Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Transistor mobilité électron élevée")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 3790

  • Page / 152
Export

Selection :

  • and

Parasitic source and drain resistance in high-electron-mobility transistorsLEE, S. J; CROWELL, C. R.Solid-state electronics. 1985, Vol 28, Num 7, pp 659-668, issn 0038-1101Article

The HEMT: a superfast transistor ― An experimetnal gaAs-AlGaAs device switches in picoseconds and generates little heat ― This is just what supercomputers needMORKOC, H; SOLOMON, P. M.IEEE spectrum. 1984, Vol 21, Num 2, pp 28-35, issn 0018-9235Article

Under 0.5W 50Gb/s full-rate 4:1MUX and 1:4 DEMUX in 0.13μm InP HEMT technologySUZUKI, Toshihide; TAKAHASHI, Tsuyoshi; MAKIYAMA, Kozo et al.IEEE International Solid-State Circuits Conference. 2004, pp 234-235, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTsCHINI, A; BUTTARI, D; COFFIE, R et al.DRC : Device research conference. 2004, pp 33-34, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Super low-noise HEMTs with a T-shaped WSix gateHANYU, I; ASAI, S; NUNOKAWA, M et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1327-1328, issn 0013-5194Article

High-frequency admittance of high-electron-mobility transistors (HEMTs)VAN DER ZIEL, A; WU, E. N.Solid-state electronics. 1983, Vol 26, Num 8, pp 753-754, issn 0038-1101Article

A new two-step recess technology using SiNx passivation and pt-buried gate process and its application to 0.15μm Al0.6InAs/In0.65GaAs HEMTsKIM, Dae-Hyun; LEE, Kang-Min; LEE, Jae-Hak et al.DRC : Device research conference. 2004, pp 69-70, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD wafersTAKANASHI, Y; KOBAYASHI, N.IEEE electron device letters. 1985, Vol 6, Num 3, pp 154-156, issn 0741-3106Article

Room-temperature electron trapping in Al0.35Ga0.65As/GaAs modulation-doped field-effect transistorsNATHAN, M. I; MOONEY, P. M; SOLOMON, P. M et al.Applied physics letters. 1985, Vol 47, Num 6, pp 628-630, issn 0003-6951Article

Determination of carrier saturation velocity in short-gate lenght modulation-doped FET'SDAS, M. B; KOPP, W; MORKOC, H et al.IEEE electron device letters. 1984, Vol 5, Num 11, pp 446-449, issn 0741-3106Article

Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTsMATULIONIS, A.DRC : Device research conference. 2004, pp 145-146, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Strained-quantum-well, modulation-doped, field-effect transistorZIPPERIAN, T. E; DRUMMOND, T. J.Electronics Letters. 1985, Vol 21, Num 18, pp 823-824, issn 0013-5194Article

dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistorsPALMATEER, L. F; TASKER, P. J; SCHAFF, W. J et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2139-2141, issn 0003-6951, 3 p.Article

High electron mobility transistorsMIMURA, T; ABE, M; KOBAYASHI, M et al.Fujitsu scientific and technical journal. 1985, Vol 21, Num 3, pp 370-379, issn 0016-2523Article

Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivationSHEN, L; BUTTARI, D; HEIKMAN, S et al.DRC : Device research conference. 2004, pp 39-40, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

DC and microwave characteristics of sub-0.1-μm gate-length planar-doped pseudomorphic HEMT'sPANE-CHANE CHAO; SHUR, M. S; TIBERIO, R. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 461-473, issn 0018-9383, 13 p.Article

Theoretical analysis of an Al0.15Ga0.85As/In0.15Ga0.85As pseudomorphic HEMT using an ensemble Monte Carlo simulationPARK, D. H; BRENNAN, K. F.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1254-1263, issn 0018-9383, 10 p.Article

New transverse-domain formation mechanism in a quarter-micrometre-gate HEMTAWANO, Y.Electronics Letters. 1988, Vol 24, Num 21, pp 1315-1317, issn 0013-5194Article

High performance inverted and large current double interface modulation-doped field-effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interfaceARNOLD, D; HENDERSON, T; KLEM, J et al.Applied physics letters. 1984, Vol 45, Num 8, pp 902-904, issn 0003-6951Article

Saturation in the transfer characteristics of (Al, Ga)As/GaAs modulation-doped field-effect transistors at 77 KMASSELINK, W. T; DRUMMOND, T. J; KLEM, J et al.Applied physics letters. 1984, Vol 45, Num 11, pp 1190-1192, issn 0003-6951Article

Analysis of high electron mobility transistors based on a two-dimensional numerical modelYOSHIDA, J; KURATA, M.IEEE electron device letters. 1984, Vol 5, Num 12, pp 508-510, issn 0741-3106Article

A study of output power stability of GaN HEMTs on sic substratesBOUTROS, K. S; ROWELL, P; BRAR, B et al.IEEE international reliability physics symposium. 2004, pp 577-578, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

A new model for modulation-doped FET'sCIL, C. Z; TANSAL, S.IEEE electron device letters. 1985, Vol 6, Num 8, pp 434-436, issn 0741-3106Article

Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTsPALACIOS, T; RAJAN, S; SHEN, L et al.DRC : Device research conference. 2004, pp 75-76, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A new technique for characterization of the «end» resistance in modulation-doped FET'sLEE, K; SHUR, M. S; VALOIS, A. J et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1394-1398, issn 0018-9383Article

  • Page / 152