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Thermal, electrical and environmental reliability of InP HEMTs and GaAs PHEMTsDEL ALAMO, J. A; VILLANUEVA, A. A.International Electron Devices Meeting. 2004, pp 1019-1022, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Bias dependence of 0.25μm pHEMT parasitic elements as determined with a direct extraction methodCAMPBELL, Charles F.Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium. 2002, pp 237-240, issn 1064-7775, isbn 0-7803-7447-9, 4 p.Conference Paper

Three-terminal-controlled resistor-type hydrogen sensorHUNG, C.-W; LIN, H.-L; TSAI, Y.-Y et al.Electronics Letters. 2006, Vol 42, Num 10, pp 578-580, issn 0013-5194, 3 p.Article

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential methodJEON, Jooyoung; KWON, Youngwoo; MIN, Hong-Shick et al.IEEE microwave and wireless components letters. 2002, Vol 12, Num 9, pp 342-344, issn 1531-1309Article

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditionsHISAKA, Takayuki; SASAKI, Hajime; NOGAMI, Yoichi et al.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1515-1519, issn 0026-2714, 5 p.Article

A W-band subharmonically pumped monolithic GaAs-based HEMT gate mixerHWANG, Yuh-Jing; HUEI WANG; CHU, Tah-Hsiung et al.IEEE microwave and wireless components letters. 2004, Vol 14, Num 7, pp 313-315, issn 1531-1309, 3 p.Article

Novel T/R switch architectures for MIMO applicationsLEE, Chang-Ho; BANERJEE, Bhaskar; LASKAR, Joy et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 1137-1140Conference Paper

A retrodirective array using unbiased subharmonic resistive mixersDE DIEGO, A; GARCIA, J. A; MEDIAVILLA, A et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 1249-1252Conference Paper

X-band successive detection Log Amplifier/Limiter MMIC implemented in 0.15 um double recess PHEMTKOMIAK, J. J; KONG, W; NICHOLS, K et al.Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium. 2002, pp 193-196, issn 1064-7775, isbn 0-7803-7447-9, 4 p.Conference Paper

Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etchLI, X; ELGAID, K; MCLELLAND, H et al.Microelectronic engineering. 2001, Vol 57-58, pp 633-640, issn 0167-9317Conference Paper

Characteristics of 0.2 μm depletion and quasi-enhancement mode self-aligned gate capless p-HEMTsKIM, T.-W; KIM, D.-H; SHIN, S.-H et al.Electronics Letters. 2006, Vol 42, Num 20, pp 1178-1180, issn 0013-5194, 3 p.Article

X-band SPDT switch MMIC based on directional coupler keyMOKEROV, V. G; GNATYUK, D. L; LISITSKII, A. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62601B.1-62601B.9, issn 0277-786X, isbn 0-8194-6325-6, 1VolConference Paper

Recent developments in compound semiconductor microwave power transistor technologySNOWDEN, C. M.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 259-264, issn 1350-2409, 6 p.Conference Paper

40-Gb/s wide-band MMIC pHEMT modulator driver amplifiers designed with the real frequency techniqueKERHERVE, Eric; PAVAO MOREIRA, Cristian; JARRY, Pierre et al.IEEE transactions on microwave theory and techniques. 2005, Vol 53, Num 6, pp 2145-2152, issn 0018-9480, 8 p., 2Conference Paper

High performance 50nm T-gate In0.52Al0.48As/In0.70Ga0.30As pseudomorphic high electron mobility transistorsXIN CAO; THOMS, Stephen; MCLELLAND, Helen et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 292-294, isbn 0-7803-8595-0, 1Vol, 3 p.Conference Paper

Low-frequency transconductance dispersion characteristics of 0.13μm In0.65GaAs p-HEMTs with side-recessed InAlAs and InP surfaceKIM, Tae-Woo; KIM, Dae-Hyun; RANG, In-Ho et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 370-373, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

A 50-nm gate length InP pseudomorphic hemt implemented in an MMIC broadband feedback amplifierMALMKVIST, Mikael; MELLBERG, Anders; GRAHN, Jan et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 386-388, isbn 0-7803-8595-0, 1Vol, 3 p.Conference Paper

The efficiency of class-F and inverse class-F amplifiersINOUE, Akira; OHTA, Akira; GOTO, Seiki et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol3, 1947-1950Conference Paper

Intrinsic reliability of a 12 V field plate pHEMTGAW, Craig; ARNOLD, Thomas; MOORE, Karen et al.Microelectronics and reliability. 2008, Vol 48, Num 7, pp 974-984, issn 0026-2714, 11 p.Conference Paper

Improved characteristics of formal-passivated pseudomorphic high electron mobility transistorLAI, P.-H; FU, S.-I; TSAI, Y.-Y et al.Electronics Letters. 2007, Vol 43, Num 1, pp 54-56, issn 0013-5194, 3 p.Article

Novel Control Architecture for JPHEMT Power Amplifiers achieving High Efficiency EDGE ApplicationALBASHA, L; CLIFTON, J. C; LAWRENSON, A et al.IEEE Radio and Wireless Conference. 2004, pp 343-346, isbn 0-7803-8451-2, 1Vol, 4 p.Conference Paper

The Temperature Dependency of a GaAs pHEMT Wideband IQ Modulator ICIHARA, Kiyoyuki.IEEE Radio and Wireless Conference. 2004, pp 223-225, isbn 0-7803-8451-2, 1Vol, 3 p.Conference Paper

Pulsed I-V for nonlinear modelingDUNLEAVY, L; CLAUSEN, W; WELLER, T et al.Microwave journal (Euro-global edition). 2003, Vol 46, Num 3, pp 68-84, issn 0192-6217, 9 p.Article

Tunnelling and impact ionization in scaled double doped PHEMTsKALNA, K; ASENOV, A.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 303-306, isbn 88-900847-8-2, 4 p.Conference Paper

Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulationSTEIGHNER, Jason B; YUAN, Jiann S.Microelectronics and reliability. 2012, Vol 52, Num 12, pp 2932-2940, issn 0026-2714, 9 p.Article

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