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Under 0.5W 50Gb/s full-rate 4:1MUX and 1:4 DEMUX in 0.13μm InP HEMT technologySUZUKI, Toshihide; TAKAHASHI, Tsuyoshi; MAKIYAMA, Kozo et al.IEEE International Solid-State Circuits Conference. 2004, pp 234-235, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A new two-step recess technology using SiNx passivation and pt-buried gate process and its application to 0.15μm Al0.6InAs/In0.65GaAs HEMTsKIM, Dae-Hyun; LEE, Kang-Min; LEE, Jae-Hak et al.DRC : Device research conference. 2004, pp 69-70, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTsCHINI, A; BUTTARI, D; COFFIE, R et al.DRC : Device research conference. 2004, pp 33-34, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Super low-noise HEMTs with a T-shaped WSix gateHANYU, I; ASAI, S; NUNOKAWA, M et al.Electronics Letters. 1988, Vol 24, Num 21, pp 1327-1328, issn 0013-5194Article

Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTsMATULIONIS, A.DRC : Device research conference. 2004, pp 145-146, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistorsPALMATEER, L. F; TASKER, P. J; SCHAFF, W. J et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2139-2141, issn 0003-6951, 3 p.Article

Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivationSHEN, L; BUTTARI, D; HEIKMAN, S et al.DRC : Device research conference. 2004, pp 39-40, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

DC and microwave characteristics of sub-0.1-μm gate-length planar-doped pseudomorphic HEMT'sPANE-CHANE CHAO; SHUR, M. S; TIBERIO, R. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 461-473, issn 0018-9383, 13 p.Article

Theoretical analysis of an Al0.15Ga0.85As/In0.15Ga0.85As pseudomorphic HEMT using an ensemble Monte Carlo simulationPARK, D. H; BRENNAN, K. F.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1254-1263, issn 0018-9383, 10 p.Article

New transverse-domain formation mechanism in a quarter-micrometre-gate HEMTAWANO, Y.Electronics Letters. 1988, Vol 24, Num 21, pp 1315-1317, issn 0013-5194Article

A study of output power stability of GaN HEMTs on sic substratesBOUTROS, K. S; ROWELL, P; BRAR, B et al.IEEE international reliability physics symposium. 2004, pp 577-578, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Linearity performance of GaN HEMTs with field platesWU, Y.-F; SAXLER, A; WISLEDER, T et al.DRC : Device research conference. 2004, pp 35-36, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contactsIKOSSI-ANASTASIOU, K; EZIS, A; RAI, A. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1786-1792, issn 0018-9383, 1Article

Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTsPALACIOS, T; RAJAN, S; SHEN, L et al.DRC : Device research conference. 2004, pp 75-76, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTsSANABRIA, Christopher; HONGTAO XU; PALACIOS, Tomas et al.DRC : Device research conference. 2004, pp 43-44, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Frequency performance enhancement of AlGaN/GaN HEMTs on diamondDIDUCK, Q; FELBINGER, J; EASTMAN, L. F et al.Electronics letters. 2009, Vol 45, Num 14, pp 758-759, issn 0013-5194, 2 p.Article

Use of multichannel heterostructures to improve the access resistance and fT linearity in GaN-based HEMTsPALACIOS, T; CHINI, A; BUTTARI, D et al.DRC : Device research conference. 2004, pp 41-42, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A new field-plated gan hemt structure with improved power and noise performanceHONGTAO XU; SANABRIA, Christopher; CHINI, Alessandro et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 186-191, isbn 981-256-196-X, 1Vol, 6 p.Conference Paper

Improvement in norm-reducing Newton methods for circuit simulationYEAGER, H. R; DUTTON, R. W.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 5, pp 538-546, issn 0278-0070, 9 p.Article

100-Gbit/s logic IC using 0.1-μm-gate-length InAlAs/InGaAs/InP HEMTsMURATA, Koichi; SANO, Kimikazu; KITABAYASHI, Hiroto et al.IEDm : international electron devices meeting. 2002, pp 937-939, isbn 0-7803-7462-2, 3 p.Conference Paper

Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1-xAs single quantum well and GaAs-InxGa1-xAs (0.25 < x < 0.4) thin strained superlattice active layersBALLINGALL, J. M; PIN HO; MARTIN, P. A et al.Journal of electronic materials. 1990, Vol 19, Num 6, pp 509-513, issn 0361-5235Article

Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTsDEL ALAMO, J. A; VILLANUEVA, A. A.International Electron Devices Meeting. 2004, pp 1019-1022, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Applications of MBE grown PHEMTsDILORENZO, J. V; LAUTERWASSER, B; ZAITLIN, M. P et al.Journal of crystal growth. 1997, Vol 175-76, pp 1-7, issn 0022-0248, 1Conference Paper

Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparatorFENG, S; SEITZER, D.Electronics Letters. 1992, Vol 28, Num 3, pp 233-235, issn 0013-5194Article

32-GHZ cryogenically cooled HEMT low-noise amplifiersDUH, K. H. G; KOPP, W. F; HO, P et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1528-1535, issn 0018-9383, 8 p.Article

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