Jihoon et al.IEEE microwave and wireless components letters. 2011, Vol 21, Num 6, pp 323-325, issn 1531-1309, 3 p.Article

MMIC LNAs for Radioastronomy Applications Using Advanced Industrial 70 nm Metamorphic TechnologyCICCOGNANI, Walter; LIMITI, Ernesto; LONGHI, Patrick E et al.IEEE journal of solid-state circuits. 2010, Vol 45, Num 10, pp 2008-2015, issn 0018-9200, 8 p.Conference Paper

50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown VoltagesDONG XU; KONG, Wendell M. T; XIAOPING YANG et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 793-795, issn 0741-3106, 3 p.Article

A 210 GHz Dual-Gate FET Mixer MMIC With >2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive RequirementsKALLFASS, I; MASSLER, H; LEUTHER, A et al.IEEE microwave and wireless components letters. 2008, Vol 18, Num 8, pp 557-559, issn 1531-1309, 3 p.Article

60 GHz single-chip front-end MMICs and systems for multi-gb/s wireless communicationGUNNARSSON, Sten E; KÄRNFELT, Camilla; ZIRATH, Herbert et al.IEEE journal of solid-state circuits. 2007, Vol 42, Num 5, pp 1143-1157, issn 0018-9200, 15 p.Article

Low conversion loss and high LO-RF isolation 94-GHz active down converterLEE, Bok-Hyung; DAN AN; LEE, Mun-Kyo et al.IEEE transactions on microwave theory and techniques. 2006, Vol 54, Num 6, pp 2422-2430, issn 0018-9480, 9 p., 1Article

Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)CHEN, Chun-Wei; LAI, Po-Hsien; LOUR, Wen-Shiung et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1358-1363, issn 0268-1242, 6 p.Article

BCB-bridged distributed wideband spst switch using 0.25-μm In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTsLIN, Cheng-Kuo; WANG, Wen-Kai; CHAN, Yi-Jen et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 1, pp 1-5, issn 0018-9383, 5 p.Article

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixersAN, Dan; LEE, Bok-Hyung; LIM, Byeong-Ok et al.IEEE electron device letters. 2005, Vol 26, Num 10, pp 707-709, issn 0741-3106, 3 p.Article

Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technologyLEE, Bok-Hyung; AN, Dan; LEE, Mun-Kyo et al.IEEE electron device letters. 2004, Vol 25, Num 12, pp 766-768, issn 0741-3106, 3 p.Article

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